Transcript
AP9972GS/P-HF Halogen-Free Product
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low Gate Charge
BVDSS
D
60V
RDS(ON)
Single Drive Requirement RoHS Compliant & Halogen-Free
ID
G
18m 60A
S
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9972GP) are available for low-profile applications. G
Absolute Maximum Ratings Parameter
Symbol
D
TO-220(P) S
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+25
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
60
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
38
A
1
IDM
Pulsed Drain Current
230
A
PD@TC=25
Total Power Dissipation
89
W
0.7
W/
Linear Derating Factor 3
Single Pulse Avalanche Energy
EAS
3
45
mJ
30
A
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data Symbol Rthj-c
Parameter
Value
Maximum Thermal Resistance, Junction-case 4
Units
1.4
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
1 201104186
AP9972GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/
Parameter
Test Conditions
Drain-Source Breakdown Voltage Tj
RDS(ON)
Min.
Typ.
60
-
-
-
0.06
-
V/
VGS=10V, ID=35A
-
-
18
m
VGS=4.5V, ID=25A
-
-
22
m
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25
Static Drain-Source On-Resistance2
, ID=1mA
Max. Units V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=35A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
250
uA
VGS=+25V, VDS=0V
-
-
+100
nA
ID=35A
-
32
51
nC
o
IGSS
Gate-Source Leakage 2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=30V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=35A
-
58
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=10V
-
45
-
ns
tf
Fall Time
RD=0.86
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
3170 5070
pF
Coss
Output Capacitance
VDS=25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Min.
Typ.
IS=35A, VGS=0V
-
-
1.2
V
Source-Drain Diode Symbol VSD
Parameter
Test Conditions
2
Forward On Voltage
2
Max. Units
trr
Reverse Recovery Time
IS=35A, VGS=0V,
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=30V , L=100uH , RG=25
, IAS=30A.
2
4.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP9972GS/P-HF 200
150
10V 7.0V
o
10V 7.0V
o
T C = 150 C
150
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
5.0V 100
4.5V
5.0V
100
4.5V
50
50
V G =3.0V
V G =3.0V
0
0 0
2
4
6
8
10
12
0
14
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
20
I D = 25 A T C =25 o C
I D =35A V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (m
)
18
16
1.2
1.0
0.8
0.6
14 2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
20
1.7
T j =150 o C
Normalized VGS(th) (V)
15
IS(A)
0
T j =25 o C
10
1.2
0.7
5
0.2
0 0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3
AP9972GS/P-HF f=1.0MHz 10
10000
8
C iss
V DS = 30 V V DS = 38 V V DS = 48 V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D = 35 A
1000
4
C oss C rss
2
100
0 0
20
40
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
100us
10
1ms 10ms 100ms DC
T C =25 o C Single Pulse
Duty factor=0.5
0.2
0.1
0.1 0.05
PDM
t 0.02
T 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse
1
0.01 0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V ID , Drain Current (A)
80
T j =25 o C
QG
T j =150 o C
4.5V 60
QGS
QGD
40
20
Charge
Q
0 0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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