Transcript
To our customers,
Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com
April 1st, 2010 Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
Notice 1.
2.
3. 4.
5.
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7.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”:
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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI POWER MOSFET
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FY4AEJ-03
MIN RELI
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P
HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
FY4AEJ-03
OUTLINE DRAWING ➄
➀
➃
6.0 4.4
➇
Dimensions in mm
1.8 MAX.
5.0
➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN
0.4 1.27
➆➇
➂ ➃
➁
● ● ● ●
4V DRIVE VDSS ............................................................................... ±30V rDS (ON) (MAX) ........................................................ 30/80mΩ ID ......................................................................................... ±4A
➀
➄➅
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control, DC-DC converter, Li-ionbattery, notebook p/c, etc
MAXIMUM RATINGS (Tc = 25°C) Symbol
Parameter
VDSS VGSS
Drain-source voltage Gate-source voltage
ID IDM
Drain current Drain current (Pulsed)
IDA IS
Avalanche current (Pulsed) Source current
ISM
Source current (Pulsed)
PD Tch
Maximum power dissipation Channel temperature
Tstg —
Storage temperature Weight
Conditions VGS = 0V VDS = 0V
L = 10µH
Ratings p-ch –30
±20 4
±20 –4
V A
28 4
–28 –4
A A
1.7 6.8
–1.7 –6.8
A A
1.6
Typical value
Unit
n-ch 30
1.6
V
W
–55~+150 –55~+150
°C °C
0.07
g Aug. 1999
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HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C) N-ch Symbol
Parameter
V (BR) DSS IGSS
Drain-source breakdown voltage Gate-source leakage current
ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V
IDSS
Drain-source leakage current
VDS = 30V, VGS = 0V
VGS (th) rDS (ON)
Gate-source threshold voltage ID = 1mA, VDS = 10V Drain-source on-state resistance ID = 4A, VGS = 10V
rDS (ON) y fs
Drain-source on-state resistance ID = 2A, VGS = 4V Forward transfer admittance ID = 4A, VDS = 10V
Ciss Coss
Input capacitance Output capacitance
Crss td (on)
Reverse transfer capacitance Turn-on delay time
tr
Rise time
td (off) tf
Turn-off delay time Fall time
VSD Rth (ch-a)
Source-drain voltage Thermal resistance
trr
Reverse recovery time
Test conditions
Limits
Unit
Min.
Typ.
Max.
30 —
— —
— ±0.1
V µA
—
—
0.1
mA
1.0 —
1.5 23
2.0 30
V mΩ
— —
40 8
55 —
mΩ S
— —
550 220
— —
pF pF
— —
115 12
— —
pF ns
—
20
—
ns
— —
40 40
— —
ns ns
IS = 1.7A, VGS = 0V Channel to ambiet
— —
0.75 —
1.10 78.1
V °C/W
IS = 1.7A, dis/d t = –50A/µs
—
100
—
ns
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
P-ch Symbol
Parameter
Test conditions
Limits Min. –30
Typ. —
Max. —
Unit
V (BR) DSS
Drain-source breakdown voltage ID = 1mA, V GS = 0V
IGSS
Gate-source leakage current
VGS = ±20V, VDS = 0V
—
—
±0.1
µA
IDSS VGS (th)
Drain-source leakage current Gate-source threshold voltage
VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V
— –1.5
— –2.0
–0.1 –2.5
mA V
rDS (ON) rDS (ON)
Drain-source on-state resistance ID = –4A, V GS = –10V Drain-source on-state resistance ID = –2A, V GS = –4V
— —
60 115
80 180
mΩ mΩ
y fs Ciss
Forward transfer admittance Input capacitance
ID = –4A, V DS = –10V
— —
6 680
— —
S pF
Coss Crss
Output capacitance Reverse transfer capacitance
VDS = –10V, VGS = 0V, f = 1MHz
— —
180 90
— —
pF pF
td (on)
Turn-on delay time
—
10
—
ns
tr td (off)
Rise time Turn-off delay time
— —
15 50
— —
ns ns
tf VSD
Fall time Source-drain voltage
IS = –1.7A, VGS = 0V
— —
30 –0.88
— –1.20
ns V
Rth (ch-a) trr
Thermal resistance Reverse recovery time
Channel to ambiet IS = –1.7A, dis/d t = 50A/µs
— —
— 70
78.1 —
°C/W ns
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω
V
Aug. 1999
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MIN RELI
FY4AEJ-03
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HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
PERFORMANCE CURVES (N-ch)
1.6
1.2
0.8
0.4
0
MAXIMUM SAFE OPERATING AREA 5 3 2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE 2.0
0
50
100
150
101
100µs
7 5 3 2
1ms
100
10ms
7 5 3 2
100ms TC = 25°C Single Pulse
10–1 7 5 3
200
tw = 10µs
DC 2 3
5 7 100
2 3
5 7 101
2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
VGS =10V,8V,6V,5V
20
VGS = 10V,8V,6V,5V
10
4V
16 Tc = 25°C Pulse Test
12
8 3V
4
DRAIN CURRENT ID (A)
4V
DRAIN CURRENT ID (A)
5
8
6 3V
4 PD = 1.6W
2
PD = 1.6W
0
0
0.2
0.4
0.6
0.8
0
1.0
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL)
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
Tc = 25°C Pulse Test
0.8
0.6
0.4 ID = 8A
0.2
4A 2A
0
2
4
6
8
GATE-SOURCE VOLTAGE VGS (V)
10
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
0.1
DRAIN-SOURCE VOLTAGE VDS (V)
1.0
0
0
Tc = 25°C Pulse Test
80
60 VGS = 4V
40
20
10V
0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) Aug. 1999
