Fmi16n60es

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http://www.fujielectric.com/products/semiconductor/ FMI16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Equivalent circuit schematic T-Pack(L) Drain(D) PRE-SOLDER Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 600 600 ±16 ±64 ±30 16 554.8 27 3.8 100 2.16 270 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V I D =8A, VGS=10V I D =8A, VDS=25V Tch=25°C Tch=125°C VDS=25V VGS=0V f=1MHz Vcc =300V VGS=10V I D =8A RG=18Ω Vcc =300V I D =16A VGS=10V L=1.74mH, Tch=25°C I F=16A, VGS=0V, Tch=25°C I F=16A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 600 3.7 5 16 - typ. 4.2 10 0.40 10 2100 230 13 43 41 94 20 56 20 21 9.5 0.90 0.7 9.0 max. 4.7 25 250 100 0.47 3150 345 19.5 64.5 61.5 141 30 114 25.5 33 10 1.35 - Unit V V min. typ. max. 0.460 75.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=7A, L=20.8mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Test Conditions Channel to case Channel to ambient Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=3.8kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMI16N60ES 400 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Allowable Power Dissipation PD=f(Tc) 2 10 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 1 300 10 0 200 ID [A] PD [W] 100µs 100 10 1ms 10 Power loss waveform : Square waveform -1 PD t 0 0 25 50 75 100 125 10 150 -2 -1 0 10 1 10 10 VDS [V] Tc [°C] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 100 40 10 2 3 10 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 35 10V 30 8.0V 10 ID[A] ID [A] 25 7.5V 20 1 15 7.0V 10 6.5V 5 VGS=6.0V 0.1 0 0 100 4 8 12 VDS [V] 16 20 0 24 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.8 2 4 6 VGS[V] 8 10 12 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 0.7 7V 8V gfs [S] RDS(on) [ Ω ] 10 10V 20V 0.6 0.5 1 0.4 0.3 0.1 0.1 1 10 0 100 5 10 15 20 ID [A] ID [A] 2 25 30 35 40 FMI16N60ES 1.4 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 8 7 1.2 6 1.0 5 VGS(th) [V] 0.8 RDS(on) [ Ω ] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 0.6 max. typ. 0.4 max. 4 typ. 3 min. 2 0.2 1 0 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 -50 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C 0 25 50 75 Tch [°C] 100 125 4 10 Vcc= 120V 300V 480V 10 Ciss 3 10 C [pF] 8 VGS [V] 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 14 12 -25 2 6 10 Coss 4 1 10 2 Crss 0 0 0 20 40 60 80 10 100 -2 10 10 -1 0 10 1 2 10 VDS [V] Qg [nC] 100 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=18 Ω 10 td(off) 2 10 10 tf t [ns] IF [A] td(on) 1 0.1 0.00 tr 1 10 0 10 0.25 0.50 0.75 1.00 1.25 -1 1.50 10 VSD [V] 10 0 1 10 ID [A] 3 2 10 FMI16N60ES 700 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A 600 IAS=7A Zth(ch-c) [°C/W] EAV [mJ] 500 IAS=10A 400 300 10 1 10 0 -1 10 -2 10 IAS=16A 200 -3 10 100 10 -6 -5 10 -4 10 -3 10 t [sec] 0 0 25 50 75 100 125 150 starting Tch [°C] 4 -2 10 -1 10 10 0 FMI16N60ES FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. 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