F5041

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http://www.fujisemi.com F5041 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching Connection SOP-8 Applications • Solenoid driver • Lamp driver • Replacements for fuse and relay Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C, unless otherwise specified) Description Drain-source voltage Gate-source voltage Gate-source minus voltage Continuous drain current Maximum power dissipation Operating junction temperature Storage temperature range Symbol VDSS VGSS -VGSS ID PD Tj Tstg Single pulse inductive load switch-off energy dissipation ECL Characteristics 40 7 1.5 1 1.5 150 -55 ~ 150 Unit V V V A W °C °C 25 mJ Remarks DC DC RG=100Ω – * – – Tj =150°C, I D =0.5A Single pulse, dv/dt≤10V/μs Note * : Surface mounted on 1000mm2PCB (FR-4), 2ch on simultaneously Electrical characteristics (at Tc=25°C unless otherwise specified) Description Drain-source clamp voltage Gate threshold voltage Operation gate voltage (protection circuit operates) Symbol VDSS VGS (th) VGS (p) Zero gate voltage drain current I DSS(-VGS) Zero gate minus voltage drain current I DSS I GS (n) I GS (un) R DS (on) t on t off Ttrip I OC Gate-sourse leakage current Drain-source on-state resistance Turn-on time Turn-off time Over-temperature protection Short circuit protection Conditions I D =1mA, VGS=0V I D =10mA, VDS=13V – VDS=16V, VGS=0~1.5V VDS=30V, VGS=0~1.5V VDS=16V, VGS=-1.5V, RG=100Ω VDS=30V, VGS=-1.5V, RG=100Ω VGS=5V** VGS=5V, Tj>150˚C*** ID=0.5A, VGS=5V VDS=13V, I D =0.5A, VGS=5V VGS=5V VGS=5V min. 40 1.53 2.8 – – – – – – – – – 150 1.5 typ. – – – – – – – – – – – – – – max. 60 2.8 7.0 15 35 12 30 250 300 600 50 50 – – Unit V V V μA μA μA μA μA μA mΩ μS μS ˚C A Note ** : Under normal operation Note *** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection) Electrical characteristics (at Tc=-40~105°C unless otherwise specified) Description Drain-source clamp voltage Gate threshold voltage Operation gate voltage (protection circuit operates) Symbol VDSS VGS (th) VGS (p) Zero gate voltage drain current I DSS(-VGS) Zero gate minus voltage drain current I DSS I GS (n) I GS (un) R DS (on) t on t off I OC Gate-sourse leakage current Drain-source on-state resistance Turn-on time Turn-off time Short circuit protection Conditions I D =1mA, VGS=0V I D =10mA, VDS=13V – VDS=16V, VGS=0~1.5V VDS=30V, VGS=0~1.5V VDS=16V, VGS=-1.5V, RG=100Ω VDS=30V, VGS=-1.5V, RG=100Ω VGS=5V** VGS=5V, Tj>150˚C*** ID=0.5A, VGS=5V VDS=13V, I D =0.5A, VGS=5V VGS=5V min. 38 1.5 3.0 typ. 0.7 – – – – – – – – – – – – – min. typ. – – – – – – – – – – – max. 62 3.0 6.8 25 50 20 50 300 350 920 70 50 – Unit V V V μA μA μA μA μA μA mΩ μs μs A max. 83 Unit °C/W Note ** : Under normal operation Note *** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection) Thermal resistance Description Thermal resistance Symbol Rth (j-a) Test conditions Junction-ambient* Note * : Surface mounted on 1000mm PCB (FR-4), 2ch on simultaneously 2 1 F5041 FUJI Intelligent Power MOSFET http://www.fujisemi.com Timing chart Circuit block diagram 2 F5041 FUJI Intelligent Power MOSFET http://www.fujisemi.com 80 Drain-source breakdown voltage VDSS=f(Tj):ID=1mA,VGS=0V 4.0 Gate threshold voltage VGS(th)=f(Tj):VDS=13V,ID=10mA 3.5 70 max. 60 3.0 max. 2.5 typ. VGS(th)[V] VDSS[V] 50 min. 40 30 1.5 20 1.0 10 0.5 0 -100 -50 0 50 100 150 0.0 -100 200 typ. 2.0 min. -50 0 Tj[℃] Zero gate voltage drain current IDSS=f(Tj):VDS=16V,VGS=0〜1.5V 60 25 50 20 40 IDSS[μA] IDSS[μA] 30 50 100 15 10 Zero gate voltage drain current IDSS=f(Tj):VDS=30V,VGS=0〜1.5V 30 max. 10 typ. typ. -50 0 50 200 20 max. 5 0 -100 150 Tj[℃] 100 150 0 -100 200 -50 0 Tj[℃] 50 100 150 200 Tj[℃] Zero gate minus voltage drain current IDS(-VGS)=f(Tj):VDS=16V,VGS=-1.5V,RG=100Ω Zero gate minus voltage drain current IDS(-VGS)=f(Tj):VDS=30V,VGS=-1.5V,RG=100Ω 60 25 55 50 20 45 IDS(-VGS)[μA] IDS(-VGS)[μA] 40 15 max. 10 35 30 25 max. 20 15 typ. 5 typ. 10 5 0 -100 -50 0 50 100 150 0 -100 200 -50 0 50 Tj[℃] Tj[℃] 3 100 150 200 F5041 FUJI Intelligent Power MOSFET http://www.fujisemi.com Gate-source leakage current IGS(n)=f(VGS):Tj=25℃,VDS=0V 400 350 350 300 300 250 250 IGS(n)[μA] IGS(n)[μA] 400 Gate-source leakage current IGS(n)=f(Tj):VGS=5V,VDS=0V 200 max. max. 200 150 150 100 100 typ. typ. 50 50 0 -100 -50 0 50 100 150 0 2 200 3 4 5 1200 6 7 8 VGS[V] Tj[℃] Drain-source on-state resistance RDS(on)=f(Tj):ID=0.5A,VGS=5V 1000 max. 1100 Drain-source on-state resistance RDS(on)=f(VGS):ID=0.5A,Tj=25℃ 900 1000 800 900 RDS(on)[mΩ] 700 600 500 400 600 max. 500 typ. 400 300 300 200 200 100 100 0 -100 -50 6 0 50 100 150 0 200 2 3 4 5 6 Tj[℃] VGS[V] Short circuit protection IOC=f(Tj):VGS=5V Short circuit protection IOC=f(VGS):Tj=25℃ 6 5 5 4 4 IOC[A] IOC[A] RDS(on)[mΩ] 700 typ. 800 3 2 7 8 typ. 3 2 typ. min. 1 1 min. 0 -100 -50 0 50 100 150 0 200 Tj[℃] 2 3 4 5 VGS[V] 4 6 7 8 F5041 FUJI Intelligent Power MOSFET http://www.fujisemi.com 100 Turn-on time, Turn-off time ton,toff=f(Tj):VDS=13V,ID=0.5A,VGS=5V 800 90 700 ton max. 80 Gate-source leakage current IGS(un)=f(Tj):VGS=5V Operating short-circuit protection circuit IGS(un)max. 600 Operating short-circuit protection circuit and over temperature protection circuit (Tj>150℃) IGS(un)max. toff max. 60 IGS(un)[μA] ton,toff[μS] 70 50 40 30 IGS(un) max. 300 IGS(un) typ. 100 10 0 -100 400 200 toff typ. 20 500 ton typ. -50 0 50 Tj[℃] 100 150 0 -100 200 -50 0 50 Tj[℃] 5 100 150 200 F5041 FUJI Intelligent Power MOSFET http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. 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