Transcript
Ordering number : ENA0869A
2SK4177 N-Channel Power MOSFET
http://onsemi.com
1500V, 2A, 13Ω, TO-263-2L Features • •
ON-resistance RDS(on)=10Ω(typ.) 10V drive
•
Input capacitance Ciss=380pF (typ.)
Specifications Absolute Maximum Ratings at Ta=25°C Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS VGSS
Gate-to-Source Voltage Drain Current (DC)
Unit 1500
V
±20
V
Allowable Power Dissipation
ID IDP PD
80
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS IAV
41
mJ
2
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1% Tc=25°C
2
A
4
A
Note : *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ) 7535-001
• Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800 pcs./reel 2SK4177-DL-1E 4.5
4
8.0
Packing Type: DL
Marking
1.75
1.2
10.0
1.3
5.3
0.9
7.9
9.2 13.4
1.4
3.0
K4177 LOT No.
DL
0.254 2 3 1.27 0.8
0.5
2.54
2, 4
0 to 0.25
2.4
2.54
Electrical Connection
1.35
1
Semiconductor Components Industries, LLC, 2013 July, 2013
1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L
1
3
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7
2SK4177 Electrical Characteristics at Ta=25°C Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
Conditions
min
V(BR)DSS IDSS
ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA
2.5
Forward Transfer Admittance
IGSS VGS(off) | yfs |
VDS=20V, ID=1A
0.7
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on) tr
Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage
Rise Time Turn-OFF Delay Time Fall Time
td(off) tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
μA
±10
μA
3.5 1.4
See Fig.2
13
pF
70
pF
40
pF
12
ns
37
ns ns
59
ns
37.5
nC
2.7
nC
S
1.2
V
Fig.2 Switching Time Test Circuit VDD=200V
VIN
ID=1A RL=190Ω
VIN D
PW≤10μs D.C.≤1%
2SK4177
nC
0.88
10V 0V
L
Ω
380
20 IS=2A, VGS=0V
V S
152
VDS=200V, VGS=10V, ID=2A
G
50Ω
V 100
10
≥50Ω RG
10V 0V
Unit
max
1500
VDS=30V, f=1MHz
Fig.1 Unclamped Inductive Switching Test Circuit D
typ
VDD
VOUT
G
2SK4177 P.G
50Ω
S
Ordering Information Device 2SK4177-DL-1E
Package
Shipping
memo
TO-263-2L
800pcs./reel
Pb Free
No. A0869-2/7
2SK4177 ID -- VDS
4.0
VDS=20V pulse
8V
2.5
6V 2.0 1.5
5V
1.0
Tc= --25°C
2.5
10V
3.0
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ID -- VGS
3.0
Tc=25°C pulse
2.0
25°C 1.5
75°C 1.0
0.5 0.5
VGS=4V 0
0 0
5
10
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
50
0
4
6
8
10
12
14
16
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
ID=1A VGS=10V
Tc=75°C 25°C
10
--25°C 5
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
2
°C 25 1.0
5°C --2 = °C Tc 75
3 2
0.1
--25
0
25
5
7
2
0.1
3
5
7
Drain Current, ID -- A
2
1.0
150
IT07133
3 2 0.1 7 5
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2 IT07135
Ciss, Coss, Crss -- VDS
5
f=1MHz 3 2
Ciss, Coss, Crss -- pF
td(off)
2
100
tf
7 5 3
tr
2
1000 7 5
Ciss
3 2
Co ss
100 7 5
Crss
3 2
td(on) 10 0.1
125
1.0 7 5
IT07134
VDD=200V VGS=10V
3
100
3 2
0.01 0.2
3
SW Time -- ID
5
75
VGS=0V
3 2 3
50
IS -- VSD
10 7 5
3
5
5
Case Temperature, Tc -- °C
VDS=20V
7
10
IT07132
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
20
yfs -- ID
5
Switching Time, SW Time -- ns
18
15
0 --50
0 0
20
75°C 25°C --25°C
15
25
Tc=
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
20
20
IT07131
RDS(on) -- Tc
30
ID=1A 25
18
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
30
2
IT07130
10 2
3
5
7
1.0
Drain Current, ID -- A
2
3
IT09037
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT09038
No. A0869-3/7
2SK4177 VGS -- Qg
10 9
7 6 5 4 3 2
0 10
0
20
30
Total Gate Charge, Qg -- nC
0μ
10 DC
3 2
40
20
op
s
0.1 7 5
ati
on
Tc=25°C Single pulse 2 3
5 7 10
2 3
5 7 100
2 3
5 7 1k
Drain-to-Source Voltage, VDS -- V
Avalanche Energy derating factor -- %
60
s 1m
m
er
2 3 IT16905
EAS -- Ta
120
80
10
0m s s
Operation in this area is limited by RDS(on).
IT07138
PD -- Tc
100
μs
10
ID=2A
0.01 1.0
40
10
IDP=4A(PW≤10μs)
1.0 7 5
3 2
1
Allowable Power Dissipation, PD -- W
ASO
3 2
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
10 7 5
VDS=200V ID=2A
100
80
60
40
20
0
0 0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12898
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175 IT10478
No. A0869-4/7
2SK4177 Taping Specification
2SK4177-DL-1E
No. A0869-5/7
2SK4177 Outline Drawing 2SK4177-DL-1E
Land Pattern Example Mass (g) Unit 1.5 mm * For reference
Unit: mm
No. A0869-6/7
2SK4177
Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A0869-7/7
