Transcript
C792 100mm THYRIST AK OR PRESSP PRESSPA THYRISTOR 6000V / 2100A Type C792 thyristor is suitable for phase control applications such as for HVDC valves,static VAR compensators and synchronous motor drives. The silicon junction design utilizes a second generation pilot gate and a unique orientation of emitter shorts which promote the lateral expansion of conducting plasma resulting in lower spreading losses while achieving high dv/dt withstand. It is supplied in an industry accepted disc-type package,ready to mount using commercially available heat dissipators and mechanical clamping hardwar e.
REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE TJ= 0 to 115oC MODEL VD R M VR R M (volts) (volts) C792FP 6000 6000 C792ET 5900 5900 C792EN 5800 5800 C792ES 5700 5700 C792EM 5600 5600 C792EE 5500 5500
MAXIMUM ON-STATE CHARACTERISTIC Initial TJ=105 degC / 8ms pulse
On-state current , It (amperes) 30000
10000
MECHANICAL OUTLINE J
CL 1000 0
1
2
3
4
5
6
7
8
9
10
On-state Voltage , Vt (volts)
.01
CL
2 0° ±5 °
Zthj-case (degC/watt) A Ø B Ø
D
B Ø
.001
A F = 5.65 in (143.5 mm) B F =3.92 in (99.4 mm) D=1.45 in (36.8 mm)
Rthj-c=.005 degC/W add .002 for case to sink
.0001 0.001
0.01
0.1 1 Power On-time (seconds)
10
o1a:t305tau
ELECTRICAL CREEPAGE / STRIKE 1.6 / 1.0 in 40.6 / 25.4 mm CLAMPING FORCE (range) 17000-19000 lb.
175 GREAT VALLEY PKWY. MALVERN, PA 19355 USA 11/13/01
C792 / 6RT300 LIMITING CHARACTERISTICS AND RATINGS TEST MAXIMUM SYMBOL CONDITIONS VALUES
PARAMETER
UNIT S
Repetitive peak offstate and reverse voltage
VDRM VRRM
Tj=0 to +115oC
see table
V
Repetitive working crest voltage
VD W M VDRM
Tj=0 to 115oC
.8VD R M .8VR R M
V
Rep.off-state and reverse leakage current
ID W M IR R M
VD W M VR W M Tj=115oC
150 150
ma ma
On-state Voltage
VT M
IT=2000A tp=8.3ms Tj=115oC
1.90
V
Critical DC gate current/voltage to trigger on
IG T V GT
V D =12VDC Tj=25oC
150 3
ma V
Non-trigger gate current/voltage
IG D VGD
V D =.8VD R M TJ=115oC
8 _
ma V
Critical rate of rise of off-state
dv/dt
0.67VD R M Tj=115C
2000
V/us
Critical rate of of on-state
di/dtrep
0.67 VD R M see req’d gating
100
A/us
Peak recovery current
IRM(rec)
di/dt=2A/us Tj=115oC
118
A
Peak half-cycle non-repetitive surge current
IT S M
tp=8.3ms tp=10 ms
35 34
kA
Circuit commutated turn-off time
tq
di/dt=5A/us dv/dt=20V/us
600
us
GATE CIRCUIT REQUIREMENTS Open circuit voltage 40 - 50 V Short circuit current 3 A minimum Current risetime 0.5 us nominal Pulse duration 10-20 us
P2 / 11/13/01
C792 / 6RT300 FULL CYCLE AVERAGE POWER DISSIPATION Sine Wave-includes spread loss
PEAK RECOVERY CURRENT versus COMMUTATING di/dt
Avg.Power,Pavg (watts) 4500 Peak recovery Current (A)
180
1000
4000
conduction angle (degrees)
di
150
3500
R
dt
120
t
3000
2500
di
90
I
100
2000
dt
(REC)
RM(REC)
Tj = 115 C
60 1500 30 1000
500 Process Maximum
0 0
1
2
3
4
5
10 0.1
6
Specified Minimum
1
Peak Current , It (kA)
10
di/dt (A/us)
6RT300
FULL CYCLE AVERAGE POWER DISSIPATION 120-Deg Conduction-includes spread loss as a function of overlap angle ,U
INRUSH CURRENT (di/dt) RATING versus SWITCHING VOLTAGE
Avg.Power(watts)
Switching Voltage,Vd (kilovolts)
5000
6 U = 10 deg
4500
U = 20
U = 40
5
4000 3500
4 3000 2500
3
2000 2
1500 1000
1
Repetition Rate
500
50 / 60 Hz ***
0
single shot
0 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
Peak Current ,It(kA) 6RT300
*** Limit repetitive snubber discharge to 100A
50
100
150
200
250
300
350
di/dt in A/us T300
P3 11/13/01
C792 / 6RT300 Gate Characteristics and Gate Supply Requirements Instantaneous Voltage (V) 50
• THYRISTOR GATE IMPEDANCE Enhanced by fast rising gate voltage,increasing anode bias and junction temperature.It is at a minimum for dc current, zero anode bias and low temperature.
dynamic @ 105 C 40
• GATE SUPPLY Prefer 50V/10 ohm for supporting the di/dt rating and life expectancy. The short circuit current risetime should be nominally 0.5us and the duration longer than the expected delay time for all magnitudes of anode bias. Practically 10-30us is recommended followed by a back porch of 750ma if needed to sustain conduction.
load line
30
• MINIMUM ACCEPTABLE GATE CURRENT The intersection of the load line and gate impedance characteristic indicates the minimum value of actual current needed during the delay time interval to support di/dt.A different load line meeting this criterion may be used.
20
10
• MAXIMUM GATE RATINGS Peak gate power,Pgm(100us) = 300 W Average gate power,Pg(av) = 50W Peak gate current,Igfm = 25 A Peak reverse voltage,Vgrm = 25 V
static (dc) @ 25 C
0 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Current (A) T302
Non-Repetitive Surge Current and I2t for Fusing Itsm (kA)
I2t Mamp2sec
100000
10
Itsm
10000
I2t
1 10
1 Half Sine Pulse Duration, tp (ms) 01l:C792ITSM
P4 11/13/01
