Transcript
FMH40N60S1FD
http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P
13 ± 0.2 10 ± 0.2
Equivalent circuit schematic
φ3.2± 0.1
15.5max
1.5±0.2 4.5± 0.2
5±0.1
Features Pb-free lead terminal RoHS compliant
4.5±0.2 1.5± 0.2
1.5
19.5 ±0.2
②Drain
Applications 1.6
+0.3 -0.1
2.2
1.6
+0.3 -0.1
+0.3 -0.1
1.1 5.45 ± 0.2
14.5 ±0.2
3 ±0.2
For switching
PRE-SOLDER
+0.2 -0.1
0.5
5.45 ± 0.2
+0.2 0
①
1.5
① Gate ②
CONNECTION
③
③Source
1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC =25°C (unless otherwise specified) Parameter
Symbol
Characteristics
Unit
Remarks
Drain-Source Voltage
VDS VDSX
IDP VGS
600 600 ±40 ±25 ±120 ±30
V V A A A V
VGS =-30V Tc=25°C Note*1 Tc=100°C Note*1 Note*1
Continuous Drain Current
ID
Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
7.6
A
Note *2
Non-Repetitive Maximum Avalanche Energy
EAS
1390
mJ
Note *3
Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
dVDS /dt dV/dt -di/dt
kV/μs kV/μs A/μs
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch Tstg
50 30 100 2.5 315 150 -55 to +150
W
VDS ≤ 600V Note *4 Note *5 Ta=25°C TC =25°C
°C °C
Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤ 150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25°C, IAS=4.6A, L=120mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤ -I D, -di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C. Note *5 : I F ≤ -I D, dV/dt=30kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C.
Electrical Characteristics at TC =25°C (unless otherwise specified)
• Static Ratings Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID =250μA VGS =0V
600
-
-
V
Gate Threshold Voltage
VGS(th)
ID =1.5mA VDS =VGS
3
4
5
V
Zero Gate Voltage Drain Current
IDSS
VDS =600V VGS =0V
Tch=25°C
-
-
25
VDS =480V VGS =0V
Tch=125°C
-
300
-
μA
Gate-Source Leakage Current
IGSS
VGS = ± 30V VDS =0V
-
10
100
nA
Drain-Source On-State Resistance
RDS(on)
ID =20A VGS =10V
-
0.079
0.093
Ω
Gate resistance
RG
f=1MHz, open drain
-
1.1
-
Ω
1
8506 OCTOBER 2015
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
• Dynamic Ratings Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Forward Transconductance
gfs
ID =20A VDS =25V
14.5
29
-
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS =400V VGS =0V f=250kHz
-
2865 83 6.5
-
Effective output capacitance, energy related (Note *6)
Co(er)
VGS =0V VDS =0…400V
-
216
-
Effective output capacitance, time related (Note *7)
Co(tr)
VGS =0V VDS =0…400V ID=constant
-
758
-
-
124 29 139 19 104 27 46 14
-
min.
typ.
max.
Unit
7.6
-
-
A
-
1.1
1.35
V
-
200
-
ns
-
1.35
-
μC
-
13.5
-
A
min.
typ.
max.
Unit
-
-
0.40 50
°C/W °C/W
Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source crossover Charge
td(on) tr td(off) tf QG QGS QGD QSW
VDD =400V, VGS =10V ID =20A, RG =13Ω See Fig.3 and Fig.4 VDD =400V, ID =40A VGS =10V See Fig.5
pF
ns
nC
Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 400V. Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 400V.
• Reverse Diode Parameter
Symbol
Conditions
Avalanche Capability
IAV
L=26.7mH,Tch=25°C See Fig.1 and Fig.2
Diode Forward On-Voltage
VSD
IF=40A,VGS =0V Tch=25°C
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irp
IF=40A, VDD =400V -di/dt=100A/μs Tch=25°C See Fig.6 and Fig.7
Thermal Resistance Parameter
Symbol
Channel to Case Channel to Ambient
Rth(ch-c) Rth(ch-a)
2
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Allowable Power Dissipation PD=f(Tc)
350
Safe Operating Area ID=f(VDS):Duty=0(Single pulse), Tc=25°C 100
t= 1µs
300
10µs 250
10
ID [A]
PD [W]
200
150
100µs
1
100
Power loss waveform : Square waveform
0.1
PD
50
t
0 0
25
50
75
100
125
1ms
0.01
150
1
10
Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C
130
1000
Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=150°C
80
20V
120
70
10V
110 100
8V
10V
8V
70
ID [A]
7.5V
60
6.5V
40
7V
30
6.5V
20
VGS=6V
10
50
7V
50
80
20V
7.5V
60
90
ID [A]
100
VDS [V]
Tc [°C]
6V
40 30 20
VGS=5.5V
10 0
0 0
5
10
VDS [V]
15
20
0
25
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25°C
0.35
6V
6.5V
7V
5.5V
0.65 8V
0.30
10
VDS [V]
15
6V
6.5V
0.55
0.45
10V
RDS(on) [Ω]
RDS(on) [Ω]
7V
0.50
0.15
7.5V
0.40 0.35
8V 10V
0.30 VGS=20V
0.25
VGS=20V
0.10
25
0.60
0.25
0.20
20
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=150°C
0.70
7.5V
5
0.20 0.15
0.05
0.10 0.05
0.00 0
10
20
30
40
50
60 70 ID [A]
80
0.00
90 100 110 120 130
0
3
10
20
30
40
ID [A]
50
60
70
80
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=1.5mA
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V
0.3
6
5
0.2
typ.
