Transcript
AP95T06GS/P-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
60V
RDS(ON)
Lower On-resistance Fast Switching Characteristic
ID
G
RoHS Compliant & Halogen-Free
8.5m 75A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP95T06GP) are available for low-profile applications. G
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage 3
D
TO-220(P) S
Rating
Units
60
V
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
75
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
66
A
260
A
138
W
1.11
W/
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation Linear Derating Factor 4
EAS
Single Pulse Avalanche Energy
450
mJ
IAR
Avalanche Current
30
A
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.9
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
40
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
1 201108053
AP95T06GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/ Tj
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
60
-
-
-
0.05
-
V/
VGS=10V, ID=45A
-
-
8.5
m
VGS=4.5V, ID=20A
-
-
12
m
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance2
, ID=1mA
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=45A
-
72
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
100
uA
VGS=+20V, VDS=0V
-
-
+100
nA
ID=45A
-
72
115
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
16
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
53
-
nC
VDS=30V
-
20
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=45A
-
76
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-
67
-
ns
tf
Fall Time
VGS=10V
-
109
-
ns
Ciss
Input Capacitance
VGS=0V
-
5700 9200
pF
Coss
Output Capacitance
VDS=25V
-
900
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
560
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V
-
40
-
ns
dI/dt=100A/µs
-
60
-
nC
Source-Drain Diode Symbol VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A . 4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25
, IAS=30A.
2
5.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP95T06GS/P-HF 120
250
10V 7.0 V
ID , Drain Current (A)
200
10V 7.0 V 5.0V 4.5V
T C = 150 o C ID , Drain Current (A)
T C = 25 o C
5.0V 150
4.5V 100
80
40
V G =3.0V 50
V G =3.0V 0
0 0
3
6
9
12
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
9
12
Fig 2. Typical Output Characteristics
11
1.6
I D =45A V G =10V
I D =20A o
Normalized RDS(ON)
T C =25 C )
10
RDS(ON) (m
3
V DS , Drain-to-Source Voltage (V)
9
1.2
0.8 8
7
0.4 2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0
50
Normalized VGS(th) (V)
IS(A)
40
30
T j =150 o C
T j =25 o C
20
1.5
1.0
0.5 10
0.0
0 0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP95T06GS/P-HF f=1.0MHz 10
10000
I D = 45 A
C iss
V DS = 30 V V DS = 38 V V DS = 48 V
6
C (pF)
VGS , Gate to Source Voltage (V)
8
4
1000
C oss C rss
2
0
100 0
20
40
60
80
100
1
120
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us 1ms 10
10ms 100ms DC
o
T c =25 C Single Pulse 1
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
0.02
t 0.01
T Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
130
VG
V DS =5V
o
T j =25 C
104
ID , Drain Current (A)
o
T j =150 C
QG 4.5V 78
QGS
QGD
52
26
Charge
Q
0 0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
