Transcript
AP4413GM Pb Free Plating Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
! Simple Drive Requirement
D D
! Low On-resistance
D D
! Fast Switching Characteristic G S
SO-8
BVDSS
-20V
RDS(ON)
30m"
ID
-7.8A
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G S
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25# ID@TA=70#
Rating
Units
-20
V
±20
V
3
-7.8
A
3
-6.2
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
-30
A
PD@TA=25#
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/#
TSTG
Storage Temperature Range
-55 to 150
#
TJ
Operating Junction Temperature Range
-55 to 150
#
Thermal Data Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
#/W
200413042
AP4413GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-
-
V
-
-0.01
-
V/#
VGS=-10V, ID=-7A
-
-
30
m"
VGS=-4.5V, ID=-4A
-
-
40
m"
VGS=-2.5V, ID=-2A
-
-
65
m"
-0.5
-
-1.5
V
BVDSS
Drain-Source Breakdown Voltage
$BVDSS/$Tj
Breakdown Voltage Temperature Coefficient Reference to 25#, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=-250uA VDS=-10V, ID=-7A
-
16
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-7A
-
17
27
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
VDS=-10V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-2A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3",VGS=-10V
-
40
-
ns
tf
Fall Time
RD=10"
-
13
-
ns
Ciss
Input Capacitance
VGS=0V
-
1140 1820
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.3
-
"
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 #/W when mounted on Min. copper pad.
AP4413GM 120
90
-10V
o
T A = 25 C -ID , Drain Current (A)
-ID , Drain Current (A)
-7.0V
80
-5.0V -4.5V
60
40
-10V -7.0V
o
80
100
T A = 150 C
70
60
-5.0V 50
-4.5V
40
30
V G = - 2.5 V
20
20
V G = - 2.5 V
10
0
0
0
1
2
3
4
5
6
7
8
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
7
8
Fig 2. Typical Output Characteristics
70
1.6
ID=-4A T A =25 #
ID=-7A V G =-10V
1.4
Normalized R DS(ON)
60
50
RDS(ON) (m" )
2
-V DS , Drain-to-Source Voltage (V)
40
30
1.2
1.0
0.8 20
0.6
10
1
3
5
7
9
-50
11
0
50
100
150
o
T j , Junction Temperature ( C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 3
7
6
5
-VGS(th) (V)
2
-IS(A)
4
o
o
T j =150 C
3
T j =25 C
1 2
1
0
0 0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
AP4413GM f=1.0MHz 10000
I D = -7A V DS = -16V
10
8
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
4
C oss C rss
2
0
100 0
10
20
30
40
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
1
10ms 100ms 1s
0.1
T A =25 o C Single Pulse
DC
0.2
0.1
0.1
0.05
0.02 0.01
PDM 0.01
t
Single Pulse
T Duty factor = t/T Peak Tj = PDM x Rthja + Ta o
Rthja=125 C/W
0.001
0.01 0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
