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FGH30S150P 1500 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 1.85 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven C E C G G COLLECTOR (FLANGE) Absolute Maximum Ratings T Symbol = 25°C unless otherwise noted Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC C E Ratings Unit 1500 V ±25 V Collector Current @ TC = 25oC 60 A Collector Current @ TC = 100oC 30 A 90 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current @ TC = 25oC 60 A IF Diode Continuous Forward Current @ TC = 100oC 30 A 500 W PD TJ Maximum Power Dissipation Maximum Power Dissipation o @ TC = 25 C @ TC = 100oC 250 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +175 o -55 to +175 o C C oC 300 Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max Typ. Max. -- 0.3 o 40 o -- Unit C/W C/W Notes: 1: Limited by Tjmax ©2015 Fairchild Semiconductor Corporation FGH30S150P Rev. 1.1 1 www.fairchildsemi.com FGH30S150P — 1500 V, 30 A Shorted-anode IGBT March 2016 Device Marking Device Package Reel Size Tape Width Quantity FGH30S150P FGH30S150P TO-247 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1500 - - V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA - 1.5 - V/oC ICES Collector Cut-Off Current VCE = 1500, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA IC = 30mA, VCE = VGE On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.5 6.0 7.5 V IC = 30A, VGE = 15V TC = 25oC - 1.85 2.4 V IC = 30A, VGE = 15V, TC = 125oC - 2.06 - V IC = 30A, VGE = 15V, TC = 175oC - 2.15 - V IF = 30A, TC = 25oC - 1.61 2.2 V o - 1.96 - V - 3310 - pF - 70 - pF - 55 - pF IF = 30A, TC = 175 C Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characcteristics td(on) Turn-On Delay Time - 32 - ns tr Rise Time - 292 - ns td(off) Turn-Off Delay Time - 492 - ns tf Fall Time - 214 - ns Eon Turn-On Switching Loss - 1.16 - mJ Eoff Turn-Off Switching Loss - 0.9 - mJ VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC Ets Total Switching Loss - 2.06 - mJ td(on) Turn-On Delay Time - 36 - ns tr Rise Time - 336 - ns td(off) Turn-Off Delay Time - 560 - ns tf Fall Time - 520 - ns Eon Turn-On Switching Loss - 1.39 - mJ Eoff Turn-Off Switching Loss - 1.86 - mJ Ets Total Switching Loss - 3.25 - mJ Qg Total Gate Charge - 369 - nC Qge Gate to Emitter Charge - 23.5 - nC Qgc Gate to Collector Charge - 199 - nC ©2015 Fairchild Semiconductor Corporation FGH30S150P Rev. 1.1 VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 30A, VGE = 15V 2 www.fairchildsemi.com FGH30S150P — 1500 V, 30 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics o Collector Current, IC [A] TC = 25 C 160 Figure 2. Typical Output Characteristics 200 20V VGE = 17V 12V 80 10V 9V 40 2 4 6 Collector-Emitter Voltage, VCE [V] 120 12V 80 10V 9V 40 8V 7V 0 8 0 Figure 3. Typical Saturation Voltage Characteritics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 200 200 Common Emitter VCE = 20V Common Emitter VGE = 15V o 160 Collector Current, IC [A] Collector Current, IC [A] 17V 15V 160 8V 7V 0 20V TC = 175 C 120 TC = 25 C o TC = 175 C 120 80 160 TC = 25oC o TC = 175 C 120 80 40 40 0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 9 12 15 Gate-Emitter Voltage,VGE [V] 20 3 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 60A 30A 2 IC = 15A 1 25 50 75 100 125 150 175 o Collector-Emitter Case Temperature, TC [ C] ©2015 Fairchild Semiconductor Corporation FGH30S150P Rev. 1.1 3 18 Figure 6. Saturation Voltage