Transcript
http://www.fujielectric.com/products/semiconductor/
FMV35N60S1FD
FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Features
Outline Drawings [mm]
Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg)
Equivalent circuit schematic
TO-220F(SLS)
Drain(D)
Applications UPS Server Telecom Power conditioner system Power supply
Gate(G) Source(S) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC =25°C (unless otherwise specified) Description
Symbol
Drain-Source Voltage
Characteristics
Unit
VDS
600
V
VDSX
600
V
VGS=-30V
±35
A
Tc=25°C
Note*1
±22
A
Tc=100°C
Note*1
Note*1
Continuous Drain Current
ID
Pulsed Drain Current Gate-Source Voltage
IDP
±105
A
Remarks
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
6.6
A
Note *2
Non-Repetitive Maximum Avalanche Energy
EAS
1239.6
mJ
Note *3
Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
dVDS /dt
50
kV/μs
dV/dt
30
kV/μs
Note *4
-di/dt
100
A/μs
Note *5
Maximum Power Dissipation
PD
Operating and Storage Temperature range
2.16
W
110
Tch
150
°C
Tstg
-55 to +150
°C
VDS ≤ 600V
Ta =25°C Tc=25°C
Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25°C, IAS=4A, L=142mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/μs, VDS peak ≤600V, Tch ≤150°C. Note *5 : I F ≤-I D, dV/dt=30kV/μs, VDS peak ≤600V, Tch ≤150°C.
Electrical Characteristics at TC =25°C (unless otherwise specified)
• Static Ratings Description
Symbol
Conditions
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Zero Gate Voltage Drain Current
IDSS
min.
typ.
max.
Unit
ID =250μA VGS=0V
600
-
-
V
ID =1.3mA VDS=VGS
3.0
4.0
5.0
V
VDS=600V VGS=0V
Tch =25°C
-
-
25
VDS=480V VGS=0V
Tch =125°C
-
190
-
μA
Gate-Source Leakage Current
IGSS
VGS= ± 30V VDS=0V
-
10
100
nA
Drain-Source On-State Resistance
RDS(on)
ID =17.5A VGS=10V
-
0.089
0.105
Ω
Gate resistance
RG
f=1MHz, open drain
-
1.1
-
Ω
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8330 JANUARY 2014
FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
• Dynamic Ratings Description
Symbol
Conditions
min.
typ.
max.
Unit
Forward Transconductance
gfs
ID =17.5A VDS=25V
13.5
27
-
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss
VDS=400V VGS=0V f=250kHz
-
2530
-
-
75
-
-
5.5
-
Coss Crss
Effective output capacitance, energy related (Note *6)
Co(er)
VGS=0V VDS=0…400V
-
195
-
Effective output capacitance, time related (Note *7)
Co(tr)
VGS=0V VDS=0…400V ID=constant
-
670
-
Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source crossover Charge
td(on) tr td(off) tf QG QGS QGD QSW
VDD =400V, VGS=10V ID =17.5A, RG =18Ω See Fig.3 and Fig.4
VDD =400V, ID =35A VGS=10V See Fig.5
pF
-
116
-
-
28
-
-
163
-
-
18
-
-
92
-
-
24.5
-
-
38
-
-
13
-
min.
typ.
max.
Unit
6.6
-
-
A
-
1
1.35
V
-
185
-
ns
-
1.3
-
μC
-
14
-
A
min.
typ.
max.
Unit °C/W °C/W
ns
nC
Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 400V. Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 400V.
• Reverse Diode Description
Symbol
Conditions
Avalanche Capability
IAV
L=31.6mH,Tch =25°C See Fig.1 and Fig.2
Diode Forward On-Voltage
VSD
IF=35A,VGS=0V Tch =25°C
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irp
IF=35A, VDD =400V -di/dt=100A/μs RG =150Ω, Tch =25°C See Fig.6 and Fig.7
Thermal Resistance Parameter
Symbol
Channel to Case Channel to Ambient
Rth(ch-c)
-
-
1.14
Rth(ch-a)
-
-
58
2
FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Allowable Power Dissipation PD=f(Tc)
120
Safe Operating Area ID=f(VDS): Duty=0(Single pulse), Tc=25°C t= 1μs
100
110 100
10μs
90
10
80 70
ID [A]
PD [W]
60 50
100μs
1
40 30
Power loss waveform : Square waveform
0.1
20
PD
10
t
0 0
25
50
75
100
125
1ms
0.01
150
0.1
1
10 VDS [V]
Tc [°C]
Typical Output Characteristics ID=f(VDS): 80μs pulse test, Tch=25°C
110 100
10V
90 80
7V 40
7.5V
50
30
VGS=5.5V 10
VGS=6V
10
0
0 0
5
10
VDS [V]
15
20
0
25
Typical Drain-Source on-state Resistance RDS(on)=f(ID): 80μs pulse test, Tch=25°C
0.40
6V
6.5V
7V
8V
5
10
VDS [V]
15
20
25
Typical Drain-Source on-state Resistance RDS(on)=f(ID): 80μs pulse test, Tch=150°C
0.8
7.5V
0.35
5.5V
6V
6.5V
0.7
0.30
7V
0.6
0.25
7.5V
0.5
10V
8V RDS(on) [Ω]
RDS(on) [Ω]
6V
20
6.5V
20
6.5V 30
7V
40
20V
7.5V
50
ID [A]
ID [A]
60
10V
8V
60
8V
70
1000
Typical Output Characteristics ID=f(VDS): 80μs pulse test, Tch=150°C
70
20V
100
0.20 0.15
10V
0.4 0.3
VGS=20V
VGS=20V 0.10
0.2
0.05
0.1
0.00
0.0 0
10
20
30
40
50
60
70
80
90
100 110
ID [A]
0
10
20
30
40 ID [A]
3
50
60
70
FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Drain-Source On-state Resistance RDS(on)=f(Tch): ID=17.5A, VGS=10V
0.3
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch): VDS=VGS, ID=1.3mA
6
5 typ.
