Transcript
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11
EasyPACK模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有pressfit压接管脚和温度检测NTC EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC 初步数据/PreliminaryData
J
VCES = 600V IC nom = 50A / ICRM = 100A 典型应用 • 空调 • 电机传动 • 伺服驱动器 • UPS系统
TypicalApplications • AirConditioning • MotorDrives • ServoDrives • UPSSystems
电气特性 • 低开关损耗 • 低VCEsat • 沟槽栅IGBT3 • VCEsat带正温度系数
ElectricalFeatures • LowSwitchingLosses • LowVCEsat • TrenchIGBT3 • VCEsatwithpositiveTemperatureCoefficient
机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 紧凑型设计 • PressFIT压接技术 • 集成的安装夹使安装坚固
MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated mounting clamps
ModuleLabelCode BarcodeCode128
DMX-Code
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0
ContentoftheCode
Digit
ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
1-5 6-11 12-19 20-21 22-23
ULapproved(E83335) 1
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流 ContinuousDCcollectorcurrent
TC = 90°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C
IC nom IC
50 70
集电极重复峰值电流 Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
100
A
总功率损耗 Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
205
W
栅极－发射极峰值电压 Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage
min. IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
栅极阈值电压 Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷 Gatecharge
VCE sat
A A
typ.
max.
1,45 1,60 1,70
1,90
V V V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,50
µC
内部栅极电阻 Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容 Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
3,10
nF
反向传输电容 Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,095
nF
集电极-发射极截止电流 Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流 Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,023 0,023 0,23
µs µs µs
tr
0,015 0,018 0,02
µs µs µs
td off
0,20 0,22 0,23
µs µs µs
tf
0,10 0,13 0,14
µs µs µs
开通延迟时间(电感负载) Turn-ondelaytime,inductiveload
IC = 50 A, VCE = 300 V VGE = ±15 V RGon = 8,2 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
上升时间(电感负载) Risetime,inductiveload
IC = 50 A, VCE = 300 V VGE = ±15 V RGon = 8,2 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
关断延迟时间(电感负载) Turn-offdelaytime,inductiveload
IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 8,2 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
下降时间(电感负载) Falltime,inductiveload
IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 8,2 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
开通损耗能量(每脉冲) Turn-onenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 8,2 Ω Tvj = 150°C
Eon
0,46 0,56 0,65
mJ mJ mJ
关断损耗能量(每脉冲） Turn-offenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, du/dt = 4200 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 8,2 Ω Tvj = 150°C
Eoff
1,20 1,50 1,60
mJ mJ mJ
短路数据 SCdata
VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt
ISC
350 250
A A
结－外壳热阻 Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,66
0,73 K/W
外壳－散热器热阻 Thermalresistance,casetoheatsink
每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,80
K/W
在开关状态下温度 Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 2
tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C
150
°C
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流 ContinuousDCforwardcurrent
正向重复峰值电流 Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值 I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM
600
V
IF
50
A
IFRM
100
A
I²t
370 330
特征值/CharacteristicValues
min.
typ.
max.
1,55 1,50 1,45
2,00
A²s A²s
正向电压 Forwardvoltage
IF = 50 A, VGE = 0 V IF = 50 A, VGE = 0 V IF = 50 A, VGE = 0 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
VF
反向恢复峰值电流 Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
IRM
60,0 68,0 72,0
A A A
恢复电荷 Recoveredcharge
IF = 50 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Qr
2,10 3,40 3,95
µC µC µC
反向恢复损耗（每脉冲） Reverserecoveryenergy
IF = 50 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Erec
0,42 0,71 0,83
mJ mJ mJ
V V V
结－外壳热阻 Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,00
1,10 K/W
外壳－散热器热阻 Thermalresistance,casetoheatsink
每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,85
K/W
在开关状态下温度 Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
°C
负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance
TC = 25°C
R100偏差 DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率 Powerdissipation
TC = 25°C
B-值 B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值 B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
t.b.d.
K
B-值 B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
t.b.d.
K
根据应用手册标定 Specificationaccordingtothevalidapplicationnote.
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 3
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
模块/Module 绝缘测试电压 Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘 Internalisolation
基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140)
Al2O3
爬电距离 Creepagedistance
端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal
11,5 6,3
mm
电气间隙 Clearance
端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal
10,0 5,0
mm
相对电痕指数 Comperativetrackingindex
CTI
> 200
VISOL
kV
2,5
min.
typ.
max.
LsCE
25
nH
RCC'+EE'
4,50
mΩ
Tstg
-40
125
°C
Anpresskraft für mech. Bef. pro Feder mountig force per clamp
F
20
-
50
N
重量 Weight
G
24
g
杂散电感,模块 Strayinductancemodule
模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度 Storagetemperature
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin.
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 4
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V
输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C
100
100 Tvj = 25°C Tvj = 125°C Tvj = 150°C
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0,0
0,5
1,0
VGE = 19 V VGE = 17 V VGE = 15 V VGE = 13 V VGE = 11 V VGE = 9 V
90
IC [A]
IC [A]
90
1,5 VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0 VCE [V]
3,5
4,0
4,5
5,0
80
90
100
开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=8.2Ω,RGoff=8.2Ω,VCE=300V
100
3,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C
90
Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C
2,5
80 70
2,0
E [mJ]
IC [A]
60 50
1,5
40 1,0
30 20
0,5
10 0
5
6
7
8 9 VGE [V]
10
11
0,0
12
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 5
0
10
20
30
40
50 60 IC [A]
70
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=50A,VCE=300V
瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t)
6,0
10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C
5,0
ZthJH : IGBT
ZthJH [K/W]
E [mJ]
4,0
3,0
1
2,0
1,0
0,0
i: 1 2 3 4 ri[K/W]: 0,083 0,193 0,586 0,588 τi[s]: 0,0005 0,005 0,05 0,2
0
10
20
30
40 50 RG [Ω]
60
70
80
0,1 0,001
90
反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=8.2Ω,Tvj=150°C
1
10
100 IC, Modul IC, Chip
100
Tvj = 25°C Tvj = 125°C Tvj = 150°C
90
90
80
80
70
70
60
60
IF [A]
IC [A]
0,1 t [s]
正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF)
110
50
50 40
40
30
30
20
20
10
10 0
0,01
0
100
200
300 400 VCE [V]
500
600
0
700
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 6
0,0
0,2
0,4
0,6
0,8
1,0 1,2 VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=8.2Ω,VCE=300V
开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=50A,VCE=300V
1,8
1,2 Erec, Tvj = 125°C Erec, Tvj = 150°C
1,6
Erec, Tvj = 125°C Erec, Tvj = 150°C 1,0
1,4 0,8
1,0
E [mJ]
E [mJ]
1,2
0,8 0,6
0,6
0,4
0,4 0,2 0,2 0,0
0
10
20
30
40
50 60 IF [A]
70
80
90
0,0
100
瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t)
0
10
20
30
40 50 RG [Ω]
60
70
80
90
140
160
负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T)
10
100000 ZthJH : Diode
Rtyp
R[Ω]
ZthJH [K/W]
10000
1
1000
i: 1 2 3 4 ri[K/W]: 0,157 0,337 0,758 0,598 τi[s]: 0,0005 0,005 0,05 0,2
0,1 0,001
0,01
0,1 t [s]
1
100
10
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 7
0
20
40
60
80 100 TC [°C]
120
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 8
技术信息/TechnicalInformation IGBT-模块 IGBT-modules
FS50R06W1E3_B11 初步数据 PreliminaryData
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preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.0 9
