Transcript
Distributed by:
www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner.
Jameco Part Number 1545221
GSIB2520 thru GSIB2580 Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability
~
• High case dielectric strength of 2500 VRMS
~
~
~
• Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Case Style GSIB-5S
TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications.
PRIMARY CHARACTERISTICS IF(AV)
25 A
VRRM
200 V to 800 V
IFSM
350 A
IR
10 µA
VF
1.0 V
TJ max.
150 °C
MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER
SYMBOL
GSIB2520
GSIB2540
GSIB2560
GSIB2580
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
VDC
200
400
600
800
V
Maximum DC blocking voltage Maximum average forward rectified output current at
TC = 98 °C TA = 25 °C
Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range
(1)
IF(AV)
25 3.5 (2)
A
IFSM
350
A
I2 t
500
A2 s
TJ, TSTG
- 55 to + 150
°C
Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. without heatsink
Document Number: 88646 Revision: 31-Jan-08
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
GSIB2520 thru GSIB2580 Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER
TEST CONDITIONS SYMBOL
GSIB2520
GSIB2540
GSIB2560
GSIB2580
UNIT
Maximum instantaneous forward voltage drop per diode
12.5 A
VF
1.00
V
Maximum DC reverse current at rated DC blocking voltage per diode
TA = 25 °C TA = 125 °C
IR
10 350
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER
SYMBOL
GSIB2520
GSIB2540
Typical thermal resistance
GSIB2560
GSIB2580
22 (2) 1.0 (1)
RθJA RθJC
UNIT °C/W
Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. without heatsink (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example) PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GSIB2560-E3/45
7.0
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 400 Heatsink Mounting, TC
Peak Forward Surge Current (A)
Average Forward Output Current (A)
30
25
20
15
10
5
P.C.B. Mounting, TA
0
350 300 200 150 100 50
1.0 Cycle
0 0
25
50
75
100
125
150
1
100
10
Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
www.vishay.com 2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 88646 Revision: 31-Jan-08
GSIB2520 thru GSIB2580 Vishay General Semiconductor
1000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01 0.6
100
10
1 0.8
1.0
1.2
1
1.4
100
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
1000
Instantaneous Reverse Current (µA)
10
Instantaneous Forward Voltage (V)
TA = 125 °C 100
10
1 TA = 25 °C
1
0.1 0.01
0.1 0
20
40
60
80
100
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2
3.5 ± 0.2 11 ± 0.2
20 ± 0.3 5
+
3.2 ± 0.2
3.6 ± 0.2
30 ± 0.3
2.2 ± 0.2
1 ± 0.1 10 ± 0.2
Document Number: 88646 Revision: 31-Jan-08
7.5 ± 0.2
7.5 ± 0.2
17.5 ± 0.5
4 ± 0.2
2.5 ± 0.2
0.7 ± 0.1 2.7 ± 0.2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 3
Legal Disclaimer Notice Vishay
Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com 1
