Fb180sa10 Hexfet Power Mosfet V

Transcript

PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V RDS(on) = 0.0065W G ID = 180A S Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry. S O T -22 7 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew 180 120 720 480 2.7 ± 20 700 180 48 5.7 -55 to + 150 Units W W/°C V mJ A mJ V/ns °C 2.5 1.3 kV N•m A Thermal Resistance Parameter RqJC RqCS 1 Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. Max. Units ––– 0.05 0.26 ––– °C/W www.irf.com 2/1/99 FB180SA10 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Ls Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 100 ––– ––– 2.0 93 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.093 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.0065 W VGS = 10V, ID = 108A „ ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 108A ––– 50 VDS = 100V, VGS = 0V µA ––– 500 VDS = 80V, VGS = 0V, TJ = 125°C ––– 200 VGS = 20V nA ––– -200 VGS = -20V 250 380 ID = 180A 40 60 nC VDS = 80V 110 165 VGS = 10.0V, See Fig. 6 and 13 „ 45 ––– VDD = 50V 351 ––– ID = 180A ns 181 ––– RG = 2.0W (Internal) 335 ––– RD = 0.27W, See Fig. 10 „ 5.0 ––– nH Between lead, and center of die contact ––– 10700 ––– VGS = 0V ––– 2800 ––– pF VDS = 25V ––– 1300 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 180 showing the A integral reverse ––– ––– 720 p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V „ ––– 300 450 ns TJ = 25°C, IF = 180A ––– 2.6 3.9 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L =43µH ƒ ISD £ 180A, di/dt £83A/µs, VDD £ V(BR)DSS, TJ £ 150°C „ Pulse width £ 300µs; duty cycle £ 2%. RG = 25W , IAS = 180A. (See Figure 12) 2 www.irf.com FB180SA10 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 1 0.1 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 150 ° C 100 TJ = 25 ° C 10 V DS = 25V 20µs PULSE WIDTH 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 4 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 20µs PULSE WIDTH TJ = 150 °C 10 ID = 180A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 FB180SA10 VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15000 Ciss 10000 Coss 5000 Crss 20 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 20000 ID = 180 A VDS = 80V VDS = 50V VDS = 20V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 1000 150 200 250 300 350 400 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C 100 1000 I D , Drain Current (A) ISD , Reverse Drain Current (A) 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 10us 100us 100 TJ = 25 ° C 1 1ms 10ms 10 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 50 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.8 TC = 25 ° C TJ = 150 ° C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com FB180SA10 200 175 VGS D.U.T. RG 150 I D , Drain Current (A) RD VDS + -VDD 125 10V Pulse Width £ 1 µs Duty Factor £ 0.1 % 100 75 Fig 10a. Switching Time Test Circuit 50 VDS 25 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 FB180SA10 1 5V EAS , Single Pulse Avalanche Energy (mJ) 1500 ID 71A 100A BOTTOM 160A TOP 1200 L VD S D .U .T RG IA S 20V D R IVE R + V - DD 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. QGD IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com FB180SA10 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG · · · · Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 FB180SA10 SOT-227 Package Details 38.3 0 ( 1.5 08 ) 37.8 0 ( 1.4 88 ) 4 .40 (.1 73 ) 4 .20 (.1 65 ) C H AM FE R 2 .00 ( .0 79 ) X 4 5 7 LE A D A S S IG M E NT S E -A 4 C S 4 1 3 G E IG B T 25 .7 0 ( 1 .012 ) 25 .2 0 ( .9 92 ) 6 .25 ( .246 ) 12.5 0 ( .49 2 ) A1 -B 1 D R FU L L 7 .50 ( .295 ) 15.00 ( .590 ) 2 G S H E XFET K2 3 4 1 2 3 2 K1 A2 H E X FR E D 3 0.2 0 ( 1.18 9 ) 2 9.8 0 ( 1.17 3 ) 4X 2.1 0 ( .082 ) 1.9 0 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .08 2 ) 1.90 ( .07 5 ) 12.30 ( .4 84 ) 11.80 ( .4 64 ) -C0.12 ( .005 ) Tube Q UANTITY PE R TUBE IS 1 0 M4 SR EW AND W ASHE R IN CLU DED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 8 www.irf.com