Transcript
AP60T03GS/P RoHS-compliant Product
Advanced Power Electronics Corp. Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON)
Low Gate Charge Fast Switching Speed
ID
G
30V 12m 45A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GP) are available for low-profile applications.
TO-220(P)
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
45
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
32
A
120
A W
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
44
Linear Derating Factor
0.352
W/
TSTG
Storage Temperature Range
-55 to 175
TJ
Operating Junction Temperature Range
-55 to 175
Thermal Data Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
1 200809253
AP60T03GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS VDSS/ Tj RDS(ON)
VGS(th)
Parameter
Test Conditions
Min.
Typ.
30
-
-
-
0.03
-
V/
VGS=10V, ID=20A
-
-
12
m
VGS=4.5V, ID=15A
-
-
25
m
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
25
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=20A
-
11.6
19
nC
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance 2
Gate Threshold Voltage 2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
, ID=1mA
o
IGSS
2
Max. Units V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8.8
-
ns
-
57.5
-
ns
-
18.5
-
ns
6.4
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=0.75
-
Ciss
Input Capacitance
VGS=0V
-
1135 1816
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
-
-
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
Test Conditions IS=45A, VGS=0V
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units 1.3
V
IS=20A, VGS=0V,
-
23.3
-
ns
dI/dt=100A/µs
-
16
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP60T03GS/P 90
125
10V 8.0V
ID , Drain Current (A)
100
6.0V 75
5.0V 50
25
6.0V
60
5.0V
30
V G =4.0V
V G =4.0V
0
0 0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =20A V G =10V
I D =15A T C =25
1.6
)
Normalized R DS(ON)
60
RDS(ON) (m
10V 8.0V
T C =175 o C ID , Drain Current (A)
o
T C =25 C
40
1.2
0.8
20
0
0.4 2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
10
2
VGS(th) (V)
3
IS(A)
175
T j , Junction Temperature ( C)
100
o
100
o
Fig 3. On-Resistance v.s. Gate Voltage
o
T j =175 C
25
T j =25 C
1
1
0
0.1 0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP60T03GS/P f=1.0MHz 10000
12
V DS =16V V DS =20V V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
6
C iss 1000
3
C oss C rss 100
0 0
6
12
18
1
24
8
Q G , Total Gate Charge (nC)
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
100us 10
1ms 10ms o
100ms
T C =25 C Single Pulse
Duty factor = 0.5
0.2
0.1
0.1 0.05
PDM 0.02
t T
0.01 Single Pulse
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
DC
1
0.01 0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263 E E3
SYMBOLS
E1 E2
D1 D
b1
L2
L3 b
e
L4
A
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
D1
----
5.10(ref)
----
E
9.70
10.10
10.50
E1
----
7.40(ref)
----
E2
----
6.40(ref)
----
E3
----
8.00(ref)
----
e
2.04
2.54
3.04
L1
----
2.54(ref)
----
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
0°
-----
5°
A2
1.All Dimensions Are in Millimeters.
c
c1
Millimeters
2.Dimension Does Not Include Mold Protrusions.
A1 L1
Part Marking Information & Packing : TO-263 Part Number Package Code
60T03GS YWWSSS
LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220 E
A
E1
SYMBOLS
L1 L5 c1
D1 D L4
Millimeters MIN
NOM
MAX
A
4.40
4.60
4.80
b D c E
0.76
0.88
1.00
8.60
8.80
9.00
0.36
0.43
0.50
9.80
10.10
10.40
L4
14.70
15.00
15.30
L5
6.20
6.40
6.60
D1
b1
5.10 REF.
c1
1.25
1.35
1.45
b1
1.17
1.32
1.47
L
13.25
13.75
14.25
2.54 REF.
e L1
2.60 3.71
L
E1
c
b
2.75
2.89
3.84
3.96
7.4 REF,
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220 Part Number
Package Code 60T03GP
LOGO YWWSSS Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
6
