Transcript
AP7811GM Pb Free Plating Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
! Low On-Resistance
D D
! Fast Switching
D D
! Simple Drive Requirement G S
SO-8
BVDSS
25V
RDS(ON)
12m"
ID
11.8A
S
S
Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
G S S
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25# ID@TA=70#
Rating
Units
25
V
±12
V
3
11.8
A
3
9.4
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
30
A
PD@TA=25#
Total Power Dissipation
2.5
W
0.02
W/#
TSTG
Storage Temperature Range
-55 to 150
#
TJ
Operating Junction Temperature Range
-55 to 150
#
Linear Derating Factor
Thermal Data Symbol Rthj-amb
Parameter Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
#/W
20020507
AP7811GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
25
-
-
V
-
0.1
-
V/#
VGS=4.5V, ID=11.8A
-
10
12
m"
VDS=VGS, ID=250uA
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
$BVDSS/$Tj
Breakdown Voltage Temperature Coefficient Reference to 25#, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=15V, ID=11.8A
-
30
-
S
o
VDS=25V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±12V
-
-
±100
nA
ID=11.8A
-
32
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
15.5
-
nC
VDS=15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1.5A
-
28
-
ns
td(off)
Turn-off Delay Time
RG=3.3",VGS=5V
-
41
-
ns
tf
Fall Time
RD=10"
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
-
pF
Coss
Output Capacitance
VDS=20V
-
460
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
215
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
2.08
A
Tj=25#, IS=2.3A, VGS=0V
-
-
1.2
V
Source-Drain Diode Symbol IS VSD
Parameter Continuous Source Current ( Body Diode ) 2
Forward On Voltage
Test Conditions
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 #/W when mounted on Min. copper pad.
Max. Units
AP7811GM
30
40
o
4.5V 3.5V 3.0V 2.5V
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
30
20
20
V GS =2.0V 10
V GS =2.0V
10
0
0
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
18
1.80
I D =11.8A
I D =11.8A
o
T C =25 C
V GS =4.5V
1.60
Normalized R DS(ON)
16
RDS(ON) (mohm)
4.5V 3.5V 3.0V 2.5V
T C =150 o C
14
12
1.40
1.20
1.00
10 0.80
0.60
8 2
3
4
5
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
150
AP7811GM
15
3
2.5
ID , Drain Current (A)
12
2
PD (W)
9
1.5
6
1
3
0.5
0
0 25
50
75
100
125
150
0
30
60
o
T c , Case Temperature ( C)
90
120
150
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
1ms
ID (A)
10ms 1
100ms
1s 0.1
10s DC
T C =25 o C Single Pulse 0.01
0.2
0.1
0.1
0.05
0.02 0.01
PDM
t
0.01
T Single Pulse
Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W
0.001 0.1
1
10
100
V DS (V)
Fig 7. Maximum Safe Operating Area
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP7811GM
f=1.0MHz
10000
12
I D =11.8A VGS , Gate to Source Voltage (V)
10
V DS =10V V DS =15V
8
C (pF)
V DS =20V 6
Ciss
1000
4
Coss
2
Crss
100
0 0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.6
100.00
1.4
10.00
1.2
IS(A)
VGS(th) (V)
T j =25 o C
T j =150 o C 1.00
1
0.8
0.6 0.10
0.4
0.01
0.2 0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
150
AP7811GM
VDS 90%
RD
VDS
D
RG
TO THE OSCILLOSCOPE 0.6 x RATED VDS
G
+
10% VGS
S 5v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off)
tr
tf
Fig 14. Switching Time Waveform
VG VDS
QG
TO THE OSCILLOSCOPE
D
5V 0.8 x RATED VDS G S +
QGS
QGD
VGS
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q
