Transcript
AP4951GM RoHS-compliant Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D2 D2
Low Gate Charge
D1 D1
Fast Switching Performance SO-8
S1
S2 G1
-60V
RDS(ON)
96m
ID
-3.4A
G2
Description D2
D1
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G2
G1
S2
S1
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
-60
V
±20
V
3
-3.4
A
3
-2.7
A
-20
A W
Continuous Drain Current
Continuous Drain Current 1
IDM
Pulsed Drain Current
PD@TA=25
Total Power Dissipation
2
Linear Derating Factor
0.016
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
W/
Thermal Data Symbol Rthj-a
Value
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
62.5
Unit /W
201108073-1/4
AP4951GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS VDSS/
Parameter
Test Conditions
Drain-Source Breakdown Voltage Tj
RDS(ON)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
gfs
Forward Transconductance
-60
-
-
-
-0.04
-
V/
VGS=-10V, ID=-3.4A
-
-
96
m
VGS=-4.5V, ID=-2.7A
-
-
120
m
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS=0V, ID=-250uA , ID=-1mA
Max. Units V
VDS=-10V, ID=-3.4A
-
3.4
-
S
o
VDS=-60V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-3A
-
29.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Typ.
Breakdown Voltage Temperature Coefficient Reference to 25
VGS(th) IDSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
7
-
nC
VDS=-30V
-
11
20
ns
-
5
10
ns
-
39
80
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=30
-
10.5
20
ns
Ciss
Input Capacitance
VGS=0V
-
1320
-
pF
Coss
Output Capacitance
VDS=-25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
VGS=-10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
39
80
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
64
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135
/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP4951GM 30
40
-10V -7.0V -5.0V -4.5V
30
-10V -7.0V -5.0V -4.5V
T A =150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
V G =-3.0V
20
V G =- 3 .0V 10
10
0
0 0
2
4
6
8
0
10
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
100
I D = -2.7A T A =25
I D = -3.4A V G = -10V Normalized RDS(ON)
RDS(ON) (m
)
1.6 90
80
1.2
0.8
0.4
70 2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8
10.00
1.6
8.00
-IS(A)
o
T j =25 o C
1.4
-VGS(th) (V)
T j =150 C
6.00
4.00
1.2
1
2.00 0.8
0.00
0.6
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4
AP4951GM f=1.0MHz 10000
12
I D = -3A V DS = -48V
C iss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C oss C rss
100 4
0
10 0
10
20
30
40
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us 1ms
1
10ms 100ms
0.1
1s
o
T A =25 C Single Pulse
DC
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02 0.01
PDM
0.01
t T Single Pulse
Duty Factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W
0.001
0.01 0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS = -5V T j =25 o C
VG
T j =150 o C
-ID , Drain Current (A)
16
QG -10V
12
QGS
QGD
8
4
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8 D
8
7
Millimeters
6
5
E1 1 2
3
4
SYMBOLS
MIN
NOM MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
4.00
8.00
0
e e
B
1.27 TYP
A A1 DETAIL A
L
1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions.
c DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
4951GM YWWSSS
Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
