Fml16n60es

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http://www.fujisemi.com FML16N60ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TFP 7.0± 0.2 Equivalent circuit schematic 0.4± 0.1 4 D 9.0±0.2 0.5±0.2 1.5 (5.8) G 1 Solder Plating (4.0) (3.2) (0.8) (2.2) 1.0±0.2 3 S2 (2.1) 3 3.6±0.2 2.8±0.2 2 1 1.0±0.2 0.4±0.1 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters S1 2 (10.1) 2.0 2.5 2.0 Applications 10.1±0.3 0.5 0.1 9.0± 0.2 4 0.6±0.2 Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 600 600 ±16 ±64 ±30 16 554.8 27 3.8 100 1.44 270 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V I D =8A, VGS=10V I D =8A, VDS=25V Tch=25°C Tch=125°C VDS=25V VGS=0V f=1MHz Vcc =300V VGS=10V I D =8A RG=18Ω Vcc =300V I D =16A VGS=10V L=1.74mH, Tch=25°C I F=16A, VGS=0V, Tch=25°C I F=16A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 600 3.7 5 16 - typ. 4.2 10 0.40 10 2100 230 13 43 41 94 20 56 20 21 9.5 0.90 0.7 9 max. 4.7 25 250 100 0.47 3150 345 19.5 64.5 61.5 141 30 114 25.5 33 14.5 1.08 - Unit V V min. typ. max. 0.46 87 52 Unit °C/W °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Rth (ch-a) Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Test Conditions Channel to case Channel to Ambient Channel to Ambient Note*6 Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C. Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 1 FML16N60ES 300 FUJI POWER MOSFET http://www.fujisemi.com Allowable Power Dissipation PD=f(Tc) 2 10 Safe Operating Area ID=f(VDS):Duty=0(Singlepulse), Tc=25˚c t= 1 s 250 10µs 1 10 100µs PD[W] 200 ID [A] 150 0 10 1ms 100 Power loss waveform : Square waveform -1 10 50 PD t 0 -2 0 25 50 75 Tc [˚C] 100 125 10 150 1 2 10 3 10 10 VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25˚C Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C 30 100 10V 8.0V 7.5V 25 10 ID [A] 20 ID [A] 0 10 7.0V 15 1 10 6.5V 5 VGS=6.0V 0.1 0 100 0 4 8 12 VDS [V] 16 20 24 0 2 4 6 VGS[V] 8 10 12 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25˚C Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25˚C 1.0 VGS=6.0V 6.5V 7V 0.9 8V 10V 20V 0.8 gfs [S] RDS(on) [Ω] 10 0.7 0.6 1 0.5 0.4 0.3 0.1 0.1 1 10 0 100 5 10 15 ID [A] ID [A] 2 20 25 30 FML16N60ES FUJI POWER MOSFET http://www.fujisemi.com Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V 2.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 8 1.8 7 1.6 6 5 1.2 max. VGS(th) [V] RDS(on) [Ω] 1.4 1.0 0.8 max. 0.6 typ. 4 typ. 3 min. 2 0.4 1 0.2 0 0.0 -50 -25 0 25 50 Tch [˚ C] 75 100 125 -50 150 -25 0 25 50 75 Tch [˚ C] 100 125 150 Typical Capacitance C=f(VDS):VGS=0V, f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=13A, Tch=25˚C 14 12 4 10 Vcc= 120V 300V 480V 10 Ciss 3 8 C[pF] VGS[V] 10 6 2 10 Coss 4 1 10 2 Crss 0 0 10 0 20 40 60 80 100 -2 10 -1 0 10 10 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25˚C 1 2 10 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=18Ω 3 100 10 10 10 td(off) tf td(on) t [ns] IF [A] 2 tr 1 10 1 0.1 0.00 0 10 0.25 0.50 0.75 VSD [V] 1.00 1.25 -1 1.50 10 3 0 1 10 10 ID [A] 2 10 FML16N60ES FUJI POWER MOSFET http://www.fujisemi.com Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V, I(AV)<=13A 700 600 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 IAS=6A 400 0 10 IAS=8A Zth(ch-c) [˚C/W] EAV[mJ] 500 300 IAS=13A 200 -1 10 -2 10 100 -3 0 10 0 25 50 75 100 125 -6 10 150 -5 10 -4 10 -3 10 t [sec] starting Tch [˚C] 4 -2 10 -1 10 0 10 FML16N60ES FUJI POWER MOSFET http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A  ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T  he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. 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