Transcript
AP9965GEH/J RoHS-compliant Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge
BVDSS
D
Simple Drive Requirement
40V
RDS(ON)
G
ID
Fast Switching Characteristic
28m 27A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9965GEJ) are available for low-profile applications.
D
S
TO-252(H)
G D
TO-251(J)
S
Absolute Maximum Ratings Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+16
V
ID@TC=25
Continuous Drain Current
27
A
ID@TC=100
Continuous Drain Current
17
A
80
A
31.25
W
0.25
W/
1
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Thermal Data Symbol Rthj-c
Parameter
Value
Maximum Thermal Resistance, Junction-case 3
Units
4.0
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
1 200903094
AP9965GEH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS VDSS/ Tj
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
40
-
-
-
0.03
-
V/
VGS=10V, ID=18A
-
-
28
m
VGS=4.5V, ID=12A
-
-
32
m
0.8
-
2.5
V
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance 2
, ID=1mA
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=18A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V, VGS=0V
-
-
250
uA
VGS=+16V, VDS=0V
-
-
+30
uA
ID=18A
-
8.5
14
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.1
-
nC
VDS=20V
-
5.3
-
ns
-
6.7
-
ns
-
20.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
td(off)
Turn-off Delay Time
RG=3.3
tf
Fall Time
RD=20
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.4
Min.
Typ.
VGS=10V
Source-Drain Diode Symbol
Parameter 2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=18A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=18A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9965GEH/J 80
60
ID , Drain Current (A)
ID , Drain Current (A)
5.0V 4.5 V
60
10V 7 .0V
T C =150 o C
10V 7.0 V
T C =25 o C
40
V G = 3.0 V
5.0V 4.5 V 40
V G =3.0V
20
20
0
0 0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
8.0
Fig 1. Typical Output Characteristics
4.0
6.0
8.0
Fig 2. Typical Output Characteristics
2.0
70
I D =18A V G =10V
I D =12A Normalized RDS(ON)
T C =25 o C
50
RDS(ON) (m
)
2.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.6
1.2
30 0.8
0.4
10 2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
25
50.0
20
RDS(ON) (m )
IS(A)
40.0
15
V GS =4.5V
30.0
10
V GS =10V
T j =25 o C
o
T j =150 C
20.0 5
0
10.0 0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
0
10
20
30
40
50
I D , Drain Current (A)
Fig 6. On-Resistance vs. Drain Current 3
AP9965GEH/J f=1.0MHz
1000
C iss
I D =18A 12
V DS =20V V DS =25V V DS =30V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss C rss 4
10
0 0
4
8
12
16
1
20
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100us
ID (A)
10
1ms 10ms 100ms DC
1
o
T C =25 C Single Pulse 0
0.2
0.1
0.1 0.05
PDM 0.02
t T
0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
ID , Drain Current (A)
V DS =5V T j =25 o C
30
T j =150 o C
QG 4.5V QGS
20
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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