Transcript
AP2313GN-HF Halogen-Free Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
-20V
RDS(ON)
Small Package Outline
160m
ID
Surface Mount Device
-2.5A
S
RoHS Compliant & Halogen-Free SOT-23
G
D
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G S
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
-20
V
+12
V
3
-2.5
A
3
-1.97
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
-10
A
PD@TA=25
Total Power Dissipation
0.83
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 3
150
Unit /W 1 201201044
AP2313GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/
Parameter
Test Conditions
Drain-Source Breakdown Voltage Tj
RDS(ON)
Min.
Typ.
-20
-
-
-
-0.01
-
V/
VGS=-10V, ID=-2.8A
-
-
120
m
VGS=-4.5V, ID=-2.5A
-
-
160
m
VGS=-2.5V, ID=-2A
-
-
300
m
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance
2
, ID=-1mA
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V
-
-
-25
uA
VGS=+12V, VDS=0V
-
-
+100
nA
ID=-2A
-
5
8
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-10V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=-10V
-
16
-
ns
tf
Fall Time
RD=10
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS=-20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 360
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP2313GN-HF 15
15
-5.0V -4.5V
T A =25 o C 12
12
-3. 5 V
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V -4.5V
T A = 150 o C
9
-2.5V 6
3
-3.5V 9
-2.5V
6
3
V G = - 1. 5 V
V G = - 1. 5 V 0
0 0
1
2
3
4
5
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
4
5
Fig 2. Typical Output Characteristics
1.6
200
I D =-2A
I D = - 2.5 A V G = -4.5V
1.4
Normalized RDS(ON)
T A =25 o C 160
RDS(ON) (
)
1
-V DS , Drain-to-Source Voltage (V)
120
1.2
1.0
0.8
80
0.6 2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
Normalized VGS(th) (V)
3
2
-IS(A)
T j =150 o C
T j =25 o C
1
0
1.2
0.8
0.4 0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP2313GN-HF f=1.0MHz 1000
I D =- 2 A V DS =-16V
6
C iss C (pF)
-VGS , Gate to Source Voltage (V)
8
4
100
C oss C rss
2
10
0 0
2
4
6
1
8
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms 1
10ms 100ms
T A =25 o C Single Pulse
0.1
1s DC
0.2
0.1
0.1
0.05
PDM t T
0.01
0.01
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 360
/W
0.001
0.01 0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
