Transcript
AP4409AGEM RoHS-compliant Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D D
D
D
Low On-resistance Fast Switching Characteristic
G
SO-8
S
S
-35V
RDS(ON)
7.5m
ID
-14.5A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
-35
V
±20
V
3a
-14.5
A
3a
-12
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
-50
A
PD@TA=25
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Value
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3a
50
Unit /W
1 200801091
AP4409AGEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-35
-
-
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-7A
-
-
7.5
m
VGS=-4V, ID=-7A
-
-
15
m
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±30
uA
ID=-14A
-
58
90
nC
VGS(th)
IGSS
2
V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
37
-
nC
VDS=-15V
-
15
-
ns
-
13
-
ns
-
76
-
ns
60
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=15
-
Ciss
Input Capacitance
VGS=0V
-
4100 6600
pF
Coss
Output Capacitance
VDS=-25V
-
640
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
530
-
pF
Min.
Typ.
IS=-14A, VGS=0V
-
-
-1.3
V
VGS=-10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-14A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
44
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board (a) 1 in 2 pad of 2 oz copper
a
, t <10sec (b) 125 /W when mounted on a 0.003 in2 pad of 2 oz copper
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP4409AGEM 50
50
o
T A = 25 C
V G = - 3.0 V
30
20
V G = - 3.0 V 30
20
10
10
0
0
0
1
2
3
0
4
-V DS , Drain-to-Source Voltage (V)
2
3
4
Fig 2. Typical Output Characteristics
1.8
18
ID=-7A T A =25
I D =-7A V G =-10V
Normalized RDS(ON)
16
)
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(ON\) (m
-10V - 7.0 V - 5.0 V - 4.5 V
40
-ID , Drain Current (A)
40
-ID , Drain Current (A)
T A = 150 o C
- 10V -7.0 V -5.0 V -4.5 V
14
12
10
1.4
1.0
8
0.6
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8
10
8
Normalized -VGS(th) (V)
1.4
o
o
T j =150 C
T j =25 C
-IS(A)
6
4
1.0
0.6
2
0.2
0 0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP4409AGEM
ID= -14A V DS = - 30 V
12
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
16
8
1000
C oss C rss
4
100
0 0
30
60
90
1
120
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
1ms
10
10ms -ID (A)
1
100ms 1s 0.1
T A =25 o C Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM 0.01
t
0.01
T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125oC/W
Single Pulse
0.001 0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8 D
8
7
Millimeters
6
5
E1 1 2
3
4
SYMBOLS
MIN
NOM MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
4.00
8.00
0
e e
B
1.27 TYP
A A1 DETAIL A
L
1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions.
c DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
4409AGEM YWWSSS
Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
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