Transcript
MPS-080917N-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com
Email:
[email protected]
Features Very Low Noise 0.8 dB Typ.
7.5 Volt Bias
High +36 dBm Typ. IP3
26% High Power Added Effeciency
13.5 dB Typical Gain
The MPS-080917N-82 is a low noise , high dynamic range amplifier designed for ultralinear GSM, NMT-900 and ETACS receiver applications. The circuit is matched to 50 ohm and employs a single stage GaAs FET with internal matching to provide exceptional noise figure, 0.8 dB combined with extremely high IP3, +36 dBm. Typical applications are base station receivers, Tower mounted LNA’s, smart antenna systems, picocell repeaters and receiver multicouplers.
Specifications
Electrical at 25 C, Vdd= 7.5 V, Zo= 50 Freq SSG P1dB IP3 NF VSWR GOF GOT dd PAE
Parameter
Min.
Frequency Range 870 Small Signal Gain 12 P out at 1 dB Compression Third-order Intercept +33 Noise Figure Input VSWR Gain Variation over Freq. Gain Variation over Temp. DC Current Power Added Efficiency
Typical
Max
13.5 +22.0 +36.0 0.8 2.0:1 +/-0.2 - .015 180 26
925 MHz dB dBm dBm 1.0 dB 2.5:1 +/-0.5 dB dB/ C 250 mA %
Gain vs. Frequency
Unit 18 Gain (dB)
Symbol
16 14 12 850
870
890 910 930 Frequency (MHz)
950
Noise Figure vs. Frequency
Noise Figure (dB)
2.0
Absolute Maximum Ratings Maximum Bias Voltage Maximum Continuous RF Input Power Maximum Peak Input Power Maximum Case Operating Temperature Maximum Storage Temperature
1.5
1.0
8.0 V 950 mW 1400 mW +85 C -65 C to +150 C
.5 850
870
890 910 930 Frequency (MHz)
950
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MPS-080917N-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com
Email:
[email protected]
Retur n Loss vs eturn vs.. F Frr equenc equencyy
Retur n Loss vs eturn vs.. F Frr equenc equencyy INPUT
0
-5 Return Loss (dB)
-5 Return Loss (dB)
OUTPUT
0
-10 -15 -20
-10 -15 -20 -25
-25
-30
-30
850
870
890
910
930
950
850
870
890
910
950
.145 MAX
Outline Dia Diagg r ams .270
.028
.020 TYP.
LEAD 10 .020 TYP.
.050 TYP.
Pin 1 2 3 4 5 6 7 8 9 10 Case
LEAD 1 .200 TYP.
.270 .250 LEAD 5
.050 TYP. .250 .430
.010 MAX TYP.
930
Frequency (MHz)
Frequency (MHz)
LEAD 6
Connection N/C N/C RF Input NC N/C N/C N/C RF Output, Vdd N/C N/C Ground
GND.
.250 REF. .040 TYP. .008 TYP. .020 TYP.
Application Circuit C2 V
dd
CR1 RF IN
L1
080917N
C1
C1
C1 C2 L1 CR1
100 pF .22 uF 160 nH 7.0 V
RF OUT
Chip Capacitor Capacitor Printer or Wound Coil Zener Diode 50 Microstrip Line
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
