Flash Memory Technology

Transcript

Safety • Service • Satisfaction -Renesas Microcomputer- Renesas Microcomputers General Presentation Flash Memory Technology MCU Product Marketing Dept.2 MCU Product Marketing Div. MCU Business Group 7/31/2008 Rev.13.00 1 €2008. Renesas Technology Europe Ltd., All rights reserved. Advantages of Using Microcomputers with Emb.-Flash Memory  Reduced turn-around time (TAT) in development - Eliminating the masking process reduces TAT  Reduced development and management costs - Elimination of mask ROM management costs - Reduced program-management costs  Good for small quantities of multiple product variants  Flash memory is reprogrammable in the field using the Internet or other means for convenient - Reprogramming of system code and parameters 08/10/2008 2 €2008. Renesas Technology Europe Ltd., All rights reserved. Trend of Embedded Memory Capacity Automotive powertrain application Program memory size(MB) 10 8MB 4MB FLASH 2MB FLASH 1MB 1 FLASH 512kB FLASH 256kB x8 10 years FLASH 128kB 0.1 OTP 64kB x8 OTP 32kB MASK 2~16kB 0.01 10 years x8 10 years 1980 1990 2000 08/10/2008 3 €2008. Renesas Technology Europe Ltd., All rights reserved. Year 2010 High Speed Flash Design Small area penalty to achieve 100MHz Flash Module Size [A.U.] 2.0 NOR 1.5 MONOS 1.0 0.5 0 50 100 150 Flash Read Speed[MHz] 08/10/2008 4 €2008. Renesas Technology Europe Ltd., All rights reserved. 200 Why MONOS? 1. Excellent features of MONOS No HV for word line(CG) and bit line (D) No HV-transistor in read path Scalable across processes Discrete charge storage High Reliability High speed read 2. Long Experience with MONOS type NVM - Over 20 years of EEPROM & smartcard business 08/10/2008 5 - Over 2B pcs. of sales result €2008. Renesas Technology Europe Ltd., All rights reserved. High Speed Flash Design Design technology Purpose (Effects) Metal word line Decrease word line resistance yes yes yes yes Divided bit line Decrease bit line capacitance yes yes yes yes Differential sense amp. High speed sensing yes yes yes Increase memory cell current yes yes High speed word driver yes yes Boosted word line Two way word driver Int. down converter (Refer ISSCC99/SESSION 6/PAPER MP6.8) Decrease Vdd fluctuation Low voltage word driver High speed word driver Hierarchical sense amp. Decrease Bit line drive time 08/10/2008 6 NOR MONOS 0.5 0.35 0.18 €2008. Renesas Technology Europe Ltd., All rights reserved. yes yes yes yes •High speed design ~ Word line drive High voltage circuit Read path Program/erase path Low voltage circuit NOR 0.5m 20MHz NOR 180nm 80MHz MONOS 100MHz 08/10/2008 7 Address Address Address Address decoder Address decoder Positive Level sifter Negative Level sifter Positive Level sifter Positive Level sifter WL driver Negative Level sifter Address decoder €2008. Renesas Technology Europe Ltd., All rights reserved. Word line High voltage WL driver High voltage WL driver Selector Medium voltage circuit Word line Word line WL driver Operating Frequency of MCU and Flash Only Renesas achieves up to 100MHz single cycle access! 1000 Operating Frequency (MHz) MCU operating frequency Operating frequency of FLASH(Renesas) Operating frequency of FLASH(Others) 100 10 1990 1995 2000 08/10/2008 8 €2008. Renesas Technology Europe Ltd., All rights reserved. 2005 Year 2010 Summary CPU performance requirement is increasing and embedded flash performance is getting important. MONOS has strong feature of high speed, high reliability and process scalability. Renesas will use 65 and 45nm nodes. 100MHz single cycle access was achieved with small area penalty. First 90nm MONOS product shows excellent performance. 08/10/2008 9 €2008. Renesas Technology Europe Ltd., All rights reserved. P/E Cycle Endurance of 0.2HND Flash (4KB) Change in Program/Erase Cycle and Byte Program/Erase Time Program Erase 1000 900 800 Block Erase Time(mS) Byte Program Time(uS/1Write) 60 50 40 30 20 700 600 500 400 300 200 10 100 0 0 1 10 100 1000 10000 100000 P/E Cycle 1 10 100 1000 10000 P/E Cycle P/E takes more time after P/E cycle reached 10K times. However, reliability and P/E characteristic do not present any problems. 08/10/2008 10 €2008. Renesas Technology Europe Ltd., All rights reserved. 100000