Transcript
http://www.fujielectric.com/products/semiconductor/
FGW30N120H
Discrete IGBT
Discrete IGBT (High-Speed V series) 1200V / 30A Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply Power coditionner Power factor correction circuit
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
Pulsed Collector Current Turn-Off Safe Operating Area
Symbols VCES VGES IC@25 IC@100 ICP -
Short Circuit Withstand Time
tSC
DC Collector Current
Maximum Power Dissipation PD Operating Junction Temperature Tj Storage Temperature Tstg
Characteristics Units Remarks 1200 V ±20 V 53 A TC =25°C, Tj =150°C 30 A TC =100°C, Tj =150°C 90 A Note *1 90 A VCE ≤1200V, Tj ≤175°C VCC ≤600V, VGE=12V 5 μs Tj ≤150°C 260 W TC =25°C -40 ~ +175 °C -55 ~ +175 °C
Collector
Gate
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter Breakdown Voltage
V(BR)CES
IC = 50μA, VGE = 0V
Zero Gate Voltage Collector Current
ICES
VCE = 1200V, VGE = 0V
Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage
IGES VGE (th)
VCE = 0V, VGE = ±20V VCE = +20V, IC = 30mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = +15V, IC = 30A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Cies Coes Cres
Gate Charge
QG
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
td(on) tr td(off) tf Eon
Turn-Off Energy
Eoff
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
td(on) tr td(off) tf Eon
Turn-Off Energy
Eoff
VCE=25V VGE=0V f=1MHz VCC = 600V IC = 30A VGE = 15V Tj = 25°C VCC = 600V IC = 30A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD (FDRW20S120J) reverse recovery. Tj = 175°C VCC = 600V IC = 30A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD (FDRW20S120J) reverse recovery.
Thermal resistance characteristics Items
Symbols
Conditions
Thermal Resistance, Junction-Ambient Thermal Resistance,Junction to Case
Rth(j-a) Rth(j-c)_IGBT
-
1
Tj =25°C Tj =175°C Tj =25°C Tj =175°C
Characteristics min. typ. max. 1200 250 2 200 4.0 5.0 6.0 1.8 2.34 2.3 2350 105 80 -
230
-
-
28 28 260 38 1.6
-
-
1.5
-
-
30 30 300 65 2.8
-
-
2.5
-
Characteristics min. typ. max. 50 0.568
Units V µA mA nA V V pF nC
ns
mJ
ns
mJ
Units °C/W
FGW30N120H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) Graph.1 DC Collector Current vs T V ≥+15V, T ≤175ºC
Graph.2 Collector Current vs. switching frequency V =+15V, T ≤175ºC, V =600V, D=0.5, R =10Ω, T =100ºC
C
GE
j
GE
C
G
80
CC
C
140
70
120
50
Switching frequency fs [kHz]
Collector current IC [A]
60
Tj≤175℃
40
30
20
100
80
60
40
20
10
0
0 25
50
75
100
125
150
175
0
10
20
30
40
50
Collector-Emitter corrent : ICE [A]
Case Temperature [°C]
Graph.3 Typical Output Characteristics (V -I ) T =25ºC CE
Graph.4 Typical Output Characteristics (V -I ) T =175ºC
C
CE
j
C
j
50
50
VGE=20V
VGE=20V 12V
12V
15V 40
15V
40
10V
8V
10V 8V 30
IC [A]
IC [A]
30
20
20
10
10
0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
0.5
1.0
1.5
VCE [V]
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6 Gate Threshold Voltage vs. T I =30mA, V =20V
Graph.5 Typical Transfer Characteristics V =+15V
j
GE
C
CE
8
50
7
Gate Threshold Voltage VGE(th) [V]
40
IC [A]
30
Tj=175℃
Tj=25℃
20
10
max.
6
5
typ.
4
min.
3
2
1
0
0 0
2
4
6
8
-50
10
-25
0
25
50
Tj [℃]
VGE [V]
2
75
100
125
150
175
FGW30N120H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8 Typical Gate Charge V =600V,I =30A,T =25°C
Graph.7 Typical Capacitance V =0V,f=1MHz,T =25°C GE
CC
j
4
10
C
j
20
Cies 3
10
15
Coes
2
10
VGE [V]
C [pF]
VCC=600V
Cres
1
10
10
5
0
10
0 -2
-1
10
0
10
1
10
10
B
0
50
100
VCE [V]
C
j
G
CC
C
1000
td(off) Switching Times [nsec]
100
td(off)
tf td(on) tr
10
100
tf td(on) tr
10
1
1 0
10
20
30
40
50
0
60
10
Collector Current IC [A]
C
j
G
50
60
CC
C
GE
6
6
5
5
4
40
G
CC
GE
30
Graph.12 Typical switching losses vs. R T =175°C,V =600V,I =30A,L=500µH V =15V
Graph.11 Typical switching losses vs. I T =175°C,V =600V,L=500µH V =15V,R =10Ω j
20
Gate Resistor RG [Ω]
Switching Energy Losses [mJ]
Switching Times [nsec]
300
GE
1000
Switching Energy Losses [mJ]
250
G
CC
GE
200
Graph.10 Typical switching time vs. R T =175°C,V =600V,I =30A,L=500µH V =15V
Graph.9 Typical switching time vs. I T =175°C,V =600V,L=500µH V =15V,R =10Ω j
150
QG [nC]
Eon
3
Eoff 2
1
4
Eon 3
Eoff
2
1
0
0
0
10
20
30
40
50
60
0
10
20
30
40
Gate Resistor RG [Ω]
Collector Current IC [A]
3
50
60
FGW30N120H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.13 Reverse biased Safe Operating Area T ≤175°C,V =+15V/0V,R =10Ω j
GE
G
150
Collector current IC [A]
100
50
0 0
200
400
600
800
1000
1200
1400
Collector-Emitter voltage : VCE [V]
Graph.14 Transient thermal resistance of IGBT 101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3 10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
4
FGW30N120H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION ① GATE ② COLLECTOR ③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
5
FGW30N120H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
6