Transcript
gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
FEATURES
TYPICAL APPLICATIONS
•
Full E-band coverage
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E-band point-to-point radio
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21 dB conversion gain
•
Active imaging
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25 dB gain control range
•
Automotive radar
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16/26 dBm P1dB/OIP3
•
Fiber over radio
•
Direct conversion or IF up conversion
DESCRIPTION gTSC0023 is a complete highly integrated transmitter for E-band radio applications. The transmitter offers more than 25 dB gain control (from the VGA and MPA) to compensate for temperature dependent gain variations. The transmitter has a ×6 frequency multiplier, IQ mixer, VGA, power amplifier and envelope/power detector integrated on the chip. The differential IQ mixer is highly linear with low conversion loss. The frequency multiplier has low spuriouses and flat output power throughout the entire E-band. The medium power amplifier (MPA) at the output delivers more than 16 dBm (P1dB) output power. The output envelope/power detector can be used for both power and envelope tracking thanks to its wide output bandwidth. The TSC0023B is suitable for wideband high modulation Gbit/s communications.
Figure 1. Block diagram of the transmitter.
For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
ELECTRICAL PERFORMANCE Table 1. Electrical performance TA=25°C
Parameter
Min
RF frequency IF frequency LO input frequency LO input power LO multiplication factor Max conversion gain[1] Gain control range LO to RF suppression[2] Image rejection ratio (IRR) P1dB[3] PSAT[3] OIP3[3] OIP2[2,3] Out of band spuriouses RF return loss LO return loss Power consumption
71 DC 11.8 8 18 25 40 20 14 17 24 40
Typ
10 6 21
Max
Unit
86 12 14.3 12
GHz GHz GHz dBm
23
dB dB dBc dB dBm dBm dBm dBm dBm dB dB mW
45 16 19 26 50
18 21
-40 8 10 1100
10 14 1200
1500
MEASURED PERFORMANCE The chip has been measured on-wafer using CW and 2-tone input test signals. The transmitter uses typical bias settings if not specified differently. Table 2. Test conditions
Parameter
Setting
IF input power IF input frequency Frequency separation Temperature
-13 dBm/tone 1 GHz 10 MHz 25°C
[1]
Gain temperature coefficient is -0.05 dB/°C.
[2]
Apply I+, I-, Q+ and Q- DC offset voltage for LO cancellation.
[3]
At maximum gain. VGA drain current (ID1_VGA+ID2_VGA) = 100 mA.
For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
0
0 LO-port
-5 S22 [dB]
S11 [dB]
-5 -10 -15 -20 10
-10 -15
12 14 freq [GHz]
-20 67
16
71
76 81 Freq [GHz]
86
90
Figure 2. (Left): Input matching of the LO-port. (Right): Output matching of the PA.
30
20 -25C
25 20 15 10 70
25C
15
75C
Gain [dB]
Gain [dB]
-25C
25C
75C
10 5
75 80 85 LSB RF Freq [GHz]
0 70
90
75 80 85 LSB RF Freq [GHz]
90
5
50
4
40
-25C 25C 75C
IRR [dB]
Normalized CL [dB]
Figure 3. (Left): Maximum conversion gain vs frequency (ID1_VGA + ID2_VGA is 100 mA). (Right): Intermediate conversion gain vs frequency (ID1_VGA + ID2_VGA is 15 mA).
3 2
30 20
-25C
1
10
25C 75C
0 0
5 10 IF Freq [GHz]
15
0 70
75 80 85 LSB RF Freq [GHz]
Figure 4. (Left): IF BW measured at a fixed RF frequency of 71 GHz (Right): IRR vs frequency. (ID1_VGA + ID2_VGA is 100 mA). For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
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gTSC0023 B E-band TX MMIC 71-86 GHz
30
30
20
20 Gain [dB]
Gain [dB]
Doc. Rev. A02-16
10 -25C
0
10 -25C
0
25C
25C
75C
-10 1
10 ID1_VGA + ID2_VGA [mA]
75C
-10 1
100
10 ID1_VGA + ID2_VGA [mA]
100
Figure 5. (Left): Gain vs VGA drain current, measured at 73.5 GHz. (Right): 83.5 GHz.
50 LO-RF sup. [dBc]
LO-RF sup. [dBc]
50 45 40 35 30 70
75
80 85 Freq [GHz]
45 40 35 30 70
90
75
80 85 Freq [GHz]
90
60
60
50
50 CI3 [dBc]
CI3 [dBc]
Figure 6. (Left): LO to RF suppression at maximum gain (ID1_VGA + ID2_VGA = 100 mA). (Right): LO to RF supr. at intermediate gain (ID1_VGA + ID2_VGA = 15 mA). IQ DC offset is applied to cancel the LO.
40 IF: -23 dBm/tone
30
IF: -18 dBm/tone IF: -13 dBm/tone
40 IF: -23 dBm/tone
30
IF: -8 dBm/tone
20 -10
-5 0 5 Output Power [dBm/tone]
IF: -18 dBm/tone IF: -13 dBm/tone IF: -8 dBm/tone
10
20 -10
-5 0 5 Output Power [dBm/tone]
10
Figure 7. (Left): Third order intermodulation measured at 73.5 GHz, while varying the gain of the VGA to adjust the output power level. (Right): Measured at carrier frequency 83.5 GHz. For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
gTSC0023 B E-band TX MMIC 71-86 GHz
25
25
20
20
PSAT [dBm]
P1dB [dBm]
Doc. Rev. A02-16
15 -25C
10
25C
15 -25C
10
25C
75C
5 70
75 80 85 LSB RF Freq [GHz]
75C
5 70
90
75 80 85 LSB RF Freq [GHz]
90
30
14
28
12 IIP3 [dBm]
OIP3 [dBm]
Figure 8. (Left): P1dB at max gain vs freq. (Right): PSAT at max gain vs freq. (ID1_VGA + ID2_VGA is 100 mA)
26 24 -25C
22
10 8 -25C
6
25C
25C
75C
20 70
75 80 85 LSB RF Freq [GHz]
75C
4 70
90
75 80 85 LSB RF Freq [GHz]
90
60
60
50
50 IIP2 [dBm]
OIP2 [dBm]
Figure 9. (Left): OIP3 vs frequency at maximum gain (ID1_VGA + ID2_VGA = 100 mA). (Right): IIP3 vs frequency measured at intermediate gain (ID1_VGA + ID2_VGA = 15 mA).
