Fmi10n60e

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http://www.fujielectric.com/products/semiconductor/ FMI10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Equivalent circuit schematic T-Pack(L) Drain(D) PRE-SOLDER Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Drain-Source Voltage Characteristics 600 600 ±10 ±40 ±30 10 416 16.5 4.4 100 1.67 165 150 -55 to + 150 2 Tch Tstg VISO Operating and Storage Temperature range Isolation Voltage Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C kVrms t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V I D =5A, VGS=10V I D =5A, VDS=25V Tch=25°C Tch=125°C VDS=25V VGS=0V f=1MHz Vcc =300V VGS=10V I D =5A RG=15Ω Vcc =300V I D =10A VGS=10V L=3.05mH, Tch=25°C I F=10A, VGS=0V, Tch=25°C I F=10A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 600 2.5 6 10 - typ. 3.0 10 0.675 12 1800 140 10.5 20 9 100 18 47 10.5 13.5 0.86 0.51 5.4 max. 3.5 25 250 100 0.79 2700 210 16 30 13.5 150 27 70.5 16 20 1.30 - Unit V V min. typ. max. 0.758 75.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=4A, L=47.7mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Test Conditions Channel to Case Channel to Ambient Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=4.4kV/μs, Vcc≤BVDSS, Tch≤150°C. 1 FMI10N60E 200 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Allowable Power Dissipation PD=f(Tc) 2 10 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 180 160 10µs 1 10 140 100µs PD [W] 120 0 ID [A] 100 80 10 1ms 60 Power loss waveform : Square waveform -1 10 40 PD 20 t DC -2 0 0 25 50 75 100 125 10 150 -1 0 10 1 10 10 VDS [V] Tc [°C] 20 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 2 3 10 10 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 20V 10V 6.0V 1 10 5.0V 15 0 ID[A] ID [A] 10 10 -1 10 -2 10 4.5V 5 -3 10 VGS=4.0V -4 0 10 0 100 5 10 VDS [V] 15 20 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.3 2 3 4 VGS[V] 5 6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 4.5V VGS=4.0V 5V 1.2 1.1 RDS(on) [ Ω ] gfs [S] 10 1 6V 1.0 10V 20V 0.9 0.8 0.7 0.1 0.6 0.01 0.01 0.5 0.1 1 10 0 100 5 10 ID [A] ID [A] 2 15 20 FMI10N60E 2.5 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 6 5 VGS(th) [V] 2.0 RDS(on) [ Ω ] 1.5 max. 1.0 typ. 0.5 4 max. 3 typ. 2 min. 1 0 0.0 -50 20 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA -25 0 25 50 Tch [°C] 75 100 125 -50 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25 °C -25 0 25 50 75 Tch [°C] 100 125 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 18 4 10 16 14 12 3 10 480V C [pF] VGS [V] Ciss Vcc= 120V 300V 10 2 10 8 Coss 6 1 10 4 Crss 2 0 0 0 100 10 20 30 40 Qg [nC] 50 60 70 10 80 -2 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 3 10 -1 0 10 10 VDS [V] 1 2 10 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω 10 td(off) 2 10 t [ns] IF [A] tf 1 td(on) 1 10 tr 0.1 0.01 0.00 0 0.25 0.50 0.75 1.00 1.25 10 1.50 -1 10 VSD [V] 3 0 10 1 ID [A] 10 2 10 FMI10N60E 600 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A 1 10 500 100 Zt h(ch- c) [°C/W] IAS=4A EAV [mJ] 400 IAS=6A 300 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10-1 10-2 200 IAS=10A 10-3 100 10-6 10-5 10-4 10-3 t [sec] 0 0 25 50 75 100 125 150 starting Tch [°C] 4 10-2 10-1 100 FMI10N60E FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2015. 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