4 VGS(th) [V]
RDS(on) [Ω]
0.2
max.
0.1
3
2
typ.
1
0.0
0 -50
-25
0
25
50 Tch [°C]
75
100
125
150
-50
0
25
50 75 Tch [°C]
100
125
150
Typical Transconductance gfs=f(ID): 80μs pulse test, VDS=25V
Typical Transfer Characteristic ID=f(VGS): 80μs pulse test, VDS=25V
100
-25
100
Tch=25℃ 10
150℃
Tch=25℃
150℃
gfs [S]
ID[A]
10
1
1
0.1
0.1 0
1
2
3
4
5 VGS[V]
6
7
8
9
0.1
10
1
10
100
ID [A]
Typical Forward Characteristics of Reverse Diode IF=f(VSD): 80μs pulse test
Typical Capacitance C=f(VDS): VGS=0V, f=250kHz
100000
100 10000 Ciss
10 IF [A]
150℃
C [pF]
1000
Tch=25℃
Coss
100
1 Crss
10
1
0.1 0.0
0.5
1.0
1.5
0.1
2.0
VSD [V]
1
10 VDS [V]
4
100
FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Typical Coss stored energy 25
10000
Typical Switching Characteristics vs. ID Tch=25°C t=f(ID): Vdd=400V, VGS=10V/0V, RG=18Ω
20 1000 td(on) t [ns]
Eoss [uJ]
15
10
td(off) 100 tr
5
tf 0
10 0
10
100
200
300
400
500
0.1
600
1
10
100
VDS [V]
ID [A]
Typical Gate Charge Characteristics VGS=f(Qg): ID=35A, Tch=25°C
Maximum Avalanche Energy vs. startingTch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6.6A
3000
400V Vdd=480V
8
IAS=2A
2500
120V
2000
EAV [mJ]
VGS [V]
6
4
1500
IAS=4A
1000
2
500
0
0 0
20
40
60
80
0
100
Transient Thermal Impedance Zth(ch-c)=f(t): D=0
101
100
10-1
10-2
10-3 10-6
10-5
10-4
10-3
25
50
75 starting Tch [°C]
Qg [nC]
Zth(ch-c) [℃/W]
IAS=6.6A
10-2
10-1
100
t [sec]
5
100
125
150
FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ +10V
L
VGS
-15V BVDSS
Rg
IAV
VDD
D.U.T
VDS 0
Fig.1 Avalanche Test circuit
ID
Fig.2 Operating waveforms of Avalanche Test VDS
L
Diode
VGS
VDS ×90%
VDS ×90%
VGS ×90%
＋
VDD RG
D.U.T
VDS ×10%
VDS ×10%
VGS ×10%
PG td(on)
Fig.3 Switching Test circuit
tr
td(off)
tf
Fig.4 Operating waveform of Switching Test
VGS,VDS
VDS
VGS QG
10V
QSW QGS
QGD
Qg Fig.5 Operating waveform of Gate charge Test VDS peak
IF D.U.T
L
VDS
trr ＋
VDD RG
Irp×10%
Same as D.U.T
PG
Irp
Fig.6 Reverse recovery Test circuit
trr
Qrr=∫0 ir・dt
Fig.7 Operating waveform of Reverse recovery Test
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FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
Outview: TO-220F(SLS) Package
Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.
Marking
Trademark Country of origin mark. " " (Blank): Japan P : Philippines
YMNNN
35F60S1
Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark Type name
* The font (font type,size) and the trademark-size might be actually different.
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FMV35N60S1FD
FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of January 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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