Transcript
SPA2118Z
SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias
850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS
Package: Exposed Pad SOIC-8
Product Description
Features
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
VC1
GaAs MESFET Active Bias
VBIAS
InGaP HBT SiGe BiCMOS Si BiCMOS
GaAs pHEMT
VPC2
Si CMOS Si BJT GaN HEMT
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RF MEMS
Parameter
Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power
Min.
Specification Typ.
810
Small Signal Gain 31.5 Input VSWR Output Third Order Intercept Point Noise Figure Device Current 360 Device Voltage 4.75 Thermal Resistance (Junction - Lead) Test Conditions: Z0 =50 Temp=25°C VCC =5.0V
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RFOUT/ VC2
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RFIN
SiGe HBT
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GaAs HBT
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High Linearity Performance +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP +47dBm Typ. OIP3 High Gain: 33dB Typ. On-Chip Active Bias Control Patented high Reliability GaAs HBT Technology Surface-Mountable Plastic Package
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Optimum Technology Matching® Applied
900 29.0 -55.0 33.0 1.5:1 47.0 5.0 400 5.0 31
Applications
Max. 960
Unit
-52.0
MHz dBm dBc
34.5
dB
425 5.25
IS-95 CDMA Systems Multi-Carrier Applications AMPS, ISM Applications
dBm dB mA V °C/W
Condition
IS-95 at 880MHz, ±885KHz offset, POUT =20.7dBm 880MHz Power out per tone=+14dBm IBIAS =10mA, IC1 =70mA, IC2 =320mA TL =85°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS120502
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at or .
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SPA2118Z Absolute Maximum Ratings Unit
150
mA
Max Supply Current (IC2) at VCC typ.
750
mA
Max Device Voltage (VCC) at ICC typ.
6.0
V
Max RF Input Power
10
dBm
Max Junction Temp (TJ)
+160
°C
Max Storage Temp
+150
°C
3
MSL
Moisture Sensitivity Level
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l
ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.
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Parameter
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Rating
Max Supply Current (IC1) at VCC typ.
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850MHz to 950MHz Application Circuit Data, ICC =400mA, VCC =5V, IS-95, 9 Channels Forward 880 MHz Adjacent Channel Power vs. Channel Output Power -40.0 -45.0
-40C 25C 85C
-50.0
-60.0 -65.0 -70.0 -75.0 -80.0
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dBc
-55.0
FO R
-85.0
12 13
14
15 16 17 18 Power 19 20(dBm) 21 22 Channel Output
23 24
25
dBm
IS-95 CDMA at 880 MHz
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11
T=+25C
+24 dBm +20 dBm
+10 dBm +16 dBm
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical or . support, contact RFMD at
DS120502
SPA2118Z 850MHz to 950MHz Application Circuit Data, ICC =400mA, VCC =5V Input/Output Return Loss, Isolation vs Frequency
0
Gain vs. Frequency
40
T=+25°C
S22
-10
-40C 25C 85C
36 S11
dB
dB
-20
32
-30
28
-40
S
S12
24 0.8
0.85
0.9
0.95
IG N
-50
0.8
1
P1dB vs Frequency
0.9
0.95
1
GHz
Device Current vs. Source Voltage
36
600
30 28 26 0.8
0.85
0.9
0.95
1
25C -40C 85C
400 300 200 100
0 0
1
2
3
4
5
6
Vcc (V)
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GHz
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32
500
Device Current (mA)
-40C 25C 85C
34 dBm
0.85
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GHz
DS120502
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical or . support, contact RFMD at
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SPA2118Z Pin 1
Function VC1
Description
2 3 4
VBIAS RF IN VPC2
5, 6, 7, 8 EPAD
RF OUT/VC2
Bias control pin for the active bias network for the second stage. The recommended configuration is shown in the application schematic. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin a DC-blocking capacitor should be used in most applications. (See application schematic.) The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance.
GND
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
Supply voltage for the first stage transistor. The configuration as shown on the application schematic is required for optimum RF performance. Bias control pin for the active bias network. Recommended configuration is shown in the application schematic.
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Simplified Device Schematic
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RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the application shcematic.
2
4
ACTIVE BIAS NETWORK
ACTIVE BIAS NETWORK
5-8
Parameter (
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3
1
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2
Recommended Land Pattern
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Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. 0.150 [3.81]
Plated-Thru Holes (0.015" Dia, 0.030" Pitch)
0.140 [3.56]
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Machine Screws
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0.300 [7.62]
0.080 [2.03] 0.050 [1.27]
0.020 [0.51]
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical or . support, contact RFMD at
DS120502
SPA2118Z Package Drawing
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Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances.
DS120502
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical or . support, contact RFMD at
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SPA2118Z 850MHz to 950MHz Application Schematic Vcc 10uF Tantalum External Connection
82pF
IC2
IC1
6.8K
IBIAS
39pF
1
8
2
7
3
6
4
5
33 nH
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2.2nH
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Z=63
, 9.5°
1000pF
Z=50
, 15.1°
100pF
6.8pF
15pF
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1200pF 330 Ohm Vpc
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850MHz to 950MHz Evaluation Board Layout and Bill of Materials Vcc
C3
C4
FO R
C2
L1
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C1
C5
R1
L2
Ref. Des.
Value
Part Number
C1
15pF, 5%
Rohm MCH18 series
C2
82pF, 5%
Rohm MCH18 series
C3
10uF, 10%
AVX TAJB106K020R
C4
1000pF, 5%
Rohm MCH18 series
C5
39pF, 5%
Rohm MCH18 series
C6
1200pF, 5%
Rohm MCH18 series
C7
6.8pF, ±0.5pF
Rohm MCH18 series
C8
100pF, 5%
Rohm MCH18 series
2012
C8 C6
C7
R2
Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board
L1
2.2nH, ±0.3nH
Toko LL1608-FS series
L2
33nH, 5%
Coilcraft 1008HQ series
R1
6.8K Ohm, 5%
Rohm MCR03 series
R2
330 Ohm, 5%
Rohm MCR03 series
Vpc
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical or . support, contact RFMD at
DS120502
SPA2118Z
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Branding Diagram
Ordering Information Description
SPA2118Z
7” Reel with 500 pieces
SPA2118ZSQ
Sample bag with 25 pieces
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Ordering Code
7” Reel with 100 pieces
SPA2118Z-EVB1
900MHz PCBA
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FO R
SPA2118ZSR
DS120502
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical or . support, contact RFMD at
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