Transcript
To our customers,
Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com
April 1st, 2010 Renesas Electronics Corporation
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”:
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HAT2064R Silicon N Channel Power MOS FET Power Switching REJ03G1175-0900 (Previous: ADE-208-930G) Rev.9.00 Sep 07, 2005
Features • • • •
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 5.0 mΩ typ (at VGS = 10 V)
Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 5 6 7 8 D D D D 65 87
1, 2, 3 4 5, 6, 7, 8
4 G 12
34
S S S 1 2 3
Rev.9.00 Sep 07, 2005 page 1 of 6
Source Gate Drain
HAT2064R
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage
Symbol VDSS
Value 30
Unit V
VGSS ID
±20 16
V A
128 16
A A
Gate to source voltage Drain current
Note 1
Drain peak current Body-drain diode reverse drain current
ID (pulse) IDR
Channel dissipation Channel to ambient thermal impedance
Pch Note 2 θ ch-a
2.5 50
W °C/W
Tch Tstg
150 –55 to +150
°C °C
Note 2
Channel temperature Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics (Ta = 25°C) Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS V (BR) GSS
30 ±20
— —
— —
V V
ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0
IGSS IDSS
— —
— —
±10 1
µA µA
VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0
Gate to source cutoff voltage Static drain to source on state resistance
VGS (off) RDS (on)
1.0 —
— 5.0
2.5 6.3
V mΩ
VDS = 10 V, ID = 1 mA Note 3 ID = 8 A, VGS = 10 V
Forward transfer admittance
RDS (on) |yfs|
— 18
7.0 30
10 —
mΩ S
ID = 8 A, VGS = 4.5 V Note 3 ID = 8 A, VDS = 10 V
Input capacitance Output capacitance
Ciss Coss
— —
2200 600
— —
pF pF
Reverse transfer capacitance Total gate charge
Crss Qg
— —
330 40
— —
pF nC
VDS = 10 V VGS = 0 f = 1 MHz
Gate to source charge Gate to drain charge
Qgs Qgd
— —
6 8
— —
nC nC
Turn-on delay time Rise time
td (on) tr
— —
20 35
— —
ns ns
Turn-off delay time Fall time
td (off) tf
— —
60 16
— —
ns ns
Body-drain diode forward voltage Body-drain diode reverse recovery time
VDF trr
— —
0.9 50
1.17 —
V ns
Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current
Note:
3. Pulse test
Rev.9.00 Sep 07, 2005 page 2 of 6
Test Conditions
Note 3
VDD = 10 V VGS = 10 V ID = 16 A VGS = 10 V, ID = 8 A VDD ≈ 10 V RL = 1.25 Ω Rg = 4.7 Ω IF = 16 A, VGS = 0 IF = 16 A, VGS = 0 diF/dt = 50 A/µs
Note 3
HAT2064R
Main Characteristics Maximum Safe Operation Area
Power vs. Temperature Derating 500
3.0
10 µs
100
ID (A)
Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Drain Current
Channel Dissipation
Pch (W)
4.0
2.0
1.0
10
DC
0µ
PW
1m
3
10
s
s
=1 Op 0m era s tio n( PW N 1 Operation in ≤ 1 ote 4 0s this area is ) limited by RDS (on) 0.1
10
Ta = 25°C 1 shot Pulse 0
0
50
100
Ambient Temperature
0.01 0.1
200
150
0.3
1
Drain to Source Voltage
Ta (°C)
30
100
VDS (V)
Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics 50
10 V 4.5 V
VDS = 10 V Pulse Test
Pulse Test
(A)
3.5 V
40
ID
40
30
30
Drain Current
Drain Current
ID
(A)
50
3V 20
10
20 25°C Tc = 75°C 10 –25°C
VGS = 2.5 V 0
0 0
2
4
6
Drain to Source Voltage
8
10
0
0.16
0.12
0.08 ID = 10 A 0.04 5A 2A 0 0
4
8
12
Gate to Source Voltage
Rev.9.00 Sep 07, 2005 page 3 of 6
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test
2
Gate to Source Voltage
VDS (V)
0.20
1
100 Pulse Test 50
20 10
VGS = 4.5 V
5 10 V 2 1 0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance RDS (on) (mΩ)
HAT2064R
20 Pulse Test 16 ID = 2 A, 5 A, 10 A
12
VGS = 4.5 V
8
2 A, 5 A, 10 A
4 10 V 0 –40
0
40
80
Case Temperature
120
Tc
160
100 Tc = –25°C
30 10
75°C
3
25°C
1 0.3
VDS = 10 V Pulse Test
0.1 0.1
0.3
30
100
10000
Capacitance C (pF)
50
20
1
2
5
10
1000 Coss 300 Crss 100
VGS = 0 f = 1 MHz 0
20
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
16
VGS VDD = 25 V 10 V 5V
30 VDS
12
8
20
10
4
VDD = 25 V 10 V 5V
0 20
40
Gate Charge
Rev.9.00 Sep 07, 2005 page 4 of 6
60
80
Qg (nc)
0 100
200
Switching Time t (ns)
40
VGS (V)
Reverse Drain Current IDR (A)
ID = 16 A
0
Ciss
10 0.5
20
50
3000
30
di / dt = 50 A / µs VGS = 0, Ta = 25°C
Gate to Source Voltage
Reverse Recovery Time trr (ns)
10
Typical Capacitance vs. Drain to Source Voltage
100
10 0.1 0.2
VDS (V)
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse Recovery Time
Drain to Source Voltage
1
100
td(off)
50
20
tr
td(on) tf
10 5
VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
HAT2064R Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A)
50 Pulse Test 10 V
40 5V
30
VGS = 0
20
10
0 0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width 10
1
D=1 0.5 0.2
0.1
0.1 θch – f (t) = γ s (t) • θch – f θch – f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
0.05 0.01
0.02 0.01
D=
PDM 0.001 o 1sh
0.0001 10 µ
t pu
lse
PW T
PW T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Waveform
Switching Time Test Circuit
90%
Vout Monitor
Vin Monitor D.U.T. Rg
Vin Vout
Vin 10 V
VDS = 10 V
10%
10%
90% td(on)
Rev.9.00 Sep 07, 2005 page 5 of 6
10%
RL
tr
90% td(off)
tf
HAT2064R
Package Dimensions JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section (Ni/Pd/Au plating)
*3 bp
x M
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
e Reference Symbol
L1
Dimension in Millimeters Min
Nom
Max
D
4.90
5.3
E
3.95
A2 A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1 c
L
c1 0°
y
HE Detail F
5.80
e
8° 6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L L1
0.40
0.60
1.27
1.08
Ordering Information Part Name
Quantity
Shipping Container
HAT2064R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.9.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0
