Transcript
AP9963AGP-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
BVDSS
D
RDS(ON)
Low On-resistance Fast Switching Characteristic
ID
G
RoHS Compliant & Halogen-Free
40V 4.2m 155A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.
TO-220(P)
D S
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25
Continuous Drain Current (Chip)
155
A
80
A
80
A
320
A
187
W
ID@Tc=25 ID@Tc=100
3
Continuous Drain Current, VGS @ 10V
3
Continuous Drain Current, VGS @ 10V 1
IDM
Pulsed Drain Current
PD@Tc=25
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
TJ
Operating Junction Temperature Range
-55 to 175
Thermal Data Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
1 201010291
AP9963AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=60A
-
-
4.2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
90
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
58
93
nC
2
V m
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
26
-
nC
VDS=20V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=1
-
25
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
2600 4160
pF
Coss
Output Capacitance
VDS=25V
-
600
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
260
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
43
-
ns
dI/dt=100A/µs
-
54
-
nC
Source-Drain Diode Symbol VSD
Parameter 2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9963AGP-HF 300
200
10V 8.0V 7.0V 6.0V
ID , Drain Current (A)
250
200
150
V G = 5.0V
100
T C =175 o C 160
ID , Drain Current (A)
T C =25 o C
10V 8.0V 7.0V 6.0V V G =5.0V
120
80
40 50
0
0 0.0
4.0
8.0
12.0
16.0
20.0
0.0
4.0
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
I D =60A V G =10V
I D =1mA
Normalized RDS(ON)
Normalized BVDSS (V)
1.4
1.2
1
0.8
1.4
0.8
0.6
0.4
0.2 -50
0
50
100
150
200
-50
0
o
50
100
150
200
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature 1.6
40
Normalized VGS(th) (V)
I D =1mA
IS(A)
30
T j =175 o C
T j =25 o C
20
1.2
0.8
0.4
10
0
0.0 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9963AGP-HF f=1.0MHz 12
4000
I D =40A V DS =32V
VGS , Gate to Source Voltage (V)
10
3000
C iss C (pF)
8
6
2000
4 1000
C oss C rss
2
0
0 0
20
40
60
80
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this area limited by RDS(ON)
100us
ID (A)
100
1ms 10
10ms 100ms DC
o
T C =25 C Single Pulse 1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T 0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
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