Transcript
AP30T03GH-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
BVDSS
D
30V
RDS(ON)
Simple Drive Requirement Fast Switching Characteristic
ID
G
RoHS Compliant & Halogen-Free
30m 17A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current
17
A
ID@TC=100
Continuous Drain Current
10
A
60
A
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
12.5
W
PD@TA=25
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c Rthj-a
Value
Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
3
Units
10
/W
62.5
/W 1 200909281
AP30T03GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=10A
-
-
30
m
VGS=4.5V, ID=8A
-
-
50
m V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=10A
-
10
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=8A
-
4.5
7.2
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.9
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
5
-
ns
tr
Rise Time
ID=8A
-
22
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-
13
-
ns
tf
Fall Time
RD=1.88
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
230
370
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Min.
Typ.
IS=8A, VGS=0V
-
-
1.2
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
2 2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP30T03GH-HF 50
40
10V 7.0V 6.0V
ID , Drain Current (A)
40
T C =150 o C
ID , Drain Current (A)
T C =25 o C
5.0V
30
V G = 4.0 V
20
10V 7.0V 6.0V 5.0V
30
20
V G =4.0V
10 10
0
0 0.0
2.0
4.0
6.0
0.0
8.0
1.0
2.0
Fig 1. Typical Output Characteristics
5.0
6.0
2.0
I D =8A
I D =10A V G =10V
T C =25 o C 50
Normalized RDS(ON)
)
4.0
Fig 2. Typical Output Characteristics
60
RDS(ON) (m
3.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
40
1.6
1.2
0.8
30
0.4
20 2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
10
6
Normalized VGS(th) (V)
IS(A)
8
T j =25 o C
o T j =150 C
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP30T03GH-HF 10
f=1.0MHz
400
V DS =15V V DS =18V V DS =24V
6
300
C (pF)
VGS , Gate to Source Voltage (V)
I D =8A 8
C iss 200
4
100 2
C oss C rss
0
0 0
2
4
6
8
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
ID (A)
10
100us
1ms 10ms 100ms DC
1
T C =25 o C Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor = 0.5
0.2
0.1
0.1 0.05
PDM
t
0.02
T 0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0 0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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