RDS(on) [Ω]
VGS(th) [V]
4
3
max. 0.1
2 typ.
1
0.0 -50
-25
0
25
50 Tch [°C]
75
100
125
0
150
-50
0
25
50 75 Tch [°C]
100
125
150
Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V
Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V
100
-25
100
Tch=25℃ 10
150℃
Tch=25℃
150℃
gfs [S]
ID[A]
10
1
1
0.1
0.1 0
1
2
3
4
5 VGS[V]
6
7
8
9
10
0.1
1
10
100
ID [A]
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test
Typical Capacitance C=f(VDS):VGS=0V, f=250kHz 100000
100 10000 Ciss 10
IF [A]
150℃
C [pF]
1000
Tch=25℃
Coss
100 1
Crss
10
0.1 0.0
0.5
1.0
VSD [V]
1.5
1
2.0
0.1
4
1
10
VDS [V]
100
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Typical Switching Characteristics vs. ID Tch=25°C t=f(ID):Vdd=400V, VGS=10V/0V, RG=13Ω
Typical Coss stored energy
30
10000
25
20
1000
Eoss [uJ]
td(on)
t [ns]
15
td(off) 10
100 tr
5
tf
0 0
100
200
300
400
500
10
600
0.1
1
VDS [V]
100
ID [A] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V, I(AV)<=7.6A
Typical Gate Charge Characteristics VGS=f(Qg):ID=40A, Tch=25°C
10
10
3000
Vdd=480V
8
IAS=2.3A
2500
400V 120V
2000
EAV [mJ]
VGS [V]
6
4
2
0
20
40
60
80
100
1000
IAS=7.6A
0
120
0
Qg [nC]
101
100
10-1
10-2
10-6
10-5
10-4
10-3
25
50
75
starting Tch [°C]
Transient Thermal Impedance Zth(ch-c) = f (t):D=0
Zth(ch-c) [℃/W]
IAS=4.6A
500
0
10-3
1500
10-2
10-1
100
t [sec]
5
100
125
150
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
+10V
L
VGS
-15V BVDSS
Rg
IAV
VDD
D.U.T.
VDS 0
Fig.1 Avalanche Test circuit
ID
Fig.2 Operating waveforms of Avalanche Test VDS
L
Diode
VGS
VDS ×90%
VDS ×90%
VGS ×90%
VDD
RG
D.U.T.
VDS ×10%
VDS ×10%
VGS ×10%
PG td(on)
Fig.3 Switching Test circuit
tr
td(off)
tf
Fig.4 Operating waveform of Switching Test
VGS,VDS
VDS
VGS QG
10V
QSW QGS
QGD
Qg Fig.5 Operating waveform of Gate charge Test VDS peak
IF D.U.T
L
VDS
trr VDD
RG
Irp×10%
Same as D.U.T.
PG
Fig.6 Reverse recovery Test circuit
Irp
trr
Qrr= ∫ 0 ir・dt
Fig.7 Operating waveform of Reverse recovery Test 6
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Outview: TO-3P Package φ3.2± 0.1
4.5±0.2 1.5± 0.2
1.6
+0.3 -0.1
2.2
1.6
+0.3 -0.1
+0.3 -0.1
1.1 5.45 ± 0.2
14.5 ±0.2
3 ±0.2
1.5
10 ± 0.2
1.5±0.2 4.5± 0.2
19.5 ±0.2
13 ± 0.2
5±0.1
15.5max
PRE-SOLDER
+0.2 -0.1
0.5
5.45 ± 0.2
+0.2 0
1.5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS.
Marking
Country of origin mark. P : Philippines
Type name Trademark
Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark
40F60S1
YMNNN
* The font (font type,size) and the trademark-size might be actually different. 7
FMH40N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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