Transcript
AP3405GH-HF Halogen-Free Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
BVDSS
D
Simple Drive Requirement Fast Switching Characteristic
G
-30V
RDS(ON)
90m
ID
-8.6A
RoHS Compliant & Halogen-Free S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
-8.6
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
-5.4
A
1
IDM
Pulsed Drain Current
-20
A
PD@TC=25
Total Power Dissipation
10.4
W
PD@TA=25
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Value
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Units
12.0
/W
62.5
/W 1 200908101
AP3405GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-6A
-
-
90
m
VGS=-4.5V, ID=-4A
-
-
130
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-6A
-
4.6
7.4
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.7
-
nC
VDS=-15V
-
6
-
ns
-
18
-
ns
-
17
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-6A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=2.5
-
4.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
290
465
pF
Coss
Output Capacitance
VDS=-25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
-
Min.
Typ.
IS=-6A, VGS=0V
-
-
-1.2
V
IS=-6A, VGS=0V,
-
18
-
ns
dI/dt=-100A/µs
-
11
-
nC
VGS=-10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP3405GH-HF 12
30
-10V -7.0V -6.0V -5.0V V G = - 4.0 V
T C = 150 o C
-10V -7.0 V -6.0 V -5.0 V
10
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o C
20
V G = - 4.0 V
10
8
6
4
2
0
0 0
2
4
6
8
0
10
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
2.0
I D = -4 A T C =25
110
I D = -6A V G = -10V
1.8
Normalized RDS(ON)
1.6
RDS(ON) (m
)
100
90
80
1.4
1.2
1.0
0.8 70
0.6
0.4
60
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
5
1.4
Normalized -VGS(th) (V)
1.6
4
-IS(A)
50
100
150
Fig 4. Normalized On-Resistance v.s. Junction Temperature
6
T j =25 o C
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
3
2
1.2
1
0.8
0.6
1
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP3405GH-HF 10
f=1.0MHz
600
V DS =-24V I D =-6A
400
C (pF)
-VGS , Gate to Source Voltage (V)
500
8
6
300
C iss
4 200
2 100
0
C oss C rss
0
0
2
4
6
1
8
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
Operation in this area limited by RDS(ON)
-ID (A)
10
100us
1
1ms 10ms 100ms DC
T C =25 o C Single Pulse 0.1
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse
0.01 0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
