Transcript
AP6679BGH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-resistance
D
Simple Drive Requirement Fast Switching Characteristic
G
BVDSS
-30V
RDS(ON)
9m
ID
-63A
RoHS Compliant & Halogen-Free S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679BGJ) is available for low-profile applications.
D
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
-63
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
-40
A
1
IDM
Pulsed Drain Current
-240
A
PD@TC=25
Total Power Dissipation
54.3
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maximum Thermal Resistance Junction-case 3
Units
2.3
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
1 201004142
AP6679BGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-40A
-
-
9
m
VGS=-4.5V, ID=-30A
-
-
15
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
60
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-30A
-
44
70
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
28.5
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-30A
-
67
-
ns
td(off)
Turn-off Delay Time
RG=1
-
37
-
ns
tf
Fall Time
RD=0.5
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
3500 5600
pF
Coss
Output Capacitance
VDS=-25V
-
520
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
495
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
-
Min.
Typ.
IS=-30A, VGS=0V
-
-
-1.2
V
IS=-10A, VGS=0V,
-
34
-
ns
dI/dt=100A/µs
-
30
-
nC
,VGS=-10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP6679BGH/J-HF 240
160
T C = 25 o C
-ID , Drain Current (A)
200
-ID , Drain Current (A)
T C = 150 o C
-10V -7.0 V -6.0 V -5.0 V
160
V G = - 4.0 V
120
80
120
-10V -7.0V -6.0V -5.0V V G = - 4.0 V
80
40 40
0
0 0
4
8
12
0
16
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I D = -30 A T C =25
I D = -40A V G = -10V
1.8
12
Normalized RDS(ON)
1.6
) RDS(ON) (m
2
-V DS , Drain-to-Source Voltage (V)
10
8
1.4
1.2
1.0
0.8
0.6
0.4
6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
40
1.6
Normalized -VGS(th) (V)
1.4
-IS(A)
30
T j =150 o C
T j =25 o C
20
1.2
1
0.8
10
0.6
0.4
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP6679BGH/J-HF
8
4000
C iss
V DS =-24V I D =-30A 6
3000
4
2000
2
1000
C oss C rss
0
0 0
20
40
60
1
80
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
Operation in this area limited by RDS(ON)
-ID (A)
100
f=1.0MHz
5000
C (pF)
-VGS , Gate to Source Voltage (V)
10
100us
1ms
10
10ms 100ms DC
T C =25 o C Single Pulse 1
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse
0.01 0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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