Fmh23n50es

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http://www.fujielectric.com/products/semiconductor/ FMH23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Equivalent circuit schematic TO-3P (Q) Drain(D) Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters GATE DRAIN SOURCE Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 500 500 ±23 ±92 ±30 23 767.3 31.5 5.4 100 2.50 315 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V I D =11.5A, VGS=10V I D =11.5A, VDS=25V Tch =25°C Tch =125°C VDS=25V VGS=0V f=1MHz Vcc =300V VGS=10V I D =11.5A RGS=10Ω Vcc =250V I D =23A VGS=10V L=1.16mH, Tch =25°C I F=23A, VGS=0V, Tch =25°C I F=23A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 500 3.7 8.5 23 - typ. 4.2 10 0.209 17 2700 330 20 42 36 94 17 73 24 27 10 0.90 0.5 8.0 max. 4.7 25 250 100 0.245 4050 495 30 63 54 141 25.5 109.5 36 40.5 15 1.35 - Unit V V min. typ. max. 0.40 50.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS=10A, L=14.1mH, Vcc=50V, RG =50Ω. E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Test Conditions Channel to Case Channel to Ambient Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=5.4kV/μs, Vcc≤BVDSS, Tch≤150°C. 1 FMH23N50ES 350 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 2 10 300 10µs 250 1 10 1ms 0 10 ID [A] PD [W] 200 100µs 150 10 -1 100 Power loss waveform : Square waveform 10 50 -2 PD t 0 0 70 25 50 75 Tc [°C] 100 125 10 150 -3 10 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 100 0 1 10 VDS [V] 10 2 3 10 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 60 10V 10 8.0V 40 ID[A] ID [A] 50 7.5V 30 1 7.0V 20 6.5V 10 VGS=6.0V 0.1 0 0 100 4 8 12 VDS [V] 16 20 0 24 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.7 0.6 10 2 4 6 VGS[V] 8 10 12 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 7V gfs [S] RDS(on) [ Ω ] 0.5 1 0.4 8V 10V 20V 0.3 0.2 0.1 0.1 0.1 1 10 100 0 10 20 30 ID [A] ID [A] 2 40 50 60 FMH23N50ES 1.0 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 8 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7 0.8 VGS(th) [V] RDS(on) [ Ω ] 6 0.6 0.4 max. typ. 0.2 5 max. 4 typ. 3 min. 2 1 0.0 -50 14 -25 0 25 50 Tch [°C] 75 100 125 0 150 -50 Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C 12 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 4 10 Vcc= 100V 250V 400V 10 Ciss 3 10 C [pF] VGS [V] 8 6 2 10 Coss 4 1 10 Crss 2 0 0 0 20 40 60 80 100 10 120 -2 10 -1 10 10 Qg [nC] 100 0 1 2 10 10 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 10 2 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω td(off) 10 tf t [ns] IF [A] td(on) tr 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 10 1 10 0 10 -1 0 1 10 10 ID [A] VSD [V] 3 10 2 FMH23N50ES FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=23A 800 101 IAS=23A 700 Zth(ch- c) [°C/ W] 100 600 IAS=14A 500 EAV [mJ] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 400 IAS=10A 10-1 10-2 300 200 10-3 10-6 100 10-5 10-4 10-3 t [sec] 0 0 25 50 75 100 125 150 starting Tch [°C] 4 10-2 10-1 100 FMH23N50ES FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of December 2014. 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