Transcript
AP4427GM RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D D
Fast Switching Characteristic
35V
RDS(ON)
D D
6.6m
ID
RoHS Compliant SO-8
S
S
S
16A
G
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G S
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
35
V
+20
V
3
16
A
3
12.8
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
60
A
PD@TA=25
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Value
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
50
Unit /W
1 200811032
AP4427GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Test Conditions
Drain-Source Breakdown Voltage
BVDSS VDSS/
Parameter
Tj
RDS(ON)
Min.
Typ.
35
-
-
-
0.03
-
V/
VGS=10V, ID=7.5A
-
-
6.6
m
VGS=4.5V, ID=7.5A
-
-
10
m
0.8
-
2.3
V
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance2
, ID=1mA
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=7.5A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=30V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=15A
-
35
56
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
22
-
nC
VDS=15V
-
13
-
ns
-
24
-
ns
-
39
-
ns
17
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7.5A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=2
-
Ciss
Input Capacitance
VGS=0V
-
2850 4560
pF
Coss
Output Capacitance
VDS=10V
-
890
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
635
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.8
1.2
Min.
Typ.
IS=1.9A, VGS=0V
-
-
1.3
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7.5A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP4427GM 60
60
10V 7.0V 5.0V 4.5V
ID , Drain Current (A)
50
10V 7.0V 5.0V 4.5V
o
T A = 150 C 50
ID , Drain Current (A)
T A = 25 o C
40
30
20
40
30
V G =3.0V 20
V G =3.0V 10
10
0
0 0
1
2
3
4
5
0
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
1.9
I D = 7.5 A V G =10V
Normalized RDS(ON)
I D = 7.5 A T A =25
8
RDS(ON) (m
)
2
V DS , Drain-to-Source Voltage (V)
6
1.4
0.9
0.4
4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
14
1.6
T j =25 o C
T j =150 o C
Normalized VGS(th) (V)
12
IS(A)
10
8
6
1.2
0.8
4
2
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP4427GM f=1.0MHz 16
10000
V DS = 16 V V DS = 20 V V DS = 24 V
12
C iss C (pF)
VGS , Gate to Source Voltage (V)
I D = 7.5 A
8
1000
C oss C rss 4
100
0 0
20
40
60
1
80
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
10
Normalized Thermal Response (Rthja)
100us 1ms
ID (A)
10ms 1
100ms
1s
0.1
o
T A =25 C Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t T Duty factor = t/T Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=125 oC/W
0.001
0.01 0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
T j =25 o C
VG
T j =150 o C
ID , Drain Current (A)
100
QG 4.5V
80
QGS
60
QGD
40
20
Charge
Q
0 0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8 D
Millimeters
8
7
6
5 E1
1 2
3
4
e B
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38 0.00
0.90 4.00
8.00
A A1
1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement
4427GM YWWSSS
Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
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