Transcript
AP18P10GS RoHS-compliant Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
D
BVDSS
-100V
RDS(ON)
Simple Drive Requirement
ID
Fast Switching Characteristic G
160m -12A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
-12
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
-10
A
1
IDM
Pulsed Drain Current
-48
A
PD@TC=25
Total Power Dissipation
35.7
W
0.29
W/
Linear Derating Factor 2
EAS
Single Pulse Avalanche Energy
40
mJ
IAR
Avalanche Current
-9
A
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.5
/W
62
/W
201018072-1/4
AP18P10GS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-1mA
-100
-
-
RDS(ON)
Static Drain-Source On-Resistance3
VGS=-10V, ID=-8A
-
-
160
m
VGS=-4.5V, ID=-6A
-
-
200
m
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS= -10V, ID= -8A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-100V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=-80V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-8A
-
16
25.6
nC
VGS(th)
IGSS
3
V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8.7
-
nC
VDS=-50V
-
9
-
ns
-
14
-
ns
-
45
-
ns
40
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=6.25
-
Ciss
Input Capacitance
VGS=0V
-
1590 2550
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
IS=-8A, VGS=0V,
-
49
-
ns
dI/dt=-100A/µs
-
110
-
nC
VGS=-10V
Source-Drain Diode Symbol VSD
Parameter
Test Conditions
3
Forward On Voltage
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25
.
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4
AP18P10GS 20
40
-10V -7.0V -5.0V -4.5V
o
T C = 25 C
15
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-10V -7.0V -5.0V -4.5V
T C =150 o C
20
10
10
V G = -3.0V 5
V G = -3.0 V
0
0 0
4
8
12
16
0
20
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
2.0
I D = -8 A T C =25
270
I D = - 12 A V G = -10V 1.6
RDS(ON) (m
)
Normalized RDS(ON)
240
210
180
1.2
0.8
150
0.4
120
4
6
8
10
-50
0
50
100
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
8
2.0
6
1.5
T j =150 o C
4
Normalized -VGS(th) (V)
-IS(A)
2
T j =25 o C
2
150
1.0
0.5
0.0
0 0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4
AP18P10GS f=1.0MHz 10000
12
C iss
V DS = - 80 V ID= -8A
1000
9
C (pF)
-VGS , Gate to Source Voltage (V)
15
6
C oss
100
C rss 3
10
0 0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
Normalized Thermal Response (Rthjc)
1
-ID (A)
100us
1ms 1
10ms 100ms DC
o
T C =25 C Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t 0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse
0.01
0 0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V DS = -5V
T j =25 o C
-ID , Drain Current (A)
12.5
VG
T j =150 o C
QG 10
-4.5V QGS
7.5
QGD
5
2.5
Charge
Q
0 0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263 E SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3 b
e
L4
Millimeters
A A2
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
c
c1
A1
Part Marking Information & Packing : TO-263 Part Number Package Code XXXXXS 18P10GS YWWSSS
LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
