Transcript
FUSB340 USB 3.1 SuperSpeed 10 Gbps Switch Features
Description
10 GHz Typical Bandwidth USB 3.1 SuperSpeed 5 Gbps and 10 Gbps Switch -1.0 dB Typical Insertion Loss at 2.5 GHz Low Active Power of 12 μA Typical
The FUSB340 data switch offers superior performance various high speed data transmission protocols:
Low Shutdown Power of < 1 μA Max. 2 kV HBM ESD Protection
Small Packaging, 18 Lead TMLP Wide VDD Operating Range, 1.5 V-5.0 V
Applications
The FUSB340 is a 2:1 data switch for USB SuperSpeed Gen1 and Gen2, 5 Gbps and 10 Gbps data. It is targeted at the mobile device market and for use in Type-C applications where a reversible cable requires a switch.
Smartphones
USB 3.1 SuperSpeed (Gen 2), 10 Gbps PCI Express, Gen 3 SATA Fibre Channel Display Port 1.3
Tablets Notebooks
Figure 1.
Block Diagram
Ordering Information Part Number
Operating Temperature Range
FUSB340TMX
-40 to 85°C
© 2015 Fairchild Semiconductor Corporation FUSB340 • Rev. 1.7
Package 18-Lead, Quad, Ultra-ultrathin Molded Leadless Package (TMLP), 2.0 mm x 2.8 mm x 0.375 mm
Packing Method Tape and Reel
www.fairchildsemi.com
FUSB340 — USB 3.1 SuperSpeed 10 Gbps Switch
August 2015
Host PC
T Y P E
2:1
C
SuperSpeed Rx&Tx Pairs Set #2
T Y P E
2:1
Processor
Phone
SuperSpeed Rx&Tx Pairs Set #1
Processor
C
Figure 2.
Typical Application
Pin Configuration GND
VDD
SSTX1-
SSTX1+
18
17
16
15
SSTXCOM-
1
14
SSTX2-
SSTXCOM+
2
13
SSTX2+
12
GND
GND
3
GND
SSRXCOM-
4
11
SSRX1-
SSRXCOM+
5
10
SSRX1+
6
7
8
9
S
/OE
SSRX2+
SSRX2-
Figure 3.
Pin Assignment (Top Through View)
Pin Descriptions Pin #
Name
Type
Description
1
SSTXCOM-
SW
SuperSpeed TX- Common
2
SSTXCOM+
SW
SuperSpeed TX+ Common
3
GND
GND
4
SSRXCOM-
SW
SuperSpeed RX- Common
5
SSRXCOM+
SW
SuperSpeed RX+ Common
6
S
Input
Switch Select (0=SW1, 1=SW2)
7
/OE
Input
Output Enable (0=Switches Enabled, 1=Switches Disabled)
8
SSRX2+
SW
SuperSpeed RX2+
Ground (connected to die attach pad)
9
SSRX2-
SW
SuperSpeed RX2-
10
SSRX1+
SW
SuperSpeed RX1+
11
SSRX1-
SW
SuperSpeed RX1-
12
GND
GND
13
SSTX2+
SW
SuperSpeed TX2+
14
SSTX2-
SW
SuperSpeed TX2-
15
SSTX1+
SW
SuperSpeed TX1+
16
SSTX1-
SW
SuperSpeed TX1-
17
VDD
VDD
Device Power
18
GND
GND
Ground
© 2015 Fairchild Semiconductor Corporation FUSB340 • Rev. 1.7
Ground (connected to die attach pad)
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FUSB340 — USB 3.1 SuperSpeed 10 Gbps Switch
Typical Application
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol VDD VCNTRL
Parameter Supply Voltage DC Input Voltage (S, /OE)
(1)
(1,2)
VSW
DC Switch I/O Voltage
IIK
DC Input Diode Current
Isw
DC Switch Current
Max.
Unit
-0.5
6.0
V
-0.5
VDD
V
-0.3
2.1
V
-50
TSTG
Storage Temperature
MSL
Moisture Sensitivity Level (JEDEC J-STD-020A)
-65
Human Body Model, JEDEC: JESD22-A114 ESD
Min.
IEC 61000-2-4, Level 4, for Switch Pins
mA 25
mA
+150
°C
1 All Pins
2
Contact
8
Air
15
Charged Device Model, JESD22-C101
kV
1
Notes: 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. 2. VSW refers to analog data switch paths.
Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol VDD tRAMP(VDD) VCNTRL VSW TA
Parameter Supply Voltage Power Supply Slew Rate Control Input Voltage (S, /OE)
(3)
Switch I/O Voltage (Both SSUSB Switch Paths) Operating Temperature
Min.
Max.
Unit
1.5
5.0
V
100
1000
µs/V
0
5.0
V
0
2.0
V
-40
+85
°C
Note: 3. The control inputs must be held HIGH or LOW; they must not float.
© 2015 Fairchild Semiconductor Corporation FUSB340 • Rev. 1.7
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FUSB340 — USB 3.1SuperSpeed 10 Gbps Switch
Absolute Maximum Ratings
All typical values are at TA=25°C unless otherwise specified.
Symbol
Parameter
Condition
VDD (V)
VIK
Clamp Diode Voltage S, /OE
IIN=-18 mA
1.5
IIK
Clamp Diode Current (Switch Pins)
VIN=-0.3 V
0
VIH
Control Input Voltage High
VIL
Control Input Voltage Low
TA= -40ºC to +85ºC Min.
