Transcript
AP94T07GH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
75V
RDS(ON)
Lower On-resistance Fast Switching Characteristic
ID
G
RoHS Compliant & Halogen-Free
8m 75A
S
Description Advanced Power MOSFETs fromfrom APEC provide the the The Advanced Power MOSFETs APEC provide designer with the best combination of fast switching, designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP94T07GJ) is available for low-profile applications.
D
TO-251(J)
S
G
D
S
TO-252(H)
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@Tc=25
Continuous Drain Current, V GS @ 10V
ID@Tc=100
Continuous Drain Current, V GS @ 10V
3
1
IDM
Pulsed Drain Current
PD@Tc=25
Total Power Dissipation 4
Rating
Units
75
V
+20
V
75
A
58
A
300
A
125
W
2.4
W
PD@TA=25
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
TJ
Operating Junction Temperature Range
-55 to 175
Thermal Data Symbol
Value
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1.2 4
Units /W
62.5
/W
110
/W 1 201104282
AP94T07GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
75
-
-
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
8
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=40A
-
58
92
nC
2
V m
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=60V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
29
-
nC
2
td(on)
Turn-on Delay Time
VDS=40V
-
13
-
ns
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=1
-
26
-
ns
tf
Fall Time
VGS=10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
2350 3760
pF
Coss
Output Capacitance
VDS=25V
-
390
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
245
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode Symbol VSD
Parameter Forward On Voltage
2 2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
83
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A. 4.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP94T07GH/J-HF 250
160
ID , Drain Current (A)
200
ID , Drain Current (A)
120
10V 9.0V 8.0V 7.0V
80
V G =6.0V
T C =175 o C
10V 9.0V 8.0V
o
T C =25 C
7.0V
150
100
V G = 6.0V
40 50
0
0 0.0
4.0
8.0
12.0
16.0
20.0
24.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =40A V G =10V Normalized RDS(ON)
Normalized BVDSS (V)
2.4
1.1
1
2.0
1.6
1.2 0.9 0.8
0.8
0.4 -50
0
50
100
150
200
-50
0
100
150
200
T j , Junction Temperature ( C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
40
1.6
30
1.2
o T j =175 C
Normalized VGS(th) (V)
IS(A)
50
o
o
T j =25 o C
20
10
0.8
0.4
0
0.0 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP94T07GH/J-HF f=1.0MHz 12
4000
I D =40A 3000
V DS =40V V DS =45V V DS =60V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss 2000
4 1000 2
C oss C rss
0
0 0
20
40
60
80
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area limited by RDS(ON) 100
ID (A)
100us
10
1ms 10ms 100ms DC
T C =25 o C Single Pulse 1
0.2
0.1
0.1 0.05
PDM
t 0.02
T 0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 0.1
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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