Transcript
AP9962AGH/J-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-resistance
BVDSS
D
RDS(ON)
Single Drive Requirement Surface Mount Package
ID
G
RoHS Compliant & Halogen-Free
40V 20m 32A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
GD
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9962AGJ) are available for low-profile applications.
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
32
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
20
A
1
IDM
Pulsed Drain Current
120
A
PD@TC=25
Total Power Dissipation
27.8
W
Linear Derating Factor
0.22
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Value
Parameter Maixmum Thermal Resistance, Junction-case 3
Unit
4.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
1 200906104
AP9962AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
VGS=10V, ID=20A
-
-
20
m
VGS=4.5V, ID=16A
-
-
30
m
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V ,VGS=0V
-
-
250
uA
VGS= +20V, VDS=0V
-
-
+100
nA
ID=20A
-
12
20
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.8
-
nC
VDS=20V
-
7
-
ns
-
46
-
ns
-
20
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=1.0
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
820
1800
pF
Coss
Output Capacitance
VDS=25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
VGS=10V
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9962AGH/J-HF 100
80
10V 7.0V
o
T C =25 C
10V 7.0V
T C =150 o C ID , Drain Current (A)
ID , Drain Current (A)
80
5.0V
60
4.5V 40
5.0V
60
4.5V 40
20
V G =3.0V
20
V G =3.0V 0
0
0
1
2
3
4
0
5
1
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
28
1.8
I D =16A T C =25 o C
I D =20A V G =10V
1.6
)
Normalized RDS(ON)
24
RDS(ON) (m
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
20
1.4
1.2
1.0
16
0.8
0.6
12
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
16
1.6
Normalized VGS(th) (V)
1.4
IS(A)
12
8
T j =150 o C
o
T j =25 C
1.2
1
0.8
4
0.6
0
0.4 0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9962AGH/J-HF 14
f=1.0MHz
10000
I D =20A V DS =20V V DS =24V V DS =32V
10
1000
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
12
8
6
Coss Crss
100 4
2
10
0 0
5
10
15
20
25
1
30
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100
100us
10
1ms 10ms 100ms DC
1
o
T C =25 C Single Pulse 0.1
Normalized Thermal Response (Rthjc)
1000
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 4.5V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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