MITSUBISHI POWER MOSFET
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MIN RELI
FY4AEJ-03
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
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HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL) 102
20
16
FORWARD TRANSFER ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
7 5
12 Tc = 25°C VDS = 10V Pulse Test
8
4
3 2
101 7 5
VDS =10V Pulse Test
3
TC = 25°C,75°C,125°C
2
0
2
4
6
8
100 0 10
10
102
7 5
Ciss
3
Coss
2
102 Crss Tch = 25°C VGS = 0V f = 1MHZ
10–1
2 3
5 7 100
2 3
5 7 101
3 tr
2
101
td(on)
7 5
100 10–1
2
Tch = 25°C VGS = 10V VDD = 15V RGEN = RGS = 50Ω 2
3
5 7 100
2
5 7 101
3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL)
8 VDS =
6
15V 20V
4
25V
2
Tch = 25°C ID =4A
4
8
12
16
GATE CHARGE Qg (nC)
20
SOURCE CURRENT IS (A)
GATE-SOURCE VOLTAGE VGS (V)
td(off)
20
0
5 7 102
3
tf
7 5
3 2
10
0
2
SWITCHING CHARACTERISTICS (TYPICAL)
103
2
5 7 101
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
3
3
DRAIN CURRENT ID (A)
2
7 5
2
GATE-SOURCE VOLTAGE VGS (V)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
0
VGS = 0V Pulse Test
16 TC = 125°C
12
75°C 25°C
8
4
0
0
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999
MITSUBISHI POWER MOSFET
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MIN RELI
FY4AEJ-03
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
101
4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
7 5 3 2
100 7 5
VGS = 10V ID = 4A Pulse Test
3 2
10–1
–50
0
50
100
3.2
1.6
0.8
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
1.2
1.0 VGS = 0V ID = 1mA Pulse Test
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V ID = 1mA Pulse Test
2.4
0
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
P
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5
D = 1.0
3 2
0.5
101
0.2
7 5 3 2
100 7 5
0.1 0.05
PDM 0.02 0.01
tw T
Single Pulse
D= tw T
3 2
10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN RELI
FY4AEJ-03
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
P
HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
PERFORMANCE CURVES (P-ch)
DRAIN CURRENT ID (A)
1.6
1.2
0.8
0.4
0
0
50
100
150
tw =
10µs
–101 –7 –5 –3 –2
100µs
–100 –7 –5 –3 –2
10ms
1ms
100ms TC = 25°C Single Pulse
–10–1 –7 –5 –3
DC
–2 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3
200
–5
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
VGS =–10V –8V
–20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA –5 –3 –2
–6V
–16
–5V Tc = 25°C Pulse Test
–12
VGS = –10V,–8V,–6V,–5V
–10
PD = 1.6W
–4V
–8
–4
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE 2.0
PD = 1.6W –4V
–8
–6 Tc = 25°C Pulse Test
–4
–3V –2
–3V
0
0
–0.4
–0.8
–1.2
–1.6
0
–2.0
–0.4
–0.6
–0.8
–1.0
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL)
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200
Tc = 25°C Pulse Test
–1.6
–1.2
–0.8 ID =–8A
–0.4 –4A –2A
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
–0.2
DRAIN-SOURCE VOLTAGE VDS (V)
–2.0
0
0
VGS =–4V
160
120
80
40
Tc = 25°C Pulse Test
–10V
0 –10–1 –2 –3 –5 –7–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 DRAIN CURRENT ID (A) Aug. 1999
MITSUBISHI POWER MOSFET
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MIN RELI
FY4AEJ-03
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
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HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL) 102
–20
–16
–12 Tc = 25°C VDS = –10V Pulse Test
–8
–4
FORWARD TRANSFER ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
7 5 3 2
101 7 5 VDS = –10V Pulse Test
3 2 TC = 25°C 75°C 125°C
0
0
–2
–4
–6
–8
100 0 –10
–10
–5 –7 –102
–2 –3
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
SWITCHING CHARACTERISTICS (TYPICAL) 2
Ciss
7 5 3
Coss
2
Crss
102 7 5
Tch = 25°C VGS = 0V f = 1MHZ
3
SWITCHING TIME (ns)
102
103
CAPACITANCE Ciss, Coss, Crss (pF)
–5 –7 –101
GATE-SOURCE VOLTAGE VGS (V)
2
7 5
td(off) tf
3 2
7 5 Tch = 25°C VGS = –10V VDD = –15V RGEN = RGS = 50Ω
3
100 –10–1
2
tr
td(on)
101
2
–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7–101 –2
–2 –3
–5 –7 –100
–5 –7 –101
–2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –20
–10 VDS = –10V
–8
–20V –25V
–6
–4
–2
0
Tch = 25°C ID = –4A
0
4
8
12
16
20
GATE CHARGE Qg (nC)
24
SOURCE CURRENT IS (A)
GATE-SOURCE VOLTAGE VGS (V)
–2 –3
TC = 125°C
–16
75°C 25°C
–12
–8 VGS = 0V Pulse Test
–4
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN RELI
FY4AEJ-03
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
–4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
7 5 3 2
100 7 5
VGS = –10V ID = –4A Pulse Test
3 2
10–1
–50
0
50
100
–3.2 VDS = –10V ID = –1mA
–2.4
–1.6
–0.8
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
1.2
1.0 VGS = 0V ID = –1mA
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
P
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5
D = 1.0
3 2
0.5
101
0.2
7 5 3 2
100 7 5
0.1 0.05
PDM 0.02 tw
0.01
T
Single Pulse
D= tw T
3 2
10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s)
Aug. 1999
