Transcript
AP4226AGM RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-Resistance
BVDSS
D2
Simple Drive Requirement
D1
D2
RDS(ON)
D1
Dual N MOSFET Package S1
G1
18m
ID
G2
SO-8
30V 8.7A
S2
Description
D2
D1
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G2
G1
S2
S1
The SO-8 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
30
V
+20
V
3
8.7
A
3
7
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
40
A
PD@TA=25
Total Power Dissipation
2
W
Linear Derating Factor
0.016
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
W/
Thermal Data Symbol Rthj-a
Value
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
62.5
Unit /W
1 200812093
AP4226AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
VGS=10V, ID=8A
-
-
18
m
VGS=4.5V, ID=6A
-
-
24
m
VGS=0V, ID=250uA 2
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
23
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=8A
-
10
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=15V
-
8.5
-
ns
-
5.5
-
ns
-
22
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=15
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
860
1420
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
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AP4226AGM 50
40
T A = 25 o C
ID , Drain Current (A)
40
ID , Drain Current (A)
T A = 150 o C
10 V 7.0 V 6.0 V 5.0 V
30
V G =3.0V 20
10 V 7.0 V 6.0 V 5.0 V
30
V G =3.0V 20
10 10
0
0
0
1
2
3
0
4
1
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
19
1.9
ID=6A T A =25
ID=8A V G =10V Normalized RDS(ON)
18
)
17
RDS(ON) (m
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
16
15
1.4
0.9
14
0.4
13
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6
10
T j =150 o C
T j =25 o C Normalized VGS(th) (V)
IS(A)
8
6
4
1.2
0.8
0.4 2
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP4226AGM 10
f=1.0MHz
1600
8 1200
V DS = 15 V V DS = 18 V V DS = 24 V
6
C (pF)
VGS , Gate to Source Voltage (V)
ID=8A
C iss
800
4
400 2
C oss C rss 0
0 0
4
8
12
16
20
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
ID (A)
10
100us 1ms 10ms
1
100ms 1s
0.1
T A =25 o C Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t T
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W
0.001
0.01 0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8 D
Millimeters
8
7
6
5 E1
1 2
3
4
e B
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38 0.00
0.90 4.00
8.00
A A1
1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement
4226AGM YWWSSS
Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
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