Transcript
AP9971AGM-HF Halogen-Free Product
Advanced Power Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-resistance
BVDSS
D2 D2 D1
Single Drive Requirement
RDS(ON)
D1
Surface Mount Package
G2
RoHS Compliant & Halogen-Free SO-8
60V
S1
50m
ID
5A
S2 G1
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D2
D1
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings Parameter
Symbol VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25 ID@TA=100
Rating
Units
60
V
+25
V
3
5
A
3
3.2
A
Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1
IDM
Pulsed Drain Current
30
A
PD@TA=25
Total Power Dissipation
2
W
Linear Derating Factor
0.016
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
W/
Thermal Data Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 3
62.5
Unit /W 1 201112293
AP9971AGM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
Min.
Typ.
60
-
-
VGS=10V, ID=5A
-
-
50
m
VGS=4.5V, ID=2.5A
-
-
60
m
VGS=0V, ID=250uA 2
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.8
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V
-
-
25
uA
VGS=+25V, VDS=0V
-
-
+100
nA
ID=5A
-
17.5
28
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.3
-
nC
VDS=30V
-
5.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=10V
-
18
-
ns
tf
Fall Time
RD=6
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
650
1040
pF
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
Source-Drain Diode Symbol
Parameter 2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.6A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
32
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135
/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9971AGM-HF 30
T A =25 o C
T A =150 o C
10V 7.0V 5.0V 4.5V
ID , Drain Current (A)
ID , Drain Current (A)
30
20
V G =4.0V 10
0
10V 7.0V 5.0V 4.5V
20
V G =4.0V
10
0 0
2
4
6
8
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
70
2.0
I D =5A
I D =5A
T A =25 o C Normalized RDS(ON)
V G =10V
)
60
RDSON (m
4
V DS , Drain-to-Source Voltage (V)
50
1.6
1.2
0.8
40
0.4
30 2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4
10
8 2
o
o
T j =25 C
VGS(th) (V)
T j =150 C IS (A)
6
1.6
4
1.2 2
0.8
0 0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9971AGM-HF 12
f=1.0MHz
10000
10
V DS =30V V DS =36V V DS =48V
8
1000
C iss C (pF)
VGS , Gate to Source Voltage (V)
I D =5A
6
100
4
C oss C rss
2
10
0 0
4
8
12
16
20
1
24
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us 1ms 10ms
1
100ms 0.1
1s o
T A =25 C Single Pulse
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
DUTY=0.5
0.2
0.1
0.1
0.05
PDM t
0.02
T 0.01
Duty factor = t/T Peak Tj = P DM x Rthja + Ta
0.01
Rthja = 135
/W
Single Pulse
DC
0.01
0.001 0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS 90%
QG 10V QGS
QGD
10% VGS td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
