Transcript
FMV08N60S1
http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Features
Outline Drawings [mm]
Pb-free lead terminal RoHS compliant
Equivalent circuit schematic
TO-220F (SLS) ②Drain
Applications For switching
① ②③
① Gate ③Source
Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC =25°C (unless otherwise specified) Description
Symbol
Characteristics
Unit
Drain-Source Voltage
VDS VDSX
Continuous Drain Current
ID
Pulsed Drain Current Gate-Source Voltage
IDP VGS
600 600 ±8 ±5.1 ±24 ±30
V V A A A V
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
2.5
A
Note *2
Non-Repetitive Maximum Avalanche Energy
EAS
249.6
mJ
Note *3
Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
dVDS /dt dV/dt -di/dt
kV/μs kV/μs A/μs
Maximum Power Dissipation
PD
50 15 100 2.16 25 150 -55 to +150 2
Tch Tstg Viso
Operating and Storage Temperature range Isolation Voltage
W °C °C kVrms
Remarks VGS =-30V Tc=25°C Note*1 Tc=100°C Note*1
VDS ≤ 600V Note *4 Note *5 Ta=25°C TC =25°C
t=60sec, f=60Hz
Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25°C, IAS=1.5A, L=203mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/μs, VDD ≤400V, Vpeak ≤BVDSS , Tch ≤150°C. Note *5 : I F ≤-I D, dV/dt=15kV/μs, VDD ≤400V, Vpeak ≤BVDSS , Tch ≤150°C.
Electrical Characteristics at TC =25°C (unless otherwise specified)
• Static Ratings Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID =250μA VGS =0V
600
-
-
V
Gate Threshold Voltage
VGS(th)
ID =250μA VDS =VGS
2.5
3.0
3.5
V
Zero Gate Voltage Drain Current
IDSS
VDS =600V VGS =0V
Tch=25°C
-
-
25
VDS =480V VGS =0V
Tch=125°C
-
-
250
μA
Gate-Source Leakage Current
IGSS
VGS = ± 30V VDS =0V
-
10
100
nA
Drain-Source On-State Resistance
RDS(on)
ID =4A VGS =10V
-
0.399
0.47
Ω
Gate resistance
RG
f=1MHz, open drain
-
2.9
-
Ω
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08169b OCTOBER 2015
FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
• Dynamic Ratings Description
Symbol
Conditions
min.
typ.
max.
Unit
Forward Transconductance
gfs
ID =4A VDS =25V
3.5
7.5
-
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS =10V VGS =0V f=1MHz
-
620 1340 120
-
Effective output capacitance, energy related (Note *6)
Co(er)
VGS =0V VDS =0…480V
-
48
-
Effective output capacitance, time related (Note *7)
Co(tr)
VGS =0V VDS =0…480V ID=constant
-
140
-
-
9.5 29 75 16 25 7.5 6 5
-
min.
typ.
max.
Unit
2.5
-
-
A
-
0.9
1.35
V
285
-
ns
-
3.2
-
μC
-
20
-
A
min.
typ.
max.
Unit
-
-
5.0 58
°C/W °C/W
Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source crossover Charge
td(on) tr td(off) tf QG QGS QGD QSW
VDD =400V, VGS =10V/0V ID =4A, RG =30Ω See Fig.3 and Fig.4 VDD =480V, ID =8A VGS =10V See Fig.5
pF
ns
nC
Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% BVDSS . Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 80% BVDSS .
• Reverse Diode Description
Symbol
Conditions
Avalanche Capability
IAV
L=43.9mH, Tch=25°C See Fig.1 and Fig.2
Diode Forward On-Voltage
VSD
IF=8A, VGS =0V Tch=25°C
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irp
IF=8A, VDD =400V -di/dt=100A/μs VGS(Q1)=short, VGS(Q2)=10V/0V RG =330Ω Tch=25°C See Fig.6 and Fig.7
Thermal Resistance Parameter
Symbol
Channel to Case Channel to Ambient
Rth(ch-c) Rth(ch-a)
2
FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Allowable Power Dissipation PD= f(TC)
30
Safe Operating Area ID=f(VDS): Duty=0(Single pulse), TC=25°C
2
10
t= 1µs
1
10
10µs
PD [W]
20
100µs
ID [A]
0
10
10 Power loss waveform : Square waveform
-1
10
1ms
PD t -2
0 0
25
50
75
100
125
10
150
-1
0
10
1
10
Typical Output Characteristics ID=f(VDS): 80µs pulse test, Tch=25°C
2
10 VDS [V]
TC [°C]
3
10
10
Typical Output Characteristics ID=f(VDS): 80µs pulse test, Tch=150°C 15
25
10V 20V
8V
10V
20V
8V
20
6V
6.5V 5.5V
10
15
10
ID [A]
ID [A]
6V
5.5V
5
5V 5
VGS=4.5V
5V VGS=4.5V 0
0 0
5
10
VDS [V]
15
20
Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80µs pulse test, Tch=25°C
1.2
5V
5.5V
1.1
2.2
1.0
2.0
VDS [V]
15
20
4.5V
5.5V
5V
25
6V
8V
10V
1.6
RDS(on) [ Ω ]
VGS=20V
0.7
10
1.8
10V
0.8
5
Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80µs pulse test, Tch=150°C
2.4
6.5V 8V
6V
0.9
RDS(on) [ Ω ]
0
25
0.6 0.5
1.4
1.0
0.4
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0.0
VGS=20V
1.2
0.0
0
5
10
15 ID [A]
20
25
0
3
5
10
ID [A]
15
FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Drain-Source Breakdown Voltage BVDSS=f(Tch):ID=10mA,VGS=0V
700
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V
1.2
This curve is not a guaranteed performance and is a reference value.
