Transcript
PD - 94292A
HEXFET® POWER MOSFET THRU-HOLE (TO-254AA)
IRF5M3205 55V, N-CHANNEL
Product Summary Part Number
BVDSS
IRF5M3205
55V
RDS(on) 0.015Ω
ID 35A*
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-254AA
Features: n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight
Units 35* 35* 140 125 1.0 ±20 475 35 12.5 2.6 -55 to 150
A W W/°C
V mJ A mJ V/ns o
300 (0.063in./1.6mm from case for 10s) 9.3 (Typical)
C
g
* Current is limited by package For footnotes refer to the last page
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1 08/28/01
IRF5M3205
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter
Min
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
l Ciss C oss C rss
Typ Max Units
Test Conditions
55
—
—
V
VGS = 0V, ID = 250µA
—
0.056
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.015
Ω
2.0 34 — —
— — — —
4.0 — 25 250
V S( )
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 6.8
100 -100 170 32 74 22 80 70 55 —
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
3600 1200 445
— — —
VGS = 10V, ID = 35A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 35A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =10V, ID = 35A VDS = 44V
Ω
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
µA
nA nC
VDD = 28V, ID = 35A, VGS = 10V, RG = 2.5Ω
ns
nH
pF
Measured from drain lead (6mm / 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton
Min Typ Max Units
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
— — — — —
— — — — —
35* 140 1.3 130 410
Test Conditions
A V ns nC
Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance Parameter RthJC
Junction-to-Case
Min Typ Max Units —
—
1.0
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF5M3205
1000
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
4.5V 10
20µs PULSE WIDTH T = 25 C 1
4.5V 10
10
100
TJ = 25 ° C
100
TJ = 150 ° C
15 V DS = 25V 20µs PULSE WIDTH
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.0
7.0
10
100
Fig 2. Typical Output Characteristics
1000
6.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
°
J
1 0.1
VDS , Drain-to-Source Voltage (V)
10 4.0
20µs PULSE WIDTH T = 150 C
°
J
1 0.1
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
TOP
ID = 35A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF5M3205
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
C, Capacitance (pF)
6000
4500
Ciss
3000
C oss
1500
Crss
20
VGS , Gate-to-Source Voltage (V)
7500
ID = 35A
16
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
0
0 1
10
0
100
50
100
150
200
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
VDS = 44V VDS = 27V VDS = 11V
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
T J = 150°C 10 T J = 25°C 1
100µs
10ms
Tc = 25°C Tj = 150°C Single Pulse
VGS = 0V 1
0.1 0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1ms
10
2.5
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5M3205
80
RD
V DS
LIMITED BY PACKAGE
I D , Drain Current (A)
VGS
D.U.T.
RG
60
+
-V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90% 0 25
50
75
100
125
150
TC , Case Temperature ( ° C) 10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
PDM
0.10
0.1
t1
0.05 0.02 0.01
0.01 0.00001
t2
SINGLE PULSE (THERMAL RESPONSE)
0.0001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5M3205
1 5V
D .U .T.
RG
+ V - DD
IA S
VGS 20V tp
ID 15.7A 22A BOTTOM 35A TOP
1000
D R IV E R
L
VD S
EAS , Single Pulse Avalanche Energy (mJ)
1200
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S
800
600
400
200
0 25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ .2µF
12V
.3µF
QG
10V
D.U.T.
QGS
+ V - DS
QGD VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5M3205
Footnotes: Repetitive Rating; Pulse width limited by
ISD ≤ 35A, di/dt ≤ 230 A/µs,
maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.8 mH Peak IAS = 35A, VGS =10V, RG= 25Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA 0.12 [.005]
3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A -
2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 )
17 .4 0 ( .6 8 5 ) 16 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1.2 3 5 ) 3 0 .3 9 ( 1.1 9 9 )
6 .6 0 ( .2 6 0 ) 6 .3 2 ( .2 4 9 )
1
2
1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 )
3 -C -
-B -
A
1 .2 7 ( .0 5 0 ) 1 .0 2 ( .0 4 0 )
22.73 [.895] 21.21 [.835]
3X
13.84 [.545] 13.59 [.535]
LEGEND
1
1 - C O LL 2 - E M IT 3 - G A TE
3.81 [.150]
1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) .50 ( .0 2 0 ) .25 ( .0 1 0 )
20.32 [.800] 20.07 [.790]
17.40 [.685] 16.89 [.665]
4.82 [.190] 3.81 [.150]
3 .8 1 ( .1 5 0 ) 2X
6.60 [.260] 6.32 [.249]
13.84 [.545] 13.59 [.535]
3.78 [.149] 3.53 [.139]
.1 2 ( .0 0 5 ) 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 )
3 .8 1 ( .1 5 0 )
2X
2
1.27 [.050] 1.02 [.040]
B R 1.52 [.060]
3
4.06 [.160] 3.56 [.140] 3X
1.14 [.045] 0.89 [.035] 0.36 [.014]
B
A
M C A M B M C
LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01
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