Transcript
AP9564GM RoHS-compliant Product
Advanced Power Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D D
Low On-resistance
D D
Fast Switching Characteristic
G
SO-8
S
-40V
RDS(ON)
28m
ID
-7.3A
S
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=70
Rating
Units
-40
V
+25
V
3
-7.3
A
3
-5.9
A
Continuous Drain Current Continuous Drain Current 1
IDM
Pulsed Drain Current
-30
A
PD@TA=25
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-a
Parameter
Value
Maximum Thermal Resistance, Junction-ambient 3
50
Data and specifications subject to change without notice
Unit /W 1 201009302
AP9564GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/ Tj
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-40
-
-
-
-0.03
-
V/
VGS=-10V, ID=-7A
-
-
28
m
VGS=-4.5V, ID=-5A
-
-
40
m
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance
2
, ID=-1mA
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V
-
-
-25
uA
VGS=+25V, VDS=0V
-
-
+100
nA
ID=-7A
-
27
43
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
14
-
nC
VDS=-20V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=-10V
-
46
-
ns
tf
Fall Time
RD=20
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
2240 3600
pF
Coss
Output Capacitance
VDS=-25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
250
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
57
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9564GM 50
50
-10V -7.0V -5.0V -4.5V
-ID , Drain Current (A)
40
40
30
20
V G = -3.0 V
30
20
V G = -3.0 V
10
10
0
0 0
1
2
3
4
0
5
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
36
ID=-5A T A =25
ID=-7A V G =-10V
)
Normalized RDS(ON)
32
RDS(ON) (m
-10V -7.0V -5.0V -4.5V
o
T A = 150 C -ID , Drain Current (A)
T A =25 o C
28
1.5
1.2
0.9
24
0.6
20 2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
7
1.7
Normalized -VGS(th) (V)
6
-IS(A)
5
T j =150 o C
4
T j =25 o C
3
2
1.2
0.7
1
0.2
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9564GM f=1.0MHz 10000
I D = -7A V DS = -32V
10
8
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
4
C oss C rss
2
0
100 0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
Operation in this area limited by RDS(ON)
10
1ms 10ms
1
100ms 1s
0.1
T A =25 o C Single Pulse
DC
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W
0.001
0.01 0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG -4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
