Transcript
AP9465BGH/J RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
BVDSS
D
40V
RDS(ON)
Simple Drive Requirement Fast Switching Characteristic
ID
G
32m 20A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications. The through-hole version (AP9465BGJ) are available for low-profile applications.
G
D
D
S
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current
20
A
ID@TC=100
Continuous Drain Current
12
A
1
IDM
Pulsed Drain Current
60
A
PD@TC=25
Total Power Dissipation
20.8
W
Linear Derating Factor
0.17
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Parameter
Value
Maximum Thermal Resistance, Junction-case 3
Units
6.0
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
1 200903092
AP9465BGH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
VGS=10V, ID=12A
-
-
32
m
VGS=4.5V, ID=8A
-
-
45
m
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V, VGS=0V
-
-
250
uA
VGS=+20V, VDS=0V
-
-
+100
nA
ID=12A
-
6.6
11
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=20V
-
4.7
-
ns
-
23
-
ns
-
16
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=1.67
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
VGS=10V
Source-Drain Diode Symbol
Parameter 2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=12A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=12A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9465BGH/J 40
40
10V 7.0 V 5.0V 4.5 V
ID , Drain Current (A)
T C =25 C 30
10V 7 .0V 5.0V 4.5 V
T C =150 o C ID , Drain Current (A)
o
20
V G = 3.0 V 10
30
20
V G =3.0V 10
0
0 0.0
1.0
2.0
3.0
4.0
5.0
0.0
V DS , Drain-to-Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
40
I D =12A V G =10V
I D =8A T C =25 o C
RDS(ON) (m
)
Normalized RDS(ON)
36
32
28
1.6
1.2
0.8 24
0.4
20 2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2
10
1.1
IS(A)
T j =150 o C
Normalized VGS(th) (V)
8
T j =25 o C
6
4
1.0
0.9
0.8
2 0.7
0
0.6
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9465BGH/J f=1.0MHz
1000
I D =12A
C iss
12
V DS =20V V DS =24V V DS =32V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss C rss 4
10
0 0
4
8
12
1
16
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
10
ID (A)
100us
1ms 1
10ms 100ms DC
o
T C =25 C Single Pulse 0
0.2
0.1
0.1 0.05
PDM
t
0.02
T 0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V DS =5V
VG
ID , Drain Current (A)
30
T j =25 o C
QG
T j =150 o C
4.5V QGS
20
QGD
10
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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