vs. VGE 4 Collector-Emitter Voltage, VCE [V] o 15V Collector Current, IC [A] 200 o TC = 25 C 16 12 30A 8 IC = 15A 60A 4 0 3 Common Emitter 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH30S150P — 1500 V, 30 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 10000 20 Common Emitter Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 30A 8 IC = 15A 60A 1000 Coes 100 o TC = 25 C 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 20 Figure 9. Gate Charge Characteristics 200 100 Common Emitter o DC TC = 25 C VCC = 200V Collector Current, Ic [A] 400V 12 9 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] Cres Common Emitter VGE = 0V, f = 1MHz 4 600V 6 3 50µs 100µs 10 1ms 10 ms 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 0 0 80 160 240 Gate Charge, Qg [nC] 320 1 400 Figure 11. Turn-On Characteristics vs Gate Resistance 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 10000 Common Emitter VCC = 600V, VGE = 15V IC = 30A tr Switching Time [ns] Switching Time [ns] o 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 C o td(off) TC = 175 C 1000 tf o TC = 25 C o TC = 175 C 10 10 20 30 40 50 Gate Resistance, RG [Ω] ©2015 Fairchild Semiconductor Corporation FGH30S150P Rev. 1.1 60 100 10 70 4 20 30 40 50 Gate Resistance, RG [Ω] 60 70 www.fairchildsemi.com FGH30S150P — 1500 V, 30 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics VS. Collector Current Figure 14.Turn-off Characteristics VS. Collector Current 4000 1000 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C tf o Switching Time [ns] TC = 175 C tr Switching Time [ns] 1000 100 td(on) td(off) Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C o TC = 175 C 10 10 20 30 40 Collector Current, IC [A] 50 50 10 60 Figure 15. Switching Loss VS. Gate Resistance 20 30 40 50 Collector Current, IC [A] 60 Figure 16. Switching Loss VS. Collector Current 5 10 Common Emitter VCC = 600V, VGE = 15V IC = 30A Eon Switching Loss [mJ] Switching Loss [mJ] o TC = 25 C o TC = 175 C Eon Eoff 1 1 Eoff Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 175 C 0.5 10 20 30 40 50 Gate Resistance, RG [Ω] 0.05 10 60 30 40 50 60 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 100 60 o Forward Current, IF [A] Collector Current, IC [A] 20 10 Safe Operating Area o 0.5 10 100 1000 Collector-Emitter Voltage, VCE [V] FGH30S150P Rev. 1.1 o TC = 25 C TC = 175 C 1 ©2015 Fairchild Semiconductor Corporation o TJ = 175 C 10 1 o VGE = 15V, TC = 175 C 1 TJ = 25 C 0 5 1 2 Forward Voltage, VF [V] 3 www.fairchildsemi.com FGH30S150P — 1500 V, 30 A Shorted-anode IGBT Typical Performance Characteristics FGH30S150P — 1500 V, 30 A Shorted-anode IGBT Figure 19.. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.4 0.5 0.1 0.2 0.1 0.05 PDM 0.02 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 0.01 single pulse 7E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] ©2015 Fairchild Semiconductor Corporation FGH30S150P Rev. 1.1 6 www.fairchildsemi.com 4.82 E 4.58 15.87 E 15.37 A 3.65 E 3.51 0.254 M 12.81 E 6.85 6.61 B A M 5.58 E 5.34 5.20 4.96 B 3.65 3.51 1.35 0.51 13.08 MIN 20.82 E 20.32 3 3.93 E 3.69 16.25 E 15.75 1.60 1 3 2.66 2.42 5.56 0.71 0.51 2.66 2.29 1.35 1.17 11.12 0.254 M B A M NOTES: UNLESS OTHERWISE SPECIFIED. A. PACKAGE REFERENCE: JEDEC TO-247, ISSUE E, VARIATION AB, DATED JUNE, 2004. B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5 - 1994 E DOES NOT COMPLY JEDEC STANDARD VALUE F. 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