1.1
680
1.0
660
0.9 640
0.8 0.7 RDS(on) [Ω]
BVDSS [V]
620 600 580
max.
0.6 0.5 0.4
560
typ.
0.3 540
0.2
520
0.1
500
0.0 -50
-25
0
25
50 Tch [ °C]
75
100
125
150
-50
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
0
25
50 Tch [ °C]
75
100
125
150
Typical Transfer Characteristic ID=f(VGS):80µs pulse test,VDS=25V
100
5
-25
10
1
150℃
ID[A]
VGS(th) [V]
4
3 typ.
Tch=25℃
0.1
2 0.01
1
0
1E-3
-50
-25
0
25
50 75 Tch [ °C]
100
125
150
0
Typical Transconductance gfs=f(ID):80µs pulse test,VDS=25V
3
4
5 VGS[V]
6
7
8
9
10
Tch=25℃
10
150℃
10
IF [A]
gfs [S]
2
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test
100
100
1
1
150℃
Tch=25℃
1
0.1
0.01 0.01
0.1
0.1
1
10
0.0
100
0.5
1.0 VSD [V]
ID [A]
4
1.5
2.0
FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
4
Typical Coss stored energy 8
10
3
10
6
Ciss 2
Eoss [uJ]
C [pF]
10
Coss
1
10
4
2 0
10
Crss
-1
0
10
-2
-1
10
3
10
0
10
1
10
0
2
10
10
100
200
300
400
500
VDS [V]
VDS [V]
Typical Switching Characteristics vs. ID Tch=25 °C t=f(ID):Vdd=400V,VGS=10V/0V,RG=30Ω, L=500uH
Typical Gate Charge Characteristics VGS=f(Qg):ID=8A,Tch=25°C
10
600
8 Vdd=480V 2
10
tr
t [ns]
VGS [V]
120V
tf 1
10
300V
6
td(off)
4
td(on) 2
0
0
10
0
0
1
10
10
5
10
Maximum Avalanche Energy vs. startingTch E(AV)=f(starting Tch):VCC=60V,I(AV)<=2.5A
500
20
25
Transient Thermal Impedance Zth(ch-c)=f(t):D=0
102
IAS=0.8A
101
Zth(ch-c) [℃/W]
400
300 EAV [mJ]
15 Qg [nC]
ID [A]
IAS=1.5A
100
10-1
200 IAS=2.5A
10-2 10-6
100
10-5
10-4
10-3 t [sec]
0 0
25
50
75 starting Tch [°C]
100
125
150
5
10-2
10-1
100
FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ +10V
L
VGS
-15V BVDSS
Rg
IAV
VDD
D.U.T
VDS 0
Fig.1 Avalanche Test circuit
ID
Fig.2 Operating waveforms of Avalanche Test VDS
VGS
VDS ×90%
L
Diode
VDS ×90%
VGS ×90%
VDD
RG
D.U.T.
VDS ×10%
VDS ×10%
VGS ×10%
PG td(on)
Fig.3 Switching Test circuit
tr
td(off)
tf
Fig.4 Operating waveform of Switching Test
VGS,VDS
VDS
VGS QG
10V
QSW QGS
QGD
Qg Fig.5 Operating waveform of Gate charge Test VDS peak
IF D.U.T
L
VDD
RG
VDS
trr
Irp×10%
Same as D.U.T.
PG
Fig.6 Reverse recovery Test circuit
Irp
trr
Qrr=∫ ir・dt 0
Fig.7 Operating waveform of Reverse recovery Test
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FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Outview: TO-220F (SLS) Package
Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.
Marking
Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark
Trademark Country of origin mark.
YMNNN
08N60S1
" " (Blank): Japan P : Philippines
Type name
* The font (font type,size) and the trademark-size might be actually different.
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FMV08N60S1
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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