Transcript
AP4410AGM RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Characteristic
BVDSS RDS(ON) ID
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30V 13.5m 10A
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SO-8
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Description
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
30
V
+20
V
3
10
A
3
8
A
Continuous Drain Current
Continuous Drain Current 1
IDM
Pulsed Drain Current
50
A
PD@TA=25
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
o
C
-55 to 150
o
C
TJ
Operating Junction Temperature Range
Thermal Data Symbol Rthj-a
Value
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
50
Unit o
C/W
1 201003303
AP4410AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
VGS=10V, ID=10A
-
-
13.5
m
VGS=4.5V, ID=5A
-
-
20
m
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=9A
-
12
18
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=10V
-
22
-
ns
tf
Fall Time
RD=15
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
710
1350
pF
Coss
Output Capacitance
VDS=25V
-
155
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.2
V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=9A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
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AP4410AGM 40
40
30
30
V G = 3.0 V
20
10
20
V G = 3.0 V
10
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
18
I D = 10 A V G =10V
ID=5A T A =25 1.4
)
Normalized RDS(ON)
16
14
RDS(ON) (m
10V 7.0 V 5.0 V 4.5 V
T A = 150 o C
10V 7.0 V 5.0 V 4.5 V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
12
1.2
1.0
0.8
10
8
0.6 2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
10
1.4
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
4
1.2
1.0
0.8 2
0.6
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP4410AGM f=1.0MHz
1000
12
ID=9A C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
V DS = 20 V 6
4
C oss C rss
2
100
0 0
5
10
15
20
1
25
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
10
1ms 1
10ms 100ms 1s
0.1
T A =25 o C Single Pulse
DC
Normalized Thermal Response (Rthja)
1
Operation in this area limited by RDS(ON)
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
PDM
0.05
t T 0.02
Duty factor = t/T Peak Tj = PDM x Rthja + T a
0.01
Rthia=125
/W
Single Pulse
0.01
0.01 0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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