Typ.
-1.2
Max.
Unit
-0.6
V
18
µA
S, /OE
1.5
1.30
V
S, /OE
3.6
1.4
V
S, /OE
5.0
1.5
V
S, /OE
1.5
0.4
V
S, /OE
3.6
0.4
V
S, /OE
5.0
0.4
V
IIN
Control Input Leakage
VSW= -0.6 to 2.0 V VCNTRL=0 to VDD
5.0
-500
500
nA
IOZ
Off-State Leakage for Open Data Paths
VSW= 0.0 DATA 2.0 V
5.0
-0.5
0.5
µA
ICL
On-State Leakage for Closed (4) Data Paths
VSW= 0.0 DATA 2.0 V
5.0
-0.5
0.5
µA
IOFF
Power-Off Leakage Current (All I/O Ports)
VSW= 0 V or 2.0 V
0
-500
500
nA
RON
Switch On Resistance
VSW= 0 V, ION=-8 mA
1.5
5.4
8.0
∆RON
Difference in RON Between Positive-Negative
VSW= 0 V, ION=-8 mA
1.5
0.1
RONF
Flatness for RON
VSW= 0 DATA 2.0 V, ION=-8 mA
1.5
0.9
ICC
Quiescent Supply Current
V/OE=0, VSEL=0 or VDD, IOUT=0
5.0
12
ICCZ
Quiescent Supply Current (High Impedance)
VSEL=X, V/OE=VDD, IOUT=0
5.0
ICCT
Increase in Quiescent Supply Current per VCNTRL
VSEL or V/OE=1.5 V
5.0
5
30
µA
1
µA
15
µA
Note: 4. For this test, the data switch is closed with the respective switch pin floating.
© 2015 Fairchild Semiconductor Corporation FUSB340 • Rev. 1.7
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FUSB340 — USB 3.1SuperSpeed 10 Gbps Switch
DC and Transient Characteristics
All typical value are for VDD =3.6 V and TA=25°C unless otherwise specified.
Symbol
Parameter
Condition
VDD (V)
TA= -40ºC to +85ºC Min. Typ.
Max.
Unit
tON
Turn-On Time, S to Output
RL=50 Ω, CL=0 pF, VSW=0 V, VSW=0.6 V
1.5 to 5.0 V
350
600
ns
tOFF
Turn-Off Time, S to Output
RL=50 Ω, CL=0 pF, VSW=0 V, VSW=3.3 V
1.5 to 5.0 V
125
300
ns
tZHM,ZL
Enable Time, /OE to Output
RL=50 Ω, CL=0pF, VSW=0.6 V
1.5 to 5.0 V
60
150
µs
tLZM,HZ
Disable Time, /OE to Output
RL=50 Ω, CL=0 pF, VSW=0.6 V
1.5 to 5.0 V
35
240
ns
CL=, CL=0 pF, RL=50 Ω,
1.5 to 5.0 V
0.25
RL=50 Ω, CL=0 pF, VSW1=0.6 V,VSW2= -0.6 V,
1.5 to 5.0 V
(5)
tPD
Propagation Delay
tBBM
Break-Before-Make
DOIRR SDDNEXT
DIL
(5)
VS=0dBm, RL=50 Ω, f=2.5 GHz
(5)
Differential Off Isolation
VS=0dBm, RL=50 Ω, f=5.0 GHz VS=0dBm, R=50 Ω, f=2.5 GHz
Differential Channel (5) Crosstalk Differential Insertion Loss (All Data Paths)
VS=0dBm, R=50 Ω, f=5.0 GHz (5)
VIN=0dBm, f=2.5 GHz, RL=50 Ω, CL=0 pF VIN=0dBm, f=5.0 GHz, RL=50 Ω, CL=0 pF VIN=1 Vpk-pk, RL=50 Ω, CL=0 pF, (Both Data Paths)
BW
Differential (5) -3 dB Bandwidth
tSK(P)
Skew of Opposite Transitions RPU=50 to VDD, CL=0 pF (5) of the Same Output
3.6 V 3.6 V
100
ns 350
-28 -25 -44 -40
ns dB dB
-1.0 3.6 V
dB -1.8
3.6 V
10
GHz
3.6 V
6
ps
VDD=0 V, f=1 MHz
2.7
pF
CIN
Control Pin Input (5) Capacitance
CON
On Capacitance
(5)
VDD=3.3 V, f=2.5 GHz
0.5
pF
COFF
Off Capacitance
(5)
VDD=3.3 V, f=2.5 GHz
0.4
pF
Note: 5. Guaranteed by characterization.
© 2015 Fairchild Semiconductor Corporation FUSB340 • Rev. 1.7
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FUSB340 — USB 3.1SuperSpeed 10 Gbps Switch
AC Electrical Characteristics
FUSB340 — USB 3.1SuperSpeed 10 Gbps Switch
Eye Diagrams All plots below are for VDD=3.6 V and TA=25°C with 0 dBm differential data.
Figure 4.
5 Gbps Eye Diagram with Eye Mask
Figure 5.
10 Gbps Eye Diagram with Eye Mask
The table below pertains to the UMLP Package drawing on the following page.
Product-Specific Dimensions Product
A
B
FUSB340TMX
2.00 mm
2.80 mm
© 2015 Fairchild Semiconductor Corporation FUSB340 • Rev. 1.7
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