Transcript
DPF240X400NA
HiPerFRED
VRRM
=
400 V
I FAV
= 2x 120 A
t rr
=
30 ns
High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number
DPF240X400NA
Backside: isolated
2
1
3
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS)
● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling
Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160217b
DPF240X400NA Ratings
Fast Diode Conditions
Symbol VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
400
TVJ = 25°C
10
µA
VR = 400 V
TVJ = 150°C
0.5
mA
I F = 120 A
TVJ = 25°C
1.25
V
1.54
V
1.06
V
TVJ = 150 °C
I F = 120 A I F = 240 A average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
V
VR = 400 V
I F = 240 A
I FAV
max. Unit 400 V
TC = 70 °C rectangular
1.42
V
T VJ = 150 °C
120
A
TVJ = 150 °C
0.71
V
2.9
mΩ
d = 0.5
for power loss calculation only
0.5 K/W K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 200 V f = 1 MHz
TVJ = 25°C
187
pF
I RM
max. reverse recovery current
TVJ = 25 °C
7
A
I F = 120 A; V = 240 V
TVJ = 125 °C
18
A
t rr
reverse recovery time
-d F /dt = 200 A/µs
TVJ = 25 °C
30
ns
TVJ = 125 °C
140
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
0.10 TC = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
250
W
1.20
kA
20160217b
DPF240X400NA Package
Ratings
SOT-227B (minibloc)
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max. 150
Unit A
-40
150
°C
-40
125
°C
150
°C
30
Weight
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
d Spp/App d Spb/Apb VISOL
Product Marking
8.6
Logo
D P F 240 X 400 NA
XXXXX ® Zyyww abcd
Assembly Line DateCode
Ordering Standard
50/60 Hz, RMS; IISOL ≤ 1 mA
3.2
mm
6.8
mm
3000
V
2500
V
Part description
Part No.
= = = = = = =
Diode HiPerFRED ultra fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc)
Assembly Code
Ordering Number DPF240X400NA
Equivalent Circuits for Simulation V0
10.5
t = 1 second
isolation voltage
t = 1 minute
I
terminal to terminal terminal to backside
creepage distance on surface | striking distance through air
R0
Marking on Product DPF240X400NA
* on die level
Delivery Mode Tube
Code No. 499554
T VJ = 150 °C
Fast Diode
V 0 max
threshold voltage
0.71
V
R0 max
slope resistance *
1.01
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Quantity 10
Data according to IEC 60747and per semiconductor unless otherwise specified
20160217b
DPF240X400NA Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160217b
DPF240X400NA Fast Diode 3.0
45 40
200
2.5
IF = 240 A 120 A 30 A
2.0
150
30
IRM 25
Qrr
IF
1.5
100 TVJ = 125°C 150°C
[A]
[µC]
[A]
1.0
50
20 15
TVJ = 125°C VR = 240 V
0.5
25°C
0.4
0.8
5
1.2
1.6
0 0
2.0
200
400
600
0
-diF /dt [A/µs] Fig. 2 Typ. reverse recovery charge Qrr vs. -diF /dt
VF [V] Fig. 1 Forward current IF vs. VF 1.4 1.2
2800
200
1.0
TVJ = 125°C VR = 240 V
0.8
160
TVJ = 125°C VR = 240 V IF = 120 A
28 VFR 24
VFR 20
[ns]
140
0.4
600
2000
[ns] IRM
400
tfr
trr Kf
tfr
2400
180
200
-diF /dt [A/µs] Fig. 3 Typ. reverse recovery current IRM vs. -diF /dt
220
0.6
TVJ = 125°C VR = 240 V
10
0.0 0.0
IF = 240 A 120 A 30 A
35
[V]
1600
16
1200
12
120
0.2
IF = 240 A 120 A 30 A
100
Qrr
0.0
80 0
40
80
120
160
800 0
Fig. 4 Typ. dynamic parameters Qrr, IRM vs. TVJ
600
0.6
120
0.5
100
8 0
200
400
600
-diF /dt [A/µs] Fig. 6 Typ. forward recovery voltage VFR & tfr vs. diF /dt
Fig. 5 Typ. reverse recovery time trr vs. -diF /dt
140
0.4
IF = 240 A 80
400
-diF /dt [A/µs]
TVJ [°C]
ZthJC
120 A 30 A
Erec
200
0.3
60
[K/W]
[µJ]
0.2
40
0.1
TVJ = 125°C VR = 240 V
20 0 0
200
400
600
0.0 10 0
-diF /dt [A/µs] Fig. 7 Typ. recovery energy Erec vs. -diF /dt IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
10 1
102
10 3
10 4
t [ms] Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20160217b
