Transcript
Advanced Power Electronics Corp.
AP4002T-HF-3
N-channel Enhancement-mode Power MOSFET Fast Switching Characteristics
D
Low Gate Charge Simple Drive Requirement
G
RoHS-compliant, halogen-free
BV DSS
600V
RDS(ON)
5Ω
ID
400mA
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4002T-3 is in the popular TO-92 small through-hole package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in low current applications such as small switching power supplies and load switches.
TO-92
G D
S
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID at TL=25°C
Continuous Drain Current
400
mA
3
A
2
W
0.017
W/°C
20
mJ
2
A
1
IDM
Pulsed Drain Current
PD at TL=25°C
Total Power Dissipation Linear Derating Factor 2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data Symbol
Parameter
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
150
°C/W
Rthj-l
Maximum Thermal Resistance, Junction-lead
60
°C/W
Ordering Information AP4002T-HF-3AP : in RoHS-compliant halogen-free TO-92, shipped on Ammopak, 2000pcs/reel
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200807312-3
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Advanced Power Electronics Corp.
AP4002T-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=400mA
-
-
5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=400mA
-
570
-
mS
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
-
±1
uA
ID=2A
-
12
19
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=50Ω ,VGS=10V
-
52
-
ns
tf
Fall Time
RD=200Ω
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
Tj=25°C, IS=2A, VGS=0V
-
-
1.5
V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
3 3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.2
-
uC
Notes: 1.Pulse width limited by maximum junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
AP4002T-HF-3
Typical Electrical Characteristics 2
2
T A =25 o C
ID , Drain Current (A)
ID , Drain Current (A)
15
10V 7.0V 6.0V 5.0V
T A =150 o C
10V 7.0V 6.0V
1
5.0V
15
1
V G = 4.5 V 05
05
V G = 4.5 V
0
0 0
4
8
0
12
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics 3
1.2
I D =400mA V G =10V Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1
0.9
0.8
0 - 0
0
50
100
- 0
150
Fig 3.
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Normalised BVDSS vs. Junction Temperature
Fig 4. Normalized On-Resistance vs. Junction Temperature 1.2
10
6
o T j = 25 C
T j = 150 o C
IS (A)
Normalized VGS(th) (V)
8
4
1
0.8
0.6 2
0.4
0 0
02
0.4
0.6
08
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
1.4
- 0
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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Advanced Power Electronics Corp.
AP4002T-HF-3
Typical Electrical Characteristics (cont.) f=1.0MHz
1000
C iss
12
I D =2A V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss
4
C rss 10
0 0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
1
ID (A)
1ms 10ms 0.1
100ms 1s o
0.01
T L =25 C Single Pulse
DC
0.001
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0 05
0.02
PDM
0.01
0.01
t T Duty factor t/T Peak Tj PDM x Rthjl T L
Single Pulse
Rthjl 60 oC/W
0.001 1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
Charge
Q
Fig 12. Gate Charge Waveform
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Advanced Power Electronics Corp.
AP4002T-HF-3
Package Dimensions: TO-92
1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions.
Marking Information:
Product: AP4002 4002T YWWSSS
Package Code: T = RoHS-compliant halogen-free TO-92
Date/lot code Y = Last digit of the year WW = Work week SSS = lot code sequence
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
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