Transcript
ESDA6V8BLF ESDA6V8BLF 2-Line, Uni-directional, Low-Capacitance,
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Transient Voltage Suppressors
Descriptions The ESDA6V8BLF is a bi-directional transient voltage suppressors (TVS) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). It is
SOT-23
designed to replace multilayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. The ESDA6V8BLF is based on solid-state silicon technology and offer unique electrical characteristics like lower clamping voltage and no device degrading compared to MLV. The ESDA6V8BLF is past ESD transient voltage up to ±8KV (contact) according to IEC61000-4-2 and will withstand peak current up to 3.5A for 8/20us pulse to
Circuit Diagram
meet the IEC61000-4-5. The ESDA6V8BLF is available in SOT-23-3L package.
GND
Standard products are Pb-free and Halogen-free.
3
Features
BWW
Working voltage: ±5.0V Max
Transient protection for each line according to IEC61000-4-2 (ESD): ±8kV (contact discharge)
1
2
I/O1
I/O2
±15kV (air discharge) IEC61000-4-4 (EFT):
SOT-23
40A (5/50ns)
IEC61000-4-5 (surge): 3.5A (8/20μs)
Low leakage current
Small package
B
= Device code
WW = Date code Marking & Pin configuration
Applications
Cell phone
Notebook
STB
Digital camera
Other electronics equipments
Will Semiconductor Ltd.
Order information Device ESDA6V8BLF-3/TR
1
Package
Shipping
SOT-23
3000/Tape&Reel
Revision 1.5, 2013/12/19
ESDA6V8BLF Absolute maximum ratings Parameter
Symbol
Rating
Unit
Peak pulse power (tp=8/20us)
Ppk
38
W
Peak pulse current (tp=8/20us)
Ipp
3.5
A
ESD voltage IEC61000-4-2 air
±15
VESD
ESD voltage IEC61000-4-2 contact Junction temperature
125
o
-40~85
o
260
o
-55~150
o
TJ
Operating temperature
TOP
Lead temperature
TL
Storage temperature
kV
±8
TSTG
C C C C
Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter
Symbol
Reveres maximum working voltage
VRWM
Reveres leakage current
IR
Condition
Min.
Typ.
VRWM=5V
Unit
±5.0
V
1.0
uA
Reveres breakdown voltage
VBR12
IT=1mA
6.5
7.7
8.1
V
Forward voltage
VBR21
IF=1mA
6.5
7.8
8.1
V
Clamping voltage
VC
Ipp=1A tp=8/20us
8
V
Ipp=3.5A tp=8/20us
11
V
5.0
10
pF
2.5
5
pF
F=1MHz, VR=0V Junction capacitance
Any I/O pin to Gnd
CJ
F=1MHz, VR=0V Between I/O pins
110 100 90 80 70 60 50 40 30 20 10 0
100 90
Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s
Peak Pulse Current (%)
Peak pulse current (%)
Max.
T2
0
5
T T1
10
15 20 25 Time (s)
30
35
40
30ns tr=0.7~1ns
8/20us waveform Will Semiconductor Ltd.
10 60ns
IEC61000-4-2 waveform 2
Revision 1.5, 2013/12/19
t
ESDA6V8BLF Typical characteristics (Ta=25 C, unless otherwise noted) o
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C - Junction capacitance (pF)
VC - Clamping voltage (V)
Pulse waveform: tp=8/20us
12
8
5.0
Fsignal =1MHz
4.5
Vsignal =50mVrms
4.0 3.5 3.0 2.5
4
0
1
2
3
4
0
1
Ipp - Peak pulse current (A)
2
3
4
5
VR - Reverse voltage (V)
Clamping voltage vs. Peak pulse current
Capacitance vs. Reveres voltage
1000
100
% of Rated power
Peak Pulse Power (W)
100
10
80 60 40 20
1
0 1
10 100 Pulse Duration(us)
1000
0
25
50
75
100
125
TA - Ambient temperature ( C)
Non-Repetitive Peak Pulse Power vs. Pulse time
Power derating vs. Temperature
ESD clamping voltage
ESD clamping voltage
(IEC61000-4-2 +8kV contact)
(IEC61000-4-2 -8kV contact)
Will Semiconductor Ltd.
150
o
3
Revision 1.5, 2013/12/19
ESDA6V8BLF Package outline dimensions SOT-23
Recommend PCB Layout (Unit: mm)
Symbol
Dimensions in millimeter
Dimensions In Inches
Min.
Max.
Min.
Max.
A
0.900
1.150
0.035
0.045
A1
0.000
0.100
0.000
0.004
A2
0.900
1.050
0.035
0.041
b
0.300
0.500
0.012
0.020
c
0.080
0.150
0.003
0.006
D
2.800
3.000
0.110
0.118
E
1.200
1.400
0.047
0.055
E1
2.250
2.550
0.089
0.100
e e1
0.950TYP 1.800
L
0.037TYP 2.000
0.071
0.500REF
0.079 0.022REF
L1
0.300
0.500
0.012
0.020
θ
0°
8°
0°
8°
Will Semiconductor Ltd.
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Revision 1.5, 2013/12/19
