Transcript
AP10N70W RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
100% Avalanche Test
D
Fast Switching Characteristic Simple Drive Requirement
BVDSS
600V
RDS(ON)
0.6
ID
G
10A
S
Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
G
D
S
TO-3P
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
10
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
6.3
A
40
A
174
W
1.39
W/
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation Linear Derating Factor 2
50
mJ
10
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
0.72
/W
40
/W 201022072-1/4
AP10N70W o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1.0mA
600
-
-
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.0A
-
-
0.6
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=10A
-
36
57
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C) o
IGSS
3
V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
8.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
15
-
ns
tr
Rise Time
ID=10A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10
-
52
-
ns
tf
Fall Time
RD=30
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=15V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Test Conditions
Min.
Typ.
, IS=10A, VGS=0V
-
-
1.5
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
3
Tj=25 3
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
575
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10.6
-
uC
Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25
, IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP10N70W 20
16
o
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
16
10V 6.0V 5.0V
T C =150 o C
10V 6.0V 5.0V
12
8
4.5V
12
4.5V
8
V G = 4.0V 4
4
V G =4.0V 0
0 0
5
10
15
0
20
V DS , Drain-to-Source Voltage (V)
10
20
30
40
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
1.3
I D =5A V G =10V
2.8
Normalized RDS(ON)
Normalized BVDSS (V)
1.2
1.1
1
2.4
2
1.6
0.9 1.2
0.8
0.8 -50
0
50
100
25
150
50
75
100
125
150
o
o
T j , Junction Temperature ( C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature 1.4
10
IS (A)
T j = 150 o C
Normalized VGS(th) (V)
1.2
T j = 25 o C
1
1
0.8
0.6
0.4
0.1 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4
AP10N70W f=1.0MHz 10000
I D =10A
C iss
V DS =320V V DS =400V V DS =480V
12
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss 100
4
C rss 0
1 0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
ID (A)
10
1ms 1
10ms 100ms
o
T c =25 C Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T 0.01
1S
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
DC 0.01
0.1 1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-3P E
A Millimeters
SYMBOLS
c1 D D1
b1
MIN
NOM
MAX
A
4.50
4.80
5.10
b b1 b2 c c1
0.90
1.00
1.30
1.80
2.50
3.20
1.30
--
2.30
0.40
0.60
0.90
1.40
--
2.20
D
19.70
20.00
20.30
D1
14.70
15.00
15.30
E
15.30
--
16.10
e
4.45
5.45
6.45
L
17.50
--
20.50
3.00
3.20
3.40
L c
1.All Dimensions Are in Millimeters.
b
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-3P
Part Number Package 10N70W YWWSSS
LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