40 30 20 70
40 30
75
80 85 Freq [GHz]
90
20 70
75
80 85 Freq [GHz]
Figure 10. (Left): 2nd order intercept point (OIP2) at maximum gain (ID1_VGA + ID2_VGA is 100 mA). (Right): 2nd order intercept point (IIP2) at intermediate gain (ID1_VGA + ID2_VGA is 15 mA). For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
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gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
RECOMMENDED OPERATING CONDITIONS Bias should first be applied to the gates (VG…) followed by the drains (VD…). The gate voltages must be adjusted within the min/max range indicated in Table 3-Table 7 to obtain the specified drain currents. The drain currents are stated with all input signals off. Table 3. Electrical settings on connector P1
Connector P1 GND RF GND
Pad No. 1 2 3
Interface
I/O Ground Output Ground
Z0 = 50 Ohm, AC coupled
Table 4. Electrical settings on connector P2
Connector P2
VG1_VGA[5] VD1_VGA[5] VG2_VGA[5] VD2_VGA[5] VOUT_DET VREF_DET GND VG_DET VD_DET VD1_PA VG1_PA VG2_PA VD2_PA
[4]
Pad No.
1 2 3 4 5 6 7 8 9 10 11 12 13
Bias settings (V/mA)
I/O
Min
Typ[4]
Max
-1.2 3.2 -1.2 3.2 0
-0.9 3.3 / 7.5 -0.9 3.3 / 7.5
-0.4 3.4 -0.4 3.4 VREF_DET
2.4 -1.1 3.2 2.4 -0.5 -0.6 3.2
-0.9 3.3 / <1 2.5 / 130 -0.3 -0.4 3.3 / 120
-0.7 3.4 2.6 -0.1 -0.2 3.4
Input Input Input Input Output Output Ground Input Input Input Input Input Input
The gain is typically 12 dB when biasing the VGA at 15 mA (intermediate gain setting).
[5]
Connect VG1_VGA together with VG2_VGA after a series 500 Ohm resistor on each gate. Connect VD1_VGA together with VD2_VGA.
For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
Table 5. Electrical settings on connector P3
Connector P3 GND LO GND
Pad No. 1 2 3
Interface
I/O Ground Input Ground
Z0 = 50 Ohm, AC coupled
Table 6. Electrical settings on connector P4
Connector P4
VG_MIX VD_AMP VG_AMP GND VD_X2 VD_X3 VG_X2 VG_X3 NC
Pad No.
1 2 3 4 5 6 7 8 9
Bias settings (V/mA)
I/O
Min
Typ[4]
Max
-1.0 3.2 -0.6
-0.8 3.3 / 45 -0.4
-0.6 3.4 -0.2
3.2 3.2 -0.9 -0.55
3.3 / 10 3.3 / 26 -0.8 -0.45
3.4 3.4 -0.7 -0.35
Input Input Input Ground Input Input Input Input NC
Table 7. Electrical settings on connector P5
Connector P5 GND Q+ QGND I+ IGND
Pad No. 1 2 3 4 5 6 7
Interface Z0 = 100 Ohm differential impedance, DC coupled
Z0 = 100 Ohm differential impedance, DC coupled
For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
I/O Ground Input Input Ground Input Input Ground
gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
ABSOLUTE MAXIMUM RATINGS Table 8. Absolute Maximum Ratings
Parameter Gate-source voltage Drain-source voltage Gate-drain breakdown voltage ID1_VGA, ID1_VGA ID1_PA, ID2_PA ID_AMP, ID_X2 ID_X3 IF in (I+, I-, Q+, Q-) IF in (I+, I-, Q+, Q-) LO input power Operating temperature Storage temperature
-2 to +0.7 V 4.5 V 8V 50 mA 200 mA 80 mA 60 mA +7 dBm/ch. 3 Vpp/ch. +15 dBm -40 to + 85°C -65 to +150°C
For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
gTSC0023 B E-band TX MMIC 71-86 GHz Doc. Rev. A02-16
OUTLINE DRAWING Mechanical drawing with pad locations is also available in dxf-file format on the web. The substrate thickness is 50 µm (GaAs). 3000 2763
100
3 2 1 VD2_PA 13 VG2_PA 12 VG1_PA 11 VD1_PA 10 VD_PD
9
VG_PD
8
GND
7
VREF_DET
6
VOUT_DET
5
VD2_VGA
4
6 I-
VG2_VGA
3
7 GND
VD1_VGA
2
VG1_VGA
1
1 GND 2 Q+ 3 Q4 GND 5 I+
1
2
3
4 1243
5
6
7
8
1
9
2
3
150 2693
Figure 11. Outline drawing of the gTSC0023 MMIC. Dimensions are in um.
For more information, prices or to place orders please contact
[email protected] Data and specification are subject to change without notice © 2016 Gotmic AB Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030 http://www.gotmic.se/
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