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Download Datasheet For Ap10n70w By Advanced Power Electronics Corp.

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AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS(ON) 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 10 A ID@TC=100 Continuous Drain Current, V GS @ 10V 6.3 A 40 A 174 W 1.39 W/ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 50 mJ 10 A EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 0.72 /W 40 /W 201022072-1/4 AP10N70W o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1.0mA 600 - - RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.0A - - 0.6 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 5 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=±30V - - ±100 nA ID=10A - 36 57 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 V Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 8.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 11.5 - nC 3 td(on) Turn-on Delay Time VDD=300V - 15 - ns tr Rise Time ID=10A - 20 - ns td(off) Turn-off Delay Time RG=10 - 52 - ns tf Fall Time RD=30 - 23 - ns Ciss Input Capacitance VGS=0V - 1950 3120 pF Coss Output Capacitance VDS=15V - 630 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Rg Gate Resistance f=1.0MHz - 2 3 Test Conditions Min. Typ. , IS=10A, VGS=0V - - 1.5 V VGS=10V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 Tj=25 3 Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 575 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10.6 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25 , IAS=10A. 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP10N70W 20 16 o T C =25 C ID , Drain Current (A) ID , Drain Current (A) 16 10V 6.0V 5.0V T C =150 o C 10V 6.0V 5.0V 12 8 4.5V 12 4.5V 8 V G = 4.0V 4 4 V G =4.0V 0 0 0 5 10 15 0 20 V DS , Drain-to-Source Voltage (V) 10 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.2 1.3 I D =5A V G =10V 2.8 Normalized RDS(ON) Normalized BVDSS (V) 1.2 1.1 1 2.4 2 1.6 0.9 1.2 0.8 0.8 -50 0 50 100 25 150 50 75 100 125 150 o o T j , Junction Temperature ( C ) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.4 10 IS (A) T j = 150 o C Normalized VGS(th) (V) 1.2 T j = 25 o C 1 1 0.8 0.6 0.4 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP10N70W f=1.0MHz 10000 I D =10A C iss V DS =320V V DS =400V V DS =480V 12 C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss 100 4 C rss 0 1 0 20 40 60 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 100us ID (A) 10 1ms 1 10ms 100ms o T c =25 C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 1S Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse DC 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A Millimeters SYMBOLS c1 D D1 b1 MIN NOM MAX A 4.50 4.80 5.10 b b1 b2 c c1 0.90 1.00 1.30 1.80 2.50 3.20 1.30 -- 2.30 0.40 0.60 0.90 1.40 -- 2.20 D 19.70 20.00 20.30 D1 14.70 15.00 15.30 E 15.30 -- 16.10 e 4.45 5.45 6.45 L 17.50 -- 20.50 3.00 3.20 3.40 L c 1.All Dimensions Are in Millimeters. b 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 10N70W YWWSSS LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence