Transcript
AP3990P RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
100% Avalanche Test
D
Fast Switching Characteristic Simple Drive Requirement
BVDSS
600V
RDS(ON)
0.6
ID
G
10A
S
Description AP3990 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G
D
S
TO-220(P)
The TO-220 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+ 30
V
ID@TC=25
Continuous Drain Current, V GS @ 10V
10
A
ID@TC=100
Continuous Drain Current, V GS @ 10V
6.5
A
40
A
174
W
50
mJ
10
A
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation 2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
0.72
/W
62
/W 1 200903053
AP3990P o
Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage 3
Min.
Typ.
Max. Units
VGS=0V, ID=1.0mA
600
-
-
VGS=10V, ID=5.0A
-
-
0.6
V
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4.5
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=10A
-
34
57
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
19
-
ns
tr
Rise Time
ID=10A
-
28
-
ns
td(off)
Turn-off Delay Time
RG=10
-
43
-
ns
tf
Fall Time
RD=30
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
2030 3250
pF
Coss
Output Capacitance
VDS=25V
-
225
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
9
-
pF
Min.
Typ.
IS=10A, VGS=0V
-
-
1.5
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
3 3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
600
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
uC
Notes: 1.Pulse width limited by Max. junction temperature. o
2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25
, IAS=10A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP3990P 20
12
o
T C =25 C
10V 7 .0V 6 .0V
10
ID , Drain Current (A)
16
ID , Drain Current (A)
T C =150 o C
10V 7.0V 6.0V
12
8
8
V G =5 0V
6
4
4 2
V G =5.0V 0
0 0
5
10
15
0
20
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
1.3
I D =5A V G =10V
2.8
Normalized RDS(ON)
Normalized BVDSS (V)
1.2
1.1
1
2.4
2
1.6
1.2
0.8 0.9 0.4
0
0.8 -50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature 1.4
10
IS (A)
T j = 150 o C
Normalized VGS(th) (V)
1.2
T j = 25 o C
1
1
0.8
0.6
0.4
0.1 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP3990P f=1.0MHz 3200
I D =10A V DS =480V
12
2400
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C iss 1600
4
800
0
0 0
20
40
60
C oss C rss 1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
ID (A)
10
1ms 10ms 100ms DC
1
o
T c =25 C Